# US 10,122,322 B2 · Dynamic error vector magnitude correction for radio-frequency amplifiers > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,122,322 B2 - Document ID: US10122322B2 - Status: Granted - Kind: B2 - Application number: 15/387,608 - Filed: 2016-12-21 - Published: 2017-06-29 - Granted: 2018-11-06 - Earliest claimed: 2015-12-24 - Assignees: Skyworks Solutions, Inc. - Applicants: Skyworks Solutions, Inc. - Inventors: Lui Lam; Zhiguo Lai; Andrew Raymond Chen - Web page: https://patentgrep.com/patent/US10122322B2 ## CPC - H03F 1/0222: {by using a signal derived from the input signal} - H03F 1/12: by use of attenuating means {(attenuators H03G)} - H03F 1/301: {in MOSFET amplifiers (H03F1/303, H03F1/305, H03F1/308 take precedence)} - H03F 1/56: Modifications of input or output impedances, not otherwise provided for - H03F 3/193: with field-effect devices (H03F3/195 takes precedence) - H03F 3/195: in integrated circuits - H03F 3/211: {using a combination of several amplifiers (H03F3/60 takes precedence)} - H03F 3/213: in integrated circuits - H03F 3/68: Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics {(power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602)} - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H03F 2200/387: A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier - H03F 2200/411: the output amplifying stage of an amplifier comprising two power stages - H03F 2200/447: the amplifier being protected to temperature influence - H03F 2200/451: the amplifier being a radio frequency amplifier - H10W 44/226: {for HF amplifiers} - H03F: AMPLIFIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Dynamic error vector magnitude correction for radio-frequency amplifiers. In some embodiments, a radio-frequency amplification system can include an amplifier configured to receive an input signal through an input path and generate an amplified signal, a power adjustment component implemented along the input path and configured to adjust power of the input signal, and a control circuit configured to provide a control signal to the power adjustment component based on an operating condition associated with the amplifier, such that an impact of the operating condition on the amplifier is compensated by the adjusted power of the input signal. ## Claims ### Claim 1 A radio-frequency amplification system comprising: a power amplifier configured to receive an input signal through an input path and generate an amplified wireless local area network signal substantially during a burst window of transmission; a variable attenuator implemented along the input path and configured to adjust power of the input signal, the variable attenuator including a transistor having a variable gain depending on a temperature-dependent bias signal; and a control circuit configured to provide the temperature-dependent bias signal to the transistor based on a temperature associated with the power amplifier, such that an impact of the temperature on the power amplifier is compensated by the adjusted power of the input signal. ### Claim 2 (depends on 1) The radio-frequency amplification system of claim 1 wherein the transistor is a complementary metal-oxide-semiconductor transistor. ### Claim 3 (depends on 1) The radio-frequency amplification system of claim 1 wherein the variable attenuator further includes one or more additional transistors arranged in series with the transistor. ### Claim 4 (depends on 1) The radio-frequency amplification system of claim 1 wherein the variable attenuator further includes a one or more additional transistors such that the transistors are implemented in a pi-configuration, a T-configuration, or a bridge-T-configuration. ### Claim 5 (depends on 1) The radio-frequency amplification system of claim 1 wherein the control circuit is configured to receive a first current representative of the temperature and a reference current, and generate the temperature-dependent bias signal. ### Claim 6 (depends on 5) The radio-frequency amplification system of claim 5 wherein the first current includes a proportional-to-absolute-temperature current, and the reference current includes a band-gap current. ### Claim 7 (depends on 1) The radio-frequency amplification system of claim 1 wherein the variable gain of the transistor includes an increase in gain of the transistor with an increase in temperature. ### Claim 8 (depends on 7) The radio-frequency amplification system of claim 7 wherein the increase in the gain of the transistor compensates for a decrease in gain of the power amplifier with the increase in temperature. ### Claim 9 (depends on 8) The radio-frequency amplification system of claim 8 wherein the compensation of the input signal with a relatively small amplitude provides a desired gain profile at the output of the power amplifier while avoiding large error vector magnitude impact due to the temperature variation. ### Claim 10 (depends on 9) The radio-frequency amplification system of claim 9 wherein the increase in the gain of the transistor is less than approximately 0.5dB over the increase in temperature. ### Claim 11 (depends on 1) The radio-frequency amplification system of claim 1 wherein the burst window of transmission has a duration of several milliseconds. ### Claim 12 A semiconductor die comprising: a semiconductor substrate; and a radio-frequency amplification system implemented on the semiconductor substrate, and including a power amplifier configured to receive an input signal through an input path and generate an amplified wireless local area network signal substantially during a burst window of transmission; a variable attenuator implemented along the input path and configured to adjust power of the input signal, the variable attenuator including a transistor having a variable gain depending on a temperature-dependent bias signal; and a control circuit configured to provide the temperature-dependent bias signal to the transistor based on a temperature associated with the power amplifier, such that an impact of the temperature on the power amplifier is compensated by the adjusted power of the input signal. ### Claim 13 A radio-frequency module comprising: a packaging substrate configured to receive a plurality of components; and a radio-frequency amplification system implemented on the packaging substrate, and including a power amplifier configured to receive an input signal through an input path and generate an amplified wireless local area network signal substantially during a burst window of transmission; a variable attenuator implemented along the input path and configured to adjust power of the input signal, the variable attenuator including a transistor having a variable gain depending on a temperature-dependent bias signal; and a control circuit configured to provide the temperature-dependent bias signal to the transistor based on a temperature associated with the power amplifier, such that an impact of the temperature on the power amplifier is compensated by the adjusted power of the input signal.