# US 10,121,922 B2 · Tunneling barrier infrared detector devices

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- Number: US 10,121,922 B2
- Document ID: US10121922B2
- Status: Granted
- Kind: B2
- Application number: 15/807,913
- Filed: 2017-11-09
- Published: 2018-03-15
- Granted: 2018-11-06
- Earliest claimed: 2014-04-15
- Assignees: L3 Cincinnati Electronics Corporation
- Applicants: L3 Cincinnati Electronics Corporation
- Inventors: Yajun Wei
- Web page: https://patentgrep.com/patent/US10121922B2

## CPC

- H10F 77/1468: {Doped superlattices, e.g. N-I-P-I superlattices}
- H10F 30/21: the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F 30/222: the potential barrier being a PN heterojunction
- H10F 30/288: {the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices}
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F 77/143: {comprising quantum structures}
- H10F 77/146: {Superlattices; Multiple quantum well structures}
- H10F 77/206: {for devices having potential barriers}
- H10F 10/16: Photovoltaic cells having only PN heterojunction potential barriers
- H10F 71/1272: {comprising at least three elements, e.g. GaAlAs or InGaAsP}
- H10F 77/12: Active materials
- Y02E 10/544: Solar cells from Group III-V materials
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.

## Claims

### Claim 1

An infrared detector device comprising:
a first contact layer;
an absorber layer adjacent to the first contact layer, wherein the absorber layer is doped p-type;
a hole barrier layer adjacent to the absorber layer, wherein:
a bandgap of the hole barrier layer is greater than a bandgap of the absorber layer; and
the hole barrier layer comprises a p-n junction;
a first barrier layer adjacent to the hole barrier layer, wherein a valence band offset of the first barrier layer is above a conduction band offset that is within the hole barrier layer at an interface between the hole barrier layer and the first barrier layer;
a second barrier layer adjacent to the first barrier layer; and
a second contact layer adjacent to the second barrier layer.

### Claim 2 (depends on 1)

The infrared detector device of claim 1, wherein the first barrier layer, the second barrier layer, and the second contact layer are doped p+.

### Claim 3 (depends on 1)

The infrared detector device of claim 1, wherein:
the first barrier layer comprises (GaSb)x(AlAs0.08Sb0.92)1-x that is p doped; and
the second barrier layer comprises (GaSb)y(AlAs0.08Sb0.92)1-y with y>x and a background p-type doping.

### Claim 4 (depends on 3)

The infrared detector device of claim 3, wherein the first barrier layer is p-doped to 3×1018 cm−3.

### Claim 5 (depends on 3)

The infrared detector device of claim 3, wherein the second barrier layer is p-doped on the order of 1018 cm−3.

### Claim 6 (depends on 1)

The infrared detector device of claim 1, wherein the second contact layer is n-doped.

### Claim 7 (depends on 1)

The infrared detector device of claim 1, wherein
the absorber layer comprises long-wave infrared material;
the hole barrier layer comprises mid-wave infrared material; and
the second contact layer comprises mid-wave infrared material.

### Claim 8 (depends on 1)

The infrared detector device of claim 1, wherein a tunneling structure is provided by the hole barrier layer and the first barrier layer.

### Claim 9 (depends on 8)

The infrared detector device of claim 8, wherein, during operation of the infrared detector device, minority electrons meet and recombine with majority holes on a barrier side of the tunneling structure.

### Claim 10

A focal plane array comprising an array of infrared detector devices, each infrared detector device comprising:
a first contact layer;
an absorber layer adjacent to the first contact layer, wherein the absorber layer is doped p-type;
a hole barrier layer adjacent to the absorber layer, wherein:
a bandgap of the hole barrier layer is greater than a bandgap of the absorber layer; and
the hole barrier layer comprises a p-n junction;
a first barrier layer adjacent to the hole barrier layer, wherein a valence band offset of the first barrier layer is above a conduction band offset that is within the hole barrier layer at an interface between the hole barrier layer and the first barrier layer;
a second barrier layer adjacent to the first barrier layer; and
a second contact layer adjacent to the second barrier layer.

### Claim 11 (depends on 10)

The focal plane array of claim 10, wherein the first barrier layer, the second barrier layer, and the second contact layer are doped p+.

### Claim 12 (depends on 10)

The focal plane array of claim 10, wherein:
the first barrier layer comprises (GaSb)x(AlAs0.08Sb0.92)1-x that is p doped; and
the second barrier layer comprises (GaSb)y(AlAs0.08Sb0.92)1-y with y>x and a background p-type doping.

### Claim 13 (depends on 12)

The focal plane array of claim 12, wherein the first barrier layer is p-doped to 3×1018 cm−3.

### Claim 14 (depends on 12)

The focal plane array of claim 12, wherein the second barrier layer is p-doped on the order of 1018 cm−3.

### Claim 15 (depends on 10)

The focal plane array of claim 10, wherein the second contact layer is n-doped.

### Claim 16 (depends on 10)

The focal plane array of claim 10, wherein
the absorber layer comprises long-wave infrared material;
the hole barrier layer comprises mid-wave infrared material; and
the second contact layer comprises mid-wave infrared material.

### Claim 17 (depends on 10)

The focal plane array of claim 10, wherein a tunneling structure is provided by the hole barrier layer and the first barrier layer.

### Claim 18 (depends on 17)

The focal plane array of claim 17, wherein, during operation of the focal plane array, minority electrons meet and recombine with majority holes on a barrier side of the tunneling structure.