# US 10,122,148 B1 · Method and system for providing directional light sources with broad spectrum

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- Number: US 10,122,148 B1
- Document ID: US10122148B1
- Status: Granted
- Kind: B1
- Application number: 15/798,213
- Filed: 2017-10-30
- Granted: 2018-11-06
- Earliest claimed: 2010-05-17
- Assignees: Soraa Laser Diodide, Inc.
- Applicants: Soraa Laser Diode, Inc.
- Inventors: James W. Raring; Mathew C. Schmidt; Yu-Chia Chang
- Web page: https://patentgrep.com/patent/US10122148B1

## CPC

- H01S 5/0427: {for applying modulation to the laser}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H01S 5/0651: {Mode control}
- H01S 5/2031: {characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities}
- H01S 5/22: having a ridge or stripe structure
- H01S 5/34: comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence)
- H01S 5/3407: {characterised by special barrier layers}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H10H 20/042: {Superluminescent diodes}
- H01S 5/06251: {Amplitude modulation}
- H01S 5/0652: {Coherence lowering or collapse, e.g. multimode emission by additional input or modulation}
- H01S 5/32025: {non-polar orientation}
- H01S 5/320275: {semi-polar orientation}
- H01S 5/3414: {by vacancy induced interdiffusion}
- H01S 5/4043: {with vertically stacked active layers}
- H01S 5/405: {Two-dimensional arrays}
- H01S 5/4087: {emitting more than one wavelength}
- H01S 2301/02: ASE (amplified spontaneous emission), noise; Reduction thereof
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

## Claims

### Claim 1

An apparatus comprising:
an optical device comprising:
a gallium and nitrogen containing surface having a first crystalline surface region orientation, the first crystalline surface region orientation being nonpolar or semi-polar;
an active region comprising at least one quantum well and at least one barrier layer;
a first cavity member overlaying the active region, the cavity having a length of at least 100 um, a width of at least 0.5 um, and being configured to emit laser light with a spectral width of at least 0.5 nm;
an RF source electrically coupled to the active region for providing RF modulation, the RF modulation being configured to induce spectral broadening and increase the spectral width to at least 1.5 nm; and
a lens coupled to the optical device.

### Claim 2 (depends on 1)

The apparatus of claim 1 further comprising a second cavity member.

### Claim 3 (depends on 1)

The apparatus of claim 1 wherein the spectral width of the laser after RF modulation is at least 3 nm.

### Claim 4 (depends on 1)

The apparatus of claim 1 wherein the first crystalline surface region orientation comprises a semipolar plane such as {20-21}, {30-31}, {20-2-1}, {30-3-1}, or {11-22}.

### Claim 5 (depends on 1)

The apparatus of claim 1 further comprising a first electrode and a second electrode coupled the first cavity member, the first electrode and the second electrode being insulated from each other, the first electrode being electrically coupled to a driver signal, the second electrode being electrically coupled to the RF source.

### Claim 6 (depends on 1)

The apparatus of claim 1 wherein the laser light is blue or green light.

### Claim 7

A display apparatus comprising:
an optical device comprising:
a gallium and nitrogen containing surface having a first crystalline surface region orientation;
an active region comprising at least one quantum well and at least one barrier layer;
a first cavity member overlaying the active region, the cavity having a length of at least 100 um, a width of at least 0.5 um, and being configured to emit laser light with a spectral width of at least 0.5 nm;
an RF source electrically coupled to the active region for providing RF modulation, the RF modulation being configured to induce spectral broadening and increase the spectral width to at least 1.5 nm; and
a lens coupled to the optical device.

### Claim 8 (depends on 7)

The apparatus of claim 7 further comprising a second cavity member, the first crystalline surface region being either non-polar or semi-polar.

### Claim 9 (depends on 7)

The apparatus of claim 7 wherein the spectral width of a laser after RF modulation is at least 3 nm.

### Claim 10 (depends on 7)

The apparatus of claim 7 wherein the first crystalline surface region orientation comprises a semipolar plane such as {20-21}, {30-31}, {20-2-1}, {30-3-1}, or {11-22}.

### Claim 11 (depends on 7)

The apparatus of claim 7 further comprising a first electrode and a second electrode coupled the first cavity member, the first electrode and the second electrode being insulated from each other, the first electrode being electrically coupled to a driver signal, the second electrode being electrically coupled to the RF source.

### Claim 12 (depends on 7)

The apparatus of claim 7 wherein the laser light is blue or green light.

### Claim 13 (depends on 7)

The apparatus of claim 7 wherein the first crystalline surface region orientation is either non-polar or semi-polar.

### Claim 14 (depends on 7)

The apparatus of claim 7 wherein the active region comprises at least the quantum well or double hetereostructure emitting layer and a barrier layer.

### Claim 15 (depends on 7)

The apparatus of claim 7 wherein the first cavity member is characterized by a length along a c-plane, the first cavity member being configured to emit laser characterized by a spectral width of at least 1 nm.

### Claim 16 (depends on 7)

The apparatus of claim 7 wherein the first cavity member functions as a waveguide for a laser diode.

### Claim 17 (depends on 7)

The apparatus of claim 7 further comprising an optical feedback signal source coupled to the active region for inducing mode hopping.

### Claim 18 (depends on 7)

The apparatus of claim 7 wherein the laser diode is configured to emit a multiple peak wavelength obtained by utilizing light generated in the laser diode or by an adjacent light emitting device to provide optical feedback and induce mode hopping.

### Claim 19

A method for operating an optical device in an apparatus comprising:
providing an apparatus comprising a laser device comprising a gallium and nitrogen containing surface including a first crystalline surface region orientation, an active region comprising at least one quantum well and at least one barrier layer; and a first cavity member overlaying the active region, the cavity having a length of at least 100 um, a width of at least 0.5 um, and being configured to emit laser light with a spectral width of at least 0.5 nm;
inducing spectral broadening using an RF source electrically coupled to the active region for providing RF modulation, the RF modulation being configured to induce the spectral broadening and increase the spectral width to at least 1.5 nm; and
coupling the emitted laser light with a lens.

### Claim 20 (depends on 19)

The method of claim 19 wherein the laser device is configured to emit a multiple peak wavelength obtained by utilizing light generated in the laser diode or by an adjacent light emitting device to provide optical feedback and induce mode hopping.