# US 10,121,967 B2 · CEM switching device

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- Number: US 10,121,967 B2
- Document ID: US10121967B2
- Status: Granted
- Kind: B2
- Application number: 15/363,216
- Filed: 2016-11-29
- Published: 2018-05-31
- Granted: 2018-11-06
- Earliest claimed: 2016-11-29
- Assignees: Arm Limited
- Applicants: ARM Limited
- Inventors: Carlos Alberto Paz de Araujo; Jolanta Bozena Celinska; Kimberly Gay Reid; Lucian Shifren
- Web page: https://patentgrep.com/patent/US10121967B2

## CPC

- H10N 70/8833: {Binary metal oxides, e.g. TaOx}
- C23C 14/0036: {Reactive sputtering}
- C23C 14/165: {by cathodic sputtering}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- H10N 70/011: {Manufacture or treatment of multistable switching devices}
- H10N 70/021: {Formation of switching materials, e.g. deposition of layers}
- H10N 70/20: Multistable switching devices, e.g. memristors
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/841: {Electrodes}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

## Claims

### Claim 1

A method for the manufacture of a CEM switching device, which method comprises forming a conductive substrate, forming a layer of a correlated electron material (CEM) on the conductive substrate and forming a conductive overlay on the CEM layer, wherein the forming the conductive overlay comprises forming a primary layer of a conductive material contacting the CEM layer and forming a secondary layer of a conductive material on or over the primary layer and the forming of the conductive substrate comprises forming a secondary layer of a conductive material on a substrate and forming a primary layer of a conductive material on the secondary layer wherein the thickness of the secondary layer is greater than that of the primary layer and wherein the conductive material of the primary layer is substantially resistant to diffusion or migration of oxygen ion from the CEM layer to the secondary layer.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the conductive material of the primary layer is substantially resistant to diffusion or migration of oxygen ion at temperatures between 20° C. and 1000° C.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the conductive material of the primary layer is substantially resistant to diffusion or migration of oxygen ion at temperatures between 20° C. and 750° C.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the conductive material of the primary layer is substantially resistant to diffusion or migration of oxygen ion at temperatures between 20° C. and 450° C.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the conductive material of the primary layer is resistant to oxidation by the CEM layer.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the CEM layer comprises one or more of a d- or f-block metal oxide.

### Claim 7 (depends on 1)

The A method according to claim 1, wherein the conductive material of the secondary layer is susceptible to oxidation by the CEM layer.

### Claim 8 (depends on 7)

The method according to claim 7, wherein the conductive material of the secondary layer comprises one or more of copper, cobalt, aluminum, nickel, titanium, tantalum, tungsten, titanium nitride, tantalum nitride, tungsten nitride, a silicide, and polysilicon.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the conductive material of the primary layer comprises one or more of a noble metal or a noble metal oxide.

### Claim 10

A switching device comprising a conductive substrate, a conductive overlay and a layer of a correlated electron material (CEM) therebetween wherein the conductive substrate and the conductive overlay each comprises a primary layer of a conductive material and a secondary layer of a conductive material wherein the thickness of the secondary layer is greater than that of the primary layer and wherein the primary layer contacts the CEM layer and is substantially resistant to diffusion or migration of oxygen ion from the CEM layer to the secondary layer.

### Claim 11 (depends on 10)

The switching device according to claim 10, wherein the conductive material of the primary layer comprises one or more of a noble metal or a noble metal oxide.

### Claim 12 (depends on 10)

The switching device according to claim 10, wherein the conductive material of the secondary layer is susceptible to oxidation by the CEM layer.

### Claim 13 (depends on 11)

The switching device according to claim 11, wherein the one or more noble metal is selected from the group consisting of platinum, palladium, rhodium, ruthenium and iridium.

### Claim 14 (depends on 12)

The switching device according to claim 12, wherein the conductive material of the secondary layer comprises one or more of copper, cobalt, aluminum, nickel, titanium, tantalum, tungsten, titanium nitride, tantalum nitride, tungsten nitride, a metal silicide and polysilicon.