Substrate processing method for drying a substrate by discharging gas to liquid layer on the substrate while rotating the substrate

A substrate processing method for a substrate that has been subjected to exposure processing comprising the steps of:

• holding the substrate horizontally;
• a photosensitive film is formed on the substrate;
• supplying a development liquid onto the substrate which is being held;
• supplying a rinse liquid onto the substrate to wash away the development liquid;
• rotating the substrate at a first rotational speed after the development liquid is washed away;
• forming a liquid layer of the rinse liquid on the photosensitive film so as to cover an entire upper surface of the photosensitive film on the substrate while the substrate is being rotated at said first rotational speed;
• and
• discharging only an inert gas toward a center of the liquid layer of the rinse liquid on the substrate, wherein discharging the inert gas includes the steps of:
• stopping the supply of the rinse liquid and subsequently increasing the rotational speed of the substrate from said first rotational speed to a fourth rotational speed after the liquid layer of the rinse liquid is formed on the substrate,
• maintaining the rotational speed of the substrate constant at said fourth rotational speed for a predetermined maintaining time period;
• said predetermined time period lasting from when the rotational speed of the substrate reaches said fourth rotational speed and a thickness of the center of the liquid layer of the rinse liquid is equal to or larger than a thickness of a peripheral portion of the liquid layer of the rinse liquid to when the thickness of the center of the liquid layer of the rinse liquid is smaller than the thickness of the peripheral portion of the liquid layer of the rinse liquid due to a centrifugal force while the entire upper surface of the substrate is kept covered with the liquid layer of the rinse liquid due to tension exerted on the liquid layer of the rinse liquid, the fourth rotational speed is 10 to 100 rpm,
• subsequently starting increasing the rotational speed of the substrate from said fourth rotational speed to a second rotational speed that is higher than said fourth rotational speed when the predetermined maintaining time period terminates, and
• starting discharging only the inert the gas toward the center of the liquid layer of the rinse liquid on the substrate after the state of the liquid layer of the rinse liquid changes from the state where the thickness of the center of the liquid layer of the rinse liquid is equal to or larger than the thickness of the peripheral portion of the liquid layer of the rinse liquid to the state where the thickness of the center of the liquid layer of the rinse liquid is smaller than the peripheral portion of the liquid layer of the rinse liquid and before the substrate reaches said second rotational speed, discharge of only the inert gas occurring with the substrate being rotated at a third rotational speed that is not lower than said fourth rotational speed and lower than said second rotational speed, thereby forming an opening at the center of the liquid layer of the rinse liquid on the substrate and causing the liquid layer of the rinse liquid to integrally move outward from a center of the substrate, with an annular shape of the liquid layer of the rinse liquid held by surface tension inhibiting a plurality of separate droplets of the rinse liquid from being formed on the substrate.