# US 10,121,940 B1 · Vehicle lamp using semiconductor light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,940 B1 - Document ID: US10121940B1 - Status: Granted - Kind: B1 - Application number: 15/499,049 - Filed: 2017-04-27 - Published: 2018-11-01 - Granted: 2018-11-06 - Earliest claimed: 2017-04-27 - Assignees: LG Electronics Inc. - Applicants: LG Electronics Inc. - Inventors: Eunah Lee - Web page: https://patentgrep.com/patent/US10121940B1 ## CPC - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - B60Q 1/22: for reverse drive - B60Q 1/2607: {comprising at least two indicating lamps} - B60Q 1/2696: {Mounting of devices using LEDs} - B60Q 1/34: for indicating change of drive direction (B60Q1/22 takes precedence) - B60Q 1/44: for indicating braking action {or preparation for braking, e.g. by detection of the foot approaching the brake pedal} - F21S 43/14: Light emitting diodes [LED] - F21S 43/145: Surface emitters, e.g. organic light emitting diodes [OLED] - F21S 43/15: Strips of light sources - F21S 43/19: Attachment of light sources or lamp holders - F21S 43/195: {Details of lamp holders, terminals or connectors} - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/831: characterised by their shape - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/8512: {Wavelength conversion materials} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - B60Q 2400/20: Multi-color single source or LED matrix, e.g. yellow blinker and red brake lamp generated by single lamp - F21Y 2115/10: Light-emitting diodes [LED] - H10W 90/00: Package configurations - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - B60Q: ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL - F21S: NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS - F21Y: INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Disclosed is a semiconductor light emitting device, wherein the semiconductor light emitting device includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode; a second conductive semiconductor layer overlapped with the first conductive semiconductor layer, and having the second conductive electrode; and a passivation layer formed to enclose the semiconductor light emitting device, wherein one surface of the first conductive semiconductor layer is divided into a first region where the first conductive electrode is disposed, and a second region covered by the passivation layer, and wherein the passivation layer is provided with a plurality of layers having different refractive indexes, such that light is reflected from the second region. ## Claims ### Claim 1 A semiconductor light emitting device includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode; a second conductive semiconductor layer overlapped with the first conductive semiconductor layer, and having the second conductive electrode; and a passivation layer formed to enclose the semiconductor light emitting device, wherein one surface of the first conductive semiconductor layer is divided into a first region where the first conductive electrode is disposed, and a second region covered by the passivation layer, wherein the passivation layer is provided with a plurality of layers having different refractive indexes, such that light is reflected from the second region, wherein the passivation layer includes a first part which covers side surfaces of the semiconductor light emitting device, and a second part which covers one surface of the first conductive semiconductor layer, wherein the first part is formed as a single layer, and wherein the second part is formed of the plurality of layers. ### Claim 2 (depends on 1) The semiconductor light emitting device of claim 1, wherein the second part is extended toward the first region so as to cover at least part of the first conductive electrode. ### Claim 3 (depends on 1) The semiconductor light emitting device of claim 1, wherein a through hole is formed at the second part such that the first conductive electrode is exposed to outside therethrough. ### Claim 4 (depends on 1) The semiconductor light emitting device of claim 1, wherein the single layer is extended from side surfaces of the semiconductor light emitting device towards one surface of the semiconductor light emitting device so as to cover the second part. ### Claim 5 (depends on 1) The semiconductor light emitting device of claim 1, wherein a thickness of the single layer is less than a total thickness of the plurality of layers having different refractive indexes. ### Claim 6 (depends on 1) The semiconductor light emitting device of claim 1, wherein a material having a relatively high refractive index and a material having a relatively low refractive index are repeatedly laminated on each other at the plurality of layers. ### Claim 7 (depends on 6) The semiconductor light emitting device of claim 6, wherein the material having the relatively high refractive index includes at least one of SiN, TiO2, Al2O3, and ZrO2, and the material having the relatively low refractive index includes SiO2. ### Claim 8 (depends on 1) The semiconductor light emitting device of claim 1, wherein a layer having a relatively low refractive index between the plurality of layers comes in direct contact with the first region. ### Claim 9 (depends on 1) The semiconductor light emitting device of claim 1, wherein the first conductive electrode and the second conductive electrode are disposed up and down in a state that the first conductive semiconductor layer and the second conductive semiconductor layer are interposed therebetween. ### Claim 10 (depends on 1) The semiconductor light emitting device of claim 1, wherein the second region has an area corresponding to 30 to 40% of an area of one surface of the first conductive semiconductor layer. ### Claim 11 (depends on 1) The semiconductor light emitting device of claim 1, wherein an adhesive electrode is disposed between the second region and the passivation layer. ### Claim 12 (depends on 11) The semiconductor light emitting device of claim 11, wherein the adhesive electrode includes one of chrome and nickel. ### Claim 13 A vehicle lamp having a plurality of semiconductor light emitting devices, wherein at least one of the semiconductor light emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode; a second conductive semiconductor layer overlapped with the first conductive semiconductor layer, and having the second conductive electrode; and a passivation layer formed to enclose the semiconductor light emitting device, wherein one surface of the first conductive semiconductor layer is divided into a first region where the first conductive electrode is disposed, and a second region covered by the passivation layer, wherein the passivation layer is provided with a plurality of layers having different refractive indexes, such that light is reflected from the second region, wherein the passivation layer includes a first part which covers side surfaces of the semiconductor light emitting device, and a second part which covers one surface of the first conductive semiconductor layer, wherein the first part is formed as a single layer, and wherein the second part is formed of the plurality of layers.