# US 10,121,921 B2 · Tunneling barrier infrared detector devices

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- Number: US 10,121,921 B2
- Document ID: US10121921B2
- Status: Granted
- Kind: B2
- Application number: 15/372,978
- Filed: 2016-12-08
- Published: 2017-03-30
- Granted: 2018-11-06
- Earliest claimed: 2014-04-15
- Assignees: L3 Cincinnati Electronics Corporation
- Applicants: L3 Cincinnati Electronics Corporation
- Inventors: Yajun Wei
- Web page: https://patentgrep.com/patent/US10121921B2

## CPC

- H10F 77/1468: {Doped superlattices, e.g. N-I-P-I superlattices}
- H10F 30/21: the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F 30/222: the potential barrier being a PN heterojunction
- H10F 30/288: {the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices}
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F 77/143: {comprising quantum structures}
- H10F 77/146: {Superlattices; Multiple quantum well structures}
- H10F 77/206: {for devices having potential barriers}
- H10F 10/16: Photovoltaic cells having only PN heterojunction potential barriers
- H10F 71/1272: {comprising at least three elements, e.g. GaAlAs or InGaAsP}
- H10F 77/12: Active materials
- Y02E 10/544: Solar cells from Group III-V materials
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.

## Claims

### Claim 1

An infrared detector device comprising:
a first contact layer;
an absorber layer adjacent to the first contact layer, wherein the absorber layer is doped p-type;
a first barrier layer adjacent to the absorber layer;
an n-type layer adjacent to the first barrier layer, wherein:
a bandgap of the n-type layer is greater than a bandgap of the absorber layer; and
a valence band offset of the first barrier layer at an interface between the first barrier layer and the n-type layer is above a conduction band offset that is within the n-type layer;
a second barrier layer adjacent to the n-type layer; and
a second contact layer adjacent to the second barrier layer.

### Claim 2 (depends on 1)

The infrared detector device of claim 1, wherein the second barrier layer comprises nominally undoped (GaSb)y(AlAs0.08Sb0.92)1-y.

### Claim 3 (depends on 1)

The infrared detector device of claim 1, wherein the first barrier layer comprises a graded structure.

### Claim 4 (depends on 1)

The infrared detector device of claim 1, wherein:
the first barrier layer comprises (GaSb)x(AlAs0.08Sb0.92)1-x with linearly graded x values; and
the first barrier layer is doped p-type.

### Claim 5 (depends on 1)

The infrared detector device of claim 1, further comprising a third barrier layer positioned between the second barrier layer and the second contact layer such that the third barrier layer is adjacent to the second contact layer, wherein a valence band offset of the third barrier layer at an interface between the third barrier layer and the second contact layer is above a conduction band offset of the second contact layer.

### Claim 6 (depends on 5)

The infrared detector device of claim 5, wherein the third barrier layer comprises (GaSb)x(AlAs0.08Sb0.92)1-x with x value chosen such that there is the broken gap type II band alignment with the second contact layer.

### Claim 7 (depends on 5)

The infrared detector device of claim 5, wherein the third barrier layer comprises (GaSb)x(AlAs0.08Sb0.92)1-x.

### Claim 8 (depends on 1)

The infrared detector device of claim 1, wherein the n-type layer and the second contact layer comprise a mid-wave infrared material having a bandgap wider than the absorber layer.