# US 10,122,153 B2 · Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same

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- Number: US 10,122,153 B2
- Document ID: US10122153B2
- Status: Granted
- Kind: B2
- Application number: 15/249,614
- Filed: 2016-08-29
- Published: 2018-03-01
- Granted: 2018-11-06
- Earliest claimed: 2016-08-29
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Cheng-Wei Cheng; Effendi Leobandung; Ning Li; Devendra K. Sadana; Kuen-Ting Shiu
- Web page: https://patentgrep.com/patent/US10122153B2

## CPC

- H01S 5/18377: {comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers}
- H01S 5/021: {Silicon based substrates}
- H01S 5/0218: {Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer}
- H01S 5/18361: {Structure of the reflectors, e.g. hybrid mirrors}
- H01S 5/187: using Bragg reflection
- H01S 5/3432: {the whole junction comprising only (AI)GaAs}
- H01S 5/34366: {based on InGa(Al)AS}
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 71/1276: {comprising growth substrates not made of Group III-V materials}
- H10F 77/124: comprising only Group III-V materials, e.g. GaAs
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10H 20/0133: {with a substrate not being Group III-V materials}
- H10H 20/81: Bodies
- H10H 20/8142: {forming resonant cavity structures}
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping}
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H01S 5/0262: {Photo-diodes, e.g. transceiver devices, bidirectional devices (H01S5/0265 takes precedence)}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1−y), where 0.8<y<1, and SizGe(1−z), where 0.2<z<0.4) that are substantially transparent to a wavelength of interest. The structure further includes a strained layer of a Group III-V material over the first DBR and a second DBR over the strained layer. The second DBR contains alternating layers of electrically conductive oxides (e.g., ITO/AZO) that are substantially transparent to the wavelength of interest. Embodiments of VCSELs and photodetectors can be derived from the structure. The strained layer of Group III-V material can be, for example, a thin layer of In0.53Ga0.47As having a thickness in a range of about 2 nm to about 5 nm.

## Claims

### Claim 1

A structure comprising an optoelectronic device, comprising:
a substrate that comprises a Group IV semiconductor material;
a buffer layer disposed on the substrate;
a first distributed Bragg reflector (DBR) disposed on the buffer layer, the first DBR comprised of alternating layers of doped Group IV materials that are substantially transparent to a wavelength of interest;
a strained layer disposed over the first DBR, the strained layer being comprised of a Group III-V material;
a second DBR disposed over the strained layer, the second DBR comprised of alternating layers of electrically conductive oxides that are substantially transparent to the wavelength of interest; and
a passivation layer disposed on the strained layer disposed over the first DBR, the passivation layer being comprised of GaAs.

### Claim 2 (depends on 1)

The structure as in claim 1, where the first DBR is comprised of alternating layers of doped Si and SiGe.

### Claim 3 (depends on 1)

The structure as in claim 1, where the first DBR is comprised of alternating Group IV layers of SiyGe(1−y), where 0.8<y<1, and SizGe(1−z), where 0.2<z<0.4.

### Claim 4 (depends on 1)

The structure as in claim 1, where the first DBR is comprised of alternating layers of p-type doped SiyGe(1−y), where 0.8<y<1, and SizGe(1−z), where 0.2<z<0.4, where each layer has a thickness in a range of about 80 nm to about 150nm and where there about 20 to about 35 pairs of the alternating layers of SiyGe(1−y) and SizGe(1−z).

### Claim 5 (depends on 1)

The structure as in claim 1, where the second DBR is compriSed of alternating layers of Indium Tin Oxide (ITO) and Aluminum doped Zinc Oxide (AZO).

### Claim 6 (depends on 1)

The structure as in claim 1, where the second DBR is comprised of alternating layers of Indium Tin Oxide (ITO) and Aluminum doped Zinc Oxide (AZO), where each layer has a thickness in a range of about 150 nm to about 300 nm and where there about 15 to about 25 pairs of the ITO and AZO layers.

### Claim 7 (depends on 1)

The structure as in claim 1, where the substrate is comprised of Si, and where the buffer layer is comprised of SiGe.

### Claim 8 (depends on 1)

The structure as in claim 1, where the substrate is comprised of Si, and where the buffer layer is comprised of a relaxed SixGe1−x layer, where 0.5<x<0.7, having a thickness in a range of about 100 nm to about 1000 nm.

### Claim 9 (depends on 1)

The structure as in claim 1, where the strained layer comprised of a Group III-V material has a thickness in a range of about 2 nm to about 5 nm.

### Claim 10 (depends on 1)

The structure as in claim 1, where the strained layer comprised of a Group III-V material is a light emitting layer at the wavelength of interest and has a thickness in a range of about 2 nm to about 5 nm.

### Claim 11 (depends on 1)

The structure as in claim 1, where the strained layer comprised of a Group III-V material is a light absorbing layer at the wavelength of interest and has a thickness in a range of about 2 nm to about 5 nm.

### Claim 12 (depends on 1)

The structure as in claim 1, where the wavelength of interest is in a wavelength range of about 1.3 μm to about 1.65 μm.

### Claim 13 (depends on 1)

The structure as in claim 1, where the wavelength of interest is in a wavelength range of about 1.3 μm to about 1.65 μm, where the strained layer comprised of a Group III-V material is comprised of a strained In0.53Ga0.47 As light emitting layer at the wavelength of interest having a thickness in a range of about 2 nm to about 5 nm.

### Claim 14 (depends on 1)

The structure as in claim 1, where the wavelength of interest is in a wavelength range of about 1.3 μm to about 1.65 μm, where the strained layer comprised of a Group III-V material is comprised of a strained In0.53Ga0.47 As light absorbing layer at the wavelength of interest having a thickness in a range of about 2 nm to about 5 nm.

### Claim 15 (depends on 1)

The structure as in claim 1, where p-contacts are coupled to the first DBR via the buffer layer.

### Claim 16 (depends on 15)

The structure as in claim 15, where the p-contacts are ring-shaped.

### Claim 17 (depends on 1)

The structure as in claim 1, where n-contacts are coupled to the second DBR.

### Claim 18 (depends on 17)

The structure as in claim 17, where the n-contacts are ring-shaped.

### Claim 19 (depends on 1)

The structure as in claim 1, where the strained layer comprised of a Group III-V material is a binary arrangement of Group III-V materials or a quaternary arrangement of Group III-V materials.