# US 10,121,958 B2 · Semiconductor device and method of manufacturing same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,958 B2 - Document ID: US10121958B2 - Status: Granted - Kind: B2 - Application number: 15/060,820 - Filed: 2016-03-04 - Published: 2016-09-29 - Granted: 2018-11-06 - Earliest claimed: 2015-03-24 - Assignees: Renesas Electronics Corporation - Applicants: Renesas Electronics Corporation - Inventors: Takashi Tonegawa; Keiji Sakamoto - Web page: https://patentgrep.com/patent/US10121958B2 ## CPC - H10N 50/80: Constructional details - H10B 61/22: {of the field-effect transistor [FET] type} - H10N 50/01: Manufacture or treatment - H10N 50/10: Magnetoresistive devices - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10B: ELECTRONIC MEMORY DEVICES ## Abstract An object is to prevent a short failure in magnetic tunnel junction and thereby suppress a semiconductor device having a magnetic memory cell from having deteriorated reliability. First, a data reference layer and a cap layer are patterned. After formation of an oxygen-free first insulating film on their side walls, a base layer, a data recording layer, and a tunnel barrier layer are patterned. During patterning of the base layer, data recording layer, and tunnel barrier layer, adhesion of a metal substance of the data reference layer and the cap layer to the side wall of the tunnel barrier layer can be prevented because the data reference layer and the cap layer are covered by the first insulating film. ## Claims ### Claim 1 A semiconductor device, comprising: a data recording layer having magnetization; a tunnel barrier layer formed over the data recording layer; a data reference layer formed over a portion of the tunnel barrier layer and having magnetization; and a cap layer formed over the data reference layer, wherein in plan view, the data recording layer and the tunnel barrier layer overlap with each other while having the same shape and the data reference layer and the cap layer overlap with each other while having the same shape, wherein in plan view, the data reference layer is embraced in the data recording layer, wherein the data reference layer and the cap layer have, in contact with the respective side walls thereof, a first insulating film, and wherein the data recording layer and the tunnel barrier layer have, over respective side walls thereof, no first insulating film. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the first insulating film is an oxygen-free insulating film. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the first insulating film is a silicon nitride film or a silicon carbonitride film. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the data recording layer and the tunnel barrier layer have, in contact with the respective side walls thereof, an oxygen-free second insulating film. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the data reference layer has a structure obtained by stacking a first magnetic layer, a non-magnetic layer, and a second magnetic layer one after another. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the data recording layer comprises: a first region; a second region located on a first side of the first region, and a third region located on a second side opposite to the first side with the first region therebetween, and wherein the semiconductor device further comprises: a first magnetic pinned layer formed below the second region; and a second magnetic pinned layer formed below the third region. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, further comprising an electrode layer which lies below the data recording layer and in plan view, overlaps with the data recording layer while having the same shape. ### Claim 8 A method of manufacturing a semiconductor device, comprising the steps of: (a) depositing a data recording layer, a tunnel barrier layer, a data reference layer, and a cap layer successively over a semiconductor substrate; (b) processing the data reference layer and the cap layer by using a first mask; (c) depositing a first insulating film having a first thickness so as to cover the data recording layer, the tunnel barrier layer, the data reference layer, and the cap layer; (d) depositing, over the first insulating film, a second insulating film having a second thickness greater than the first thickness; and (e) processing the data recording layer, the tunnel barrier layer, the first insulating film, and the second insulating film by using a second mask, wherein in the step (b), the data reference layer and the cap layer are processed so as to overlap with each other while having the same shape in plan view, wherein in the step (e), the data reference layer and the cap layer have respective side walls covered with the first insulating film, and wherein the data recording layer and the tunnel barrier layer are processed so that in plan view, the data recording layer and the tunnel barrier layer overlap with each other, while having the same shape, and the data recording layer embraces the data reference layer. ### Claim 9 (depends on 8) The method of manufacturing a semiconductor device according to claim 8, wherein the first insulating film is an oxygen-free insulating film. ### Claim 10 (depends on 8) The method of manufacturing a semiconductor device according to claim 8, wherein the first insulating film is a silicon nitride film or a silicon carbonitride film. ### Claim 11 (depends on 8) The method of manufacturing a semiconductor device according to claim 8, comprising, after the step (e), the step of: (f) forming an oxygen-free third insulating film so as to cover the data recording layer, the tunnel barrier layer, the data reference layer, the cap layer, the first insulating film, and the second insulating film. ### Claim 12 A method of manufacturing a semiconductor device, comprising the steps of: (a) successively depositing a data recording layer, a tunnel barrier layer, a data reference layer, and a cap layer over a semiconductor substrate; (b) processing the data reference layer and the cap layer by using a mask; (c) depositing a first insulating film having a first thickness so as to cover the data recording layer, the tunnel barrier layer, the data reference layer, and the cap layer; (d) depositing, over the first insulating film, a second insulating film having a second thickness greater than the first thickness; and (e) processing the data recording layer, the tunnel barrier layer, the first insulating film, and the second insulating film by anisotropic etching, wherein in the step (b), the data reference layer and the cap layer are processed so as to overlap with each other while having the same shape in plan view, wherein in the step (e), the data reference layer and the cap layer have respective side walls covered with the first insulating film, and wherein the data recording layer and the tunnel barrier layer are processed so that in plan view, the data recording layer and the tunnel barrier layer overlap with each other, while having the same shape, and the data recording layer embraces the data reference layer. ### Claim 13 (depends on 12) The method of manufacturing a semiconductor device according to claim 12, wherein the first insulating film is an oxygen-free insulating film. ### Claim 14 (depends on 12) The method of manufacturing a semiconductor device according to claim 12, wherein the first insulating film is a silicon nitride film or a silicon carbonitride film. ### Claim 15 (depends on 12) The method of manufacturing a semiconductor device according to claim 12, comprising, after the step (e), the step of: (f) forming an oxygen-free third insulating film so as to cover the data recoding layer, the tunnel barrier layer, the data reference layer, the cap layer, the first insulating film, and the second insulating film.