Semiconductor device having conductive wire with increased attachment angle and method

A semiconductor device comprising:

• a substrate;
• a semiconductor die mounted to the substrate;
• a shielding wire spaced apart from the semiconductor die and formed across the semiconductor die;
• and
• an auxiliary structure supporting the shielding wire under the shielding wire, wherein:
• the shielding wire comprises opposing ends attached to the substrate;
• the auxiliary structure physically contacts the shielding wire at a location other than either of the opposing ends, wherein:
• the shielding wire comprises:
• a first shielding wire formed across the semiconductor die from one side to the other side of the semiconductor die;
• and
• a second shielding wire formed to be perpendicular to the first shielding wire and formed across the semiconductor die;
• the auxiliary structure comprises:
• a first auxiliary wire coupled at opposing ends to a first part the substrate;
• and
• a second auxiliary wire coupled at opposing ends to a second part of the substrate;
• the first shielding wire physically contacts the first auxiliary wire;
• and
• the second shield wire physically contacts the second auxiliary wire, wherein at least one of the first auxiliary wire and the second auxiliary wire has a shape of an arch such that a portion of the arch is detached from the substrate.

A semiconductor device comprising:

• a substrate;
• a semiconductor component mounted to the substrate;
• a shielding wire spaced apart from the semiconductor component and formed across the semiconductor component;
• and
• an auxiliary structure supporting the shielding wire under the shielding wire, wherein the auxiliary structure includes an auxiliary wire comprising:
• a bump structure portion;
• and
• a wire portion having a first end connected to the bump structure portion, wherein the shielding wire physically contacts both the bump structure portion and the wire portion.