# US 10,121,970 B2 · Transistors and methods for making them

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- Number: US 10,121,970 B2
- Document ID: US10121970B2
- Status: Granted
- Kind: B2
- Application number: 15/205,406
- Filed: 2016-07-08
- Published: 2017-01-05
- Granted: 2018-11-06
- Earliest claimed: 2011-05-26
- Assignees: Wuhan Xinqu Chuangrou Optoelectronics Technology Co., Ltd.
- Applicants: Wuhan Xinqu Chuangrou Optoelectronics Technology Co., Ltd.
- Inventors: Beverley Anne Brown; Simon Dominic Ogier; Marco Palumbo; Keri Laura McCall
- Web page: https://patentgrep.com/patent/US10121970B2

## CPC

- H10K 85/111: {comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene}
- C08G 73/026: {Wholly aromatic polyamines}
- C09D 5/24: Electrically-conducting paints {(conductive materials H01B1/00)}
- C09D 179/02: Polyamines
- H01B 1/121: {Charge-transfer complexes}
- H10K 10/462: {Insulated gate field-effect transistors [IGFETs]}
- H10K 10/488: {the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction}
- H10K 85/115: {Polyfluorene; Derivatives thereof}
- H10K 85/151: {Copolymers}
- H10K 85/40: Organosilicon compounds, e.g. TIPS pentacene
- H10K 10/464: {Lateral top-gate IGFETs comprising only a single gate}
- H10K 10/466: {Lateral bottom-gate IGFETs comprising only a single gate}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})

## Abstract

A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 10−7 cm2/Vs and more preferably greater than 10−6 cm2/Vs. Organic thin film transistors in which the source and drain electrodes are bridged by the semiconductor composition have desirable properties of reproducibility and charge mobility. The organic semiconducting composition can be applied by solution coating.

## Claims

### Claim 1

A semiconductor composition comprising:
a soluble polyacene semiconductor;
a polymeric semiconducting binder; and
wherein the polymeric semiconducting binder has a permittivity greater than 3.4 at 1000 Hz.

### Claim 2 (depends on 1)

The semiconductor composition according to claim 1, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10−7 cm2V−1s−1.

### Claim 3 (depends on 2)

The semiconductor composition according to claim 2, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10−6 cm2V−1s−1.

### Claim 4 (depends on 1)

The semiconductor composition according to claim 1, wherein the soluble polyacene semiconductor is represented by at least one of the formula (A2), (A3), and (C):
wherein
each R1, R4, R8 and R11 is independently selected from C1 to C6 hydrocarbyl and hydrocarbyloxy;
each R2, R3, R9 and R10 is independently selected from C1 to C6 hydrocarbyl;
each Rf is independently selected from alkyl;
one of Y1 and Y1 denotes —CH═ or ═CH— and the other denotes —X′—,
one of Y3 and Y4 denotes —CH═ or ═CH— and the other denotes —X′—,
X is —O—, —S—, —Se—, or —NR′″—,
Rs is cyclic, straight chain or branched C1 to C20 alkyl or alkoxy, or is C2 to C30 aryl, all of which are optionally fluorinated or perfluorinated;
Rt is H, F, Cl, Br, I, CN, straight chain or branched C1 to C20 alkyl or alkoxy and optionally being fluorinated or perfluorinated, optionally fluorinated or perfluorinated C6 to C30 aryl, or CO2R″, with R″ being H, optionally fluorinated C1 to C20 alkyl, or optionally fluorinated C2 to C30 aryl;
R′″ is H or cyclic, straight chain or branched C1 to C10 alkyl;
m is 0 or 1; and
n is 0 or 1.

### Claim 5 (depends on 4)

The semiconductor composition according to claim 4, wherein the soluble polyacene semiconductor is represented by the formula (A2).

### Claim 6 (depends on 5)

The semiconductor composition according to claim 5, wherein the soluble polyacene semiconductor is represented by the formula (A2) and wherein R1, R4, R8 and R11 are methyl and Rf are ethyl or are isopropyl.

### Claim 7 (depends on 4)

The semiconductor composition according to claim 4, wherein the soluble polyacene semiconductor is represented by the formula (A3).

### Claim 8 (depends on 7)

The semiconductor composition according to claim 7, wherein the soluble polyacene semiconductor is represented by the formula (A3) and wherein R2, R3, R9, R10 are methyl and Rf are ethyl or are isopropyl.

### Claim 9 (depends on 4)

The semiconductor composition according to claim 4, wherein the soluble polyacene semiconductor is represented by the formula (C).

### Claim 10 (depends on 4)

The semiconductor composition according to claim 4, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10−6 cm2V−1s−1.

### Claim 11 (depends on 1)

The semiconductor composition according to claim 1, wherein the soluble polyacene semiconductor is represented by at least one of the formula B1(a), B1(b), B1(c), B1(d), B2(a), and B2(b):
wherein each X is independently selected from C1 to C20 hydrocarbyl and C1 to C20 alkoxy.

### Claim 12 (depends on 11)

The semiconductor composition according to claim 11, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10−7 cm2V−1s−1.

### Claim 13 (depends on 11)

The semiconductor composition according to claim 11, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10−6 cm2V−1s−1.

### Claim 14 (depends on 4)

The semiconductor composition according to claim 4, wherein the charge mobility of the polymeric semiconducting binder when measured in a pure state is greater than 10−7 cm2V−1s−1.

### Claim 15 (depends on 1)

An organic thin film transistor in which the source and drain electrodes are bridged by a semiconductor composition according to claim 1.

### Claim 16 (depends on 1)

A process of manufacturing organic thin film transistors, the process comprising depositing an organic semiconducting composition according to claim 1 by solution coating.

### Claim 17 (depends on 1)

A solution of a semiconductor composition, the semiconductor composition comprising a soluble polyacene semiconductor, a polymeric semiconducting binder, and wherein the polymeric semiconducting binder has a permittivity greater than 3.4 at 1000 Hz, the solution for use in a process of manufacturing organic thin film transistors, the process comprising depositing an organic semiconducting composition according to claim 1 by solution coating.