US 10,141,925 B1Granted

Circuits and methods for strengthening load transient response compensation

AssigneeWistron Corporation

InventorsChengwei Huang, Sin-Fang Wang, Yen-Hsiang Wang, Jiun-Lin Tseng, Po-Yen Huang

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Abstract

A circuit for strengthening load transient response compensation is provided, including a comparator, a first MOSFET and a second MOSFET. The comparator compares a system voltage of an electronic device with a reference voltage. The first MOSFET is coupled to the comparator and a first power supply. The second MOSFET is coupled to the comparator and a second power supply of the electronic device. When an external device is connected to the electronic device such that the system voltage is lower than the reference voltage, the comparator outputs a low-level signal and the first MOSFET becomes conductive, so that the external device is powered by the first power supply.

Claims6

Dependent claims

A circuit for strengthening load transient response compensation, comprising:

a comparator, comparing a system voltage of an electronic device with a reference voltage;
a first MOSFET, coupled to the comparator and a first power supply;
a second MOSFET, coupled to the comparator and a second power supply of the electronic device;
wherein when an external device is connected to the electronic device such that the system voltage is lower than the reference voltage, the comparator outputs a low-level signal and the first MOSFET becomes conductive, so that the external device is powered by the first power supply;
wherein when the system voltage is higher than the reference voltage, the comparator outputs a high-level signal and the second MOSFET becomes conductive, so that the external device is powered by the second power supply;
and
wherein the first power supply is a supercapacitor, and when the second MOSFET becomes conductive, the second power supply charges the supercapacitor at the same time.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/868,493Filed 11 Jan 2018
Priority: TW 106137096 A27 Oct 2017
Granted: 27 Nov 2018
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H03K 17/668
The output circuit comprising more than one controlled bipolar transistor: in a symmetrical configuration
H03K 17/102
Modifications for increasing the maximum permissible switched voltage: in field-effect transistor switches
H03K 17/145
Modifications for compensating variations of physical values, e.g. of temperature: in field-effect transistor switches
H03K 17/162
In field-effect transistor switches: without feedback from the output circuit to the control circuit