# US 10,121,912 B2 · High density capacitor integrated into focal plane array processing flow

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- Number: US 10,121,912 B2
- Document ID: US10121912B2
- Status: Granted
- Kind: B2
- Application number: 14/519,486
- Filed: 2014-10-21
- Published: 2015-02-05
- Granted: 2018-11-06
- Earliest claimed: 2012-04-10
- Assignees: DRS Network & Imaging Systems, LLC
- Applicants: DRS Network & Imaging Systems, LLC
- Inventors: Kirk D. Peterson; Eugene E. Krueger; Cari A. Ossenfort; Daniel B. Jardine; George D. Skidmore
- Web page: https://patentgrep.com/patent/US10121912B2

## CPC

- H10F 77/953: {for devices having potential barriers}
- H10F 39/026: {Wafer-level processing}
- H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
- H10F 39/184: {Infrared image sensors}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F 77/206: {for devices having potential barriers}
- H10F 77/40: Optical elements or arrangements (surface textures H10F77/70)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Methods and structures of photodetectors are described. The structure may include a readout integrated circuit substrate having an internally integrated capacitor. The structure may additionally include an external capacitor overlying the readout integrated circuit substrate. The external capacitor may be coupled with the internally integrated capacitor of the readout integrated circuit substrate, and configured to operate in parallel with the internally integrated capacitor of the readout integrated circuit substrate. The structure may also include a detector overlying the external capacitor.

## Claims

### Claim 1

A photodetector structure comprising:
a readout integrated circuit substrate having an internally integrated capacitor;
an external capacitor overlying the readout integrated circuit substrate, wherein the external capacitor is coupled with the internally integrated capacitor of the readout integrated circuit substrate and configured to operate in parallel with the internally integrated capacitor of the readout integrated circuit substrate; and
a detector overlying the external capacitor.

### Claim 2 (depends on 1)

The photodetector structure of claim 1, further comprising a reflector material layer overlying the external capacitor, and located below the detector.

### Claim 3 (depends on 2)

The photodetector structure of claim 2, wherein the reflector material is configured to provide electrical coupling of an electrode of the external capacitor with the readout integrated circuit substrate.

### Claim 4 (depends on 1)

The photodetector structure of claim 1, wherein the detector comprises a photodiode.

### Claim 5 (depends on 1)

The photodetector structure of claim 1, wherein the external capacitor further comprises:
a first electrode overlying the readout integrated circuit substrate;
a dielectric material overlying the first electrode; and
a second electrode overlying the dielectric material.

### Claim 6 (depends on 5)

The photodetector structure of claim 5, wherein each of the first electrode and second electrode include a first layer of electrode material and a second layer of electrode material.

### Claim 7 (depends on 6)

The photodetector structure of claim 6, wherein the first layer of electrode material of the first electrode and the second layer of electrode material of the second electrode comprise the same material.

### Claim 8 (depends on 6)

The photodetector structure of claim 6, wherein the first electrode and the second electrode comprise a transition metal-containing material.

### Claim 9 (depends on 5)

The photodetector structure of claim 5, wherein the dielectric material comprises a transition metal-containing material or a poor metal-containing material.

### Claim 10 (depends on 9)

The photodetector structure of claim 9, wherein the dielectric material comprises at least two layers of dielectric material.

### Claim 11 (depends on 10)

The photodetector structure of claim 10, wherein the at least two layers of dielectric material comprise a different material in each layer.

### Claim 12 (depends on 10)

The photodetector structure of claim 10, wherein the dielectric material comprises at least three layers of material.

### Claim 13 (depends on 12)

The photodetector structure of claim 12, wherein each layer of dielectric material comprises a material different from the material directly over which it lies.