# US 10,121,981 B2 · Field effect transistor and method for production thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,121,981 B2
- Document ID: US10121981B2
- Status: Granted
- Kind: B2
- Application number: 15/602,945
- Filed: 2017-05-23
- Published: 2018-01-25
- Granted: 2018-11-06
- Earliest claimed: 2016-07-25
- Assignees: Saralon GmbH
- Applicants: Saralon GmbH
- Inventors: Moazzam Ali; Rakesh R Nair
- Web page: https://patentgrep.com/patent/US10121981B2

## CPC

- H10K 10/491: {Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]}
- H10D 30/6728: {Vertical TFTs}
- H10D 30/6741: {Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755)}
- H10D 62/882: {Graphene}
- H10D 64/0114: {to diamond, semiconducting diamond-like carbon or graphene}
- H10D 64/01356: {the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC (H10D64/01364, H10D64/01366 take precedence)}
- H10D 64/01364: {the semiconductor being diamond, semiconducting diamond-like carbon or graphene}
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10K 71/13: using printing techniques, e.g. ink-jet printing or screen printing
- H10K 71/50: Forming devices by joining two substrates together, e.g. lamination techniques
- H10K 71/60: Forming conductive regions or layers, e.g. electrodes
- H10K 71/80: using temporary substrates
- H10P 14/26: using liquid deposition
- H10P 14/3406: {Carbon, e.g. diamond-like carbon}
- H10P 14/46: using a liquid
- H10P 72/74: {using temporarily an auxiliary support}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10K 10/468: {characterised by the gate dielectrics}
- H10K 10/481: {characterised by the gate conductors}
- H10K 10/484: {characterised by the channel regions}
- H10K 10/84: Ohmic electrodes, e.g. source or drain electrodes
- H10K 71/611: {using printing deposition, e.g. ink jet printing}
- H10K 85/111: {comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene}
- H10K 85/1135: {Polyethylene dioxythiophene [PEDOT]; Derivatives thereof}
- H10K 85/221: {Carbon nanotubes}
- H10P 72/7432: {used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A vertical channel field-effect transistor is taught. The vertical channel field-effect transistor comprises a primary substrate and a secondary substrate. A bottom conducting layer is provided on the primary substrate. A top conducting layer is transferred from a secondary substrate to the primary substrate by using an insulating adhesive layer. The thickness of the insulating adhesive layer defines the channel length. The portion of the top conducting layer which is over the bottom conducting layer defines the maximum possible channel. At least one semiconducting layer is provided on and around a perimeter of at least a portion of the channel width. At least one insulating layer is provided on at least a portion of the at least one semiconducting layer. At least one gate conducting layer provided on at least a portion of the at least one insulating layer.

## Claims

### Claim 1

A method of producing a vertical channel field-effect transistor, comprising the steps of:
providing a bottom conducting layer on a primary substrate, the bottom conducting layer comprising at least one first functional group;
providing a transferable conducting layer on a secondary substrate, the transferable conducting layer comprising at least one second functional group;
printing an insulating adhesive layer on at least one of the bottom conducting layer and the transferable conducting layer, the insulating layer comprising at least one third functional group;
laminating the primary substrate and the secondary substrate, wherein at least a portion of the insulating adhesive layer is sandwiched between the bottom conducting layer and the transferrable conducting layer;
activating the insulating adhesive layer, thereby causing some of the at least one third functional group to make chemical bonds with some of the at least one first functional group and with some of the at least one second functional group;
delaminating the secondary substrate from the primary substrate, wherein a top conducting layer is created from the transferrable conducting layer, the horizontal dimension of the top conducting layer is same as the horizontal dimension of the insulating adhesive layer such that a portion of a perimeter of the top conducting layer over the bottom conducting layer defines a channel width of the vertical channel field-effect transistor;
printing at least one semiconducting layer on at least a portion of the channel width;
printing at least one insulating layer on at least a portion of the at least one semiconducting layer; and
printing at least one gate conducting layer on at least a portion of the at least one insulating layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the activation of the insulating adhesive layer is done by at least one of UV radiation, infrared radiation, heat, electron beam or pressure.

### Claim 3 (depends on 1)

The method of claim 1, wherein the bottom conducting layer comprises at least one conjugated polymer and the at least one conjugated polymer is provided on the primary substrate by a printing method.

### Claim 4 (depends on 1)

The method of claim 1, wherein the transferable conducting layer comprises at least one conjugated polymer and the at least one conjugated polymer is provided on the secondary substrate by a printing method.

### Claim 5 (depends on 1)

The method of claim 1, wherein at least one of the bottom conducting layer (620) and the transferable conducting layer is produced by using particles based ink.

### Claim 6 (depends on 1)

The method of claim 1, further comprising the steps of drying and curing at least one of the bottom conducting layer, the transferrable conducting layer, the at least one semiconducting layer, the at least one insulating layer and the at least one gate conducting layer.