Semiconductor device burn-in temperature sensing

An adapter circuit for use in a burn-in system for translating a temperature sense routine of a temperature sense circuit for application to a diode that is integral to a semiconductor device under test that is connected to an input/output (I/O) package pin that is integral to the semiconductor device, the adapter circuit being external to the semiconductor device and comprising:

• a current measurement block configured to measure temperature sense currents (Is) output from the temperature sense circuit;
• a forced current block configured to drive mirrored sense currents (Ims), which mirror the temperature sense currents, through the diode;
• a voltage measurement block configured to measure voltage differences across the diode during the driving of the mirrored sense currents through the diode;
• and
• a force voltage block configured to present the measured voltage differences to the temperature sense circuit.

A method of sensing a temperature of a diode that is integral to a semiconductor device during burn-in testing comprising:

• powering the semiconductor device and performing functional tests of core logic of the semiconductor device through I/O pins, which are integral to the semiconductor device;
• generating temperature sense currents (Is) using a temperature sense circuit that is external to the semiconductor device;
• driving mirrored sense currents (Ims), which mirror the temperature sense currents (Is), through the diode;
• measuring voltage differences across the diode during driving the mirrored sense currents through the diode;
• presenting the voltage differences to the temperature sense circuit;
• and
• generating an output signal that is indicative of a temperature of the diode using the temperature sense circuit based on the presented voltage differences.