# US 10,121,945 B2 · Semiconductor light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,945 B2 - Document ID: US10121945B2 - Status: Granted - Kind: B2 - Application number: 15/708,794 - Filed: 2017-09-19 - Published: 2018-06-21 - Granted: 2018-11-06 - Earliest claimed: 2016-12-16 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Jung Sung Kim; Chang Su Park; Jung Kyu Park; Tae Young Choi - Web page: https://patentgrep.com/patent/US10121945B2 ## CPC - H10H 20/856: Reflecting means - H10H 20/8506: {Containers} - H10H 20/8513: {having two or more wavelength conversion materials} - H10H 20/8514: {characterised by their shape, e.g. plate or foil} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 20/0361: {of wavelength conversion means} - H10H 20/0362: {of encapsulations} - H10H 20/853: characterised by their shape - H10H 20/882: {Scattering means (H10H20/82 takes precedence)} - H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor light emitting device includes: a package body having a cavity, and having a first wiring electrode and a second wiring electrode disposed on a bottom surface of the cavity; a light emitting diode (LED) chip having a first surface with a first electrode and a second electrode thereon, a second surface, and lateral surfaces, the LED chip being mounted in the cavity such that the first surface faces the bottom surface, a wavelength conversion film on the second surface of the LED chip, and including a first wavelength conversion material, and a reflective resin portion in the cavity that surrounds the LED chip. ## Claims ### Claim 1 A semiconductor light emitting device, comprising: a package body having a cavity surrounded by a side wall, and a first wiring electrode, and a second wiring electrode on a bottom surface of the cavity; a light emitting diode (LED) chip having a first surface with a first electrode and a second electrode thereon, a second surface opposing the first surface, and lateral surfaces between the first surface and the second surface, the LED chip being mounted in the cavity such that the first surface faces the bottom surface; conductive bumps connecting the first electrode and the second electrode to the first wiring electrode and the second wiring electrode, respectively; a wavelength conversion film on the second surface of the LED chip, and including a first wavelength conversion material; a light-transmitting bonding layer between the second surface of the LED chip and the wavelength conversion film to bond the LED chip to the wavelength conversion film; a reflective resin portion in the cavity to surround the LED chip and fill a space between the first surface of the LED chip and the bottom surface of the cavity; and a wavelength conversion resin layer on the wavelength conversion film and the reflective resin portion, and having a light-transmitting resin, the light-transmitting resin including a second wavelength conversion material. ### Claim 2 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein an upper surface of the reflective resin portion has a curved inclined surface. ### Claim 3 (depends on 2) The semiconductor light emitting device as claimed in claim 2, wherein the upper surface of the reflective resin portion contacting the side wall is higher than the upper surface of the reflective resin portion adjacent to the LED chip. ### Claim 4 (depends on 2) The semiconductor light emitting device as claimed in claim 2, wherein the side wall of the package body has an inclined reflective surface. ### Claim 5 (depends on 4) The semiconductor light emitting device as claimed in claim 4, wherein the curved inclined surface of the reflective resin portion is connected to the inclined reflective surface. ### Claim 6 (depends on 4) The semiconductor light emitting device as claimed in claim 4, wherein the wavelength conversion resin layer extends to the inclined reflective surface of the side wall. ### Claim 7 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the first wavelength conversion material and the second wavelength conversion material convert light, emitted by the LED chip, into light having different wavelengths. ### Claim 8 (depends on 7) The semiconductor light emitting device as claimed in claim 7, wherein the first wavelength conversion material includes a red phosphor, and the second wavelength conversion material includes at least one of a green phosphor and a yellow phosphor. ### Claim 9 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the light-transmitting bonding layer includes a laterally extending region, the laterally extending region extending to the lateral surfaces of the LED chip and having an inclined surface that is inclined toward the bottom surface, and the reflective resin portion is formed along the inclined surface of the laterally extending region. ### Claim 10 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the light-transmitting bonding layer includes a light-dispersing powder. ### Claim 11 (depends on 1) The semiconductor light emitting device as claimed in claim 1, wherein the first wavelength conversion material is contained in an amount of 5 vol % to 30 vol %, based on total volume of the wavelength conversion film. ### Claim 12 (depends on 1) The semiconductor light emitting device as claimed in claim 1, further comprising a Zener diode disposed on the bottom surface of the cavity and surrounded by the reflective resin portion, wherein the bottom surface of the cavity is a flat surface. ### Claim 13 A semiconductor light emitting device, comprising: a package body having a cavity surrounded by a side wall having a first reflective surface, the first reflective surface being inclined, the package body having a first wiring electrode and a second wiring electrode disposed on a bottom surface of the cavity; a semiconductor light emitting element mounted on the bottom surface of the cavity, and having a first electrode and a second electrode connected to the first wiring electrode and the second wiring electrode, respectively; a reflective resin portion in the cavity to surround the semiconductor light emitting element, having a curved upper surface providing a second reflective surface connected to the first reflective surface, and filling a space between the semiconductor light emitting element and the bottom surface of the cavity; and a wavelength conversion resin layer on the semiconductor light emitting element, wherein the semiconductor light emitting element further includes: an LED chip having a first surface with a first electrode and a second electrode disposed thereon, the first surface facing the bottom surface of the cavity, a second surface opposing the first surface, and lateral surfaces between the first surface and the second surface; a wavelength conversion film disposed on the second surface of the LED chip, and below the wavelength conversion resin layer; and a light-transmitting bonding layer disposed between the second surface of the LED chip and the wavelength conversion film to bond the LED chip to the wavelength conversion film, extending to the lateral surfaces of the LED chip, and having a surface inclined toward the bottom surface, wherein the wavelength conversion resin layer includes a first wavelength conversion material, and the wavelength conversion film includes a second wavelength conversion material. ### Claim 14 (depends on 13) The semiconductor light emitting device as claimed in claim 13, wherein the first wavelength conversion material includes a red phosphor, and the second wavelength conversion material includes at least one of a green phosphor and a yellow phosphor. ### Claim 15 (depends on 13) The semiconductor light emitting device as claimed in claim 13, wherein the wavelength conversion resin layer extends along the second reflective surface of the reflective resin portion and the first reflective surface of the side wall. ### Claim 16 A semiconductor light emitting device, comprising: a package body having a cavity surrounded by a side wall, and having a first wiring electrode and a second wiring electrode on a bottom surface of the cavity; an LED chip having a first surface with a first electrode and a second electrode disposed thereon, a second surface opposing the first surface, and lateral surfaces between the first surface and the second surface, the LED chip being mounted in the cavity such that the first surface faces the bottom surface; conductive bumps connecting the first electrode and the second electrode to the first wiring electrode and the second wiring electrode, respectively; a wavelength conversion film on the second surface of the LED chip, and including a first wavelength conversion material; a light-transmitting bonding layer between the second surface of the LED chip and the wavelength conversion film to bond the LED chip to the wavelength conversion film, and including a light-transmitting bonding material, the light-transmitting bonding material including a second wavelength conversion material; and a reflective resin portion in the cavity to surround the LED chip, and filling a space between the first surface of the LED chip and the bottom surface of the cavity. ### Claim 17 (depends on 16) The semiconductor light emitting device as claimed in claim 16, wherein the first wavelength conversion material includes at least one of a green phosphor and a yellow phosphor, and the second wavelength conversion material includes a red phosphor. ### Claim 18 (depends on 16) The semiconductor light emitting device as claimed in claim 16, wherein the light-transmitting bonding layer includes a laterally extending region extending to the lateral surfaces of the LED chip and having a surface inclined toward the bottom surface, the laterally extending region including the first wavelength conversion material. ### Claim 19 (depends on 16) The semiconductor light emitting device as claimed in claim 16, wherein the side wall of the cavity has a first reflective surface, the first reflective surface being inclined, and the reflective resin portion has a second reflective surface connected to the first reflective surface and curved. ### Claim 20 (depends on 16) The semiconductor light emitting device as claimed in claim 16, further comprising a light-transmitting resin layer on the wavelength conversion film and the reflective resin portion in the cavity.