# US 10,121,969 B2 · Method for fabricating light-emitting element using chamber with mass spectrometer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,969 B2 - Document ID: US10121969B2 - Status: Granted - Kind: B2 - Application number: 15/174,383 - Filed: 2016-06-06 - Published: 2016-09-29 - Granted: 2018-11-06 - Earliest claimed: 2013-06-28 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki; Satoshi Seo; Tsunenori Suzuki - Web page: https://patentgrep.com/patent/US10121969B2 ## CPC - C23C 14/243: {Crucibles for source material (C23C14/28, C23C14/30 take precedence)} - C23C 14/12: Organic material - C23C 14/548: {Controlling the composition} - H10K 71/164: {using vacuum deposition} - H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour - H10K 71/60: Forming conductive regions or layers, e.g. electrodes - H10K 71/811: {Controlling the atmosphere during processing (H10K71/40 takes precedence)} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A light-emitting element and its fabrication method are provided. The light-emitting element includes an EL layer between a pair of electrode, and the EL layer is formed by evaporation of an organic compound. The evaporation is conducted so that the partial pressure of a component with a specific molecular weight in a film-formation chamber, which is monitored by a mass spectrometer, does not exceed a specific value during the evaporation. This method allows the formation of a light-emitting element having an improved lifetime. ## Claims ### Claim 1 A method for fabricating a semiconductor device, the method comprising the step of: forming a first film by evaporating a first organic compound under a first condition, wherein, in the first condition, each partial pressure of ethanol, hexane, dichloromethane and toluene is in a range from 1.0×10−12 Pa to 5.0×10−8 Pa. ### Claim 2 (depends on 1) The method according to claim 1, further comprising the step of: stopping evaporation of the first organic compound under a second condition, and forming a second film over the first film by evaporating under the first condition after stopping the evaporation, wherein any one of partial pressure of ethanol, hexane, dichloromethane and toluene in the second condition is 1.0×10−9 Pa or more. ### Claim 3 (depends on 1) The method according to claim 1, wherein, in the first condition, each partial pressure of a mass number of 46 or more and 130 or less is in a range from 1.0×10−12 Pa to 5.0×10−8 Pa. ### Claim 4 (depends on 1) The method according to claim 1, wherein, in the first condition, each partial pressure of a mass number of 46 or more and 200 or less is in a range from 1.0×10−12 Pa to 5.0×10−8 Pa. ### Claim 5 (depends on 1) The method according to claim 1, wherein a pressure of the first condition is 1.0×10−4 Pa or less. ### Claim 6 (depends on 1) The method according to claim 1, wherein the first film comprises the first organic compound and a second organic compound. ### Claim 7 (depends on 6) The method according to claim 6, wherein the evaporation is co-evaporation. ### Claim 8 (depends on 1) The method according to claim 1, wherein the first organic compound is a light-emitting substance. ### Claim 9 (depends on 1) The method according to claim 1, wherein the semiconductor device is a light-emitting element. ### Claim 10 A method for fabricating a semiconductor device, the method comprising the step of: forming a film comprising a first organic compound under a first condition, wherein, in the first condition, a ratio of a partial pressure of toluene is less than or equal to 0.1% of a total pressure of the first condition. ### Claim 11 (depends on 10) The method according to claim 10, wherein, in the first condition, each partial pressure of ethanol, hexane and dichloromethane is less than or equal to 0.1% of the total pressure of the first condition. ### Claim 12 (depends on 10) The method according to claim 10, wherein, in the first condition, each partial pressure of a mass number of 46 or more and 130 or less is less than or equal to 0.1% of the total pressure of the first condition. ### Claim 13 (depends on 10) The method according to claim 10, wherein, in the first condition, each partial pressure of a mass number of 46 or more and 200 or less is in a range from 1.0×10−12 Pa to 5.0×10−8 Pa. ### Claim 14 (depends on 10) The method according to claim 10, wherein a pressure of the first condition is 1.0×10−4 Pa or less. ### Claim 15 (depends on 10) The method according to claim 10, wherein the film comprises the first organic compound and a second organic compound. ### Claim 16 (depends on 15) The method according to claim 15, wherein the film is formed by co-evaporation. ### Claim 17 (depends on 10) The method according to claim 10, wherein the first organic compound is a light-emitting substance. ### Claim 18 (depends on 10) The method according to claim 10, wherein the semiconductor device is a light-emitting element.