# US 10,121,904 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,904 B2 - Document ID: US10121904B2 - Status: Granted - Kind: B2 - Application number: 15/678,180 - Filed: 2017-08-16 - Published: 2018-01-25 - Granted: 2018-11-06 - Earliest claimed: 2009-11-20 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Kiyoshi Kato; Jun Koyama - Web page: https://patentgrep.com/patent/US10121904B2 ## CPC - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - G06K 19/07749: {the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card} - G06K 19/07773: {Antenna details (antennas for wireless devices, e.g. RFID tags, in general H01Q1/22)} - H04B 1/40: Circuits - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 62/235: {of IGFETs (IGFETs having buried channels H10D30/637)} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10D 88/00: Three-dimensional [3D] integrated devices - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H10W 44/248: {for antennas} - Y02D 30/70: in wireless communication networks - Y02E 60/10: Energy storage using batteries - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G06K: GRAPHICAL DATA READING (image or video recognition or understanding G06V); PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS - H04B: TRANSMISSION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - Y02D: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime. ## Claims ### Claim 1 A semiconductor device comprising: a secondary battery configured to be charged by wireless communication through a first circuit, the first circuit configured to rectify a signal input by the wireless communication; a second circuit electrically connected to the secondary battery, the second circuit comprising a transistor, the transistor comprising a channel formation region comprising an oxide semiconductor; a third circuit comprising a plurality of n-channel transistors; a fourth circuit electrically connected to the second circuit; wherein a first signal is input to the fourth circuit from the second circuit, wherein a second signal is input to the transistor from the fourth circuit, and wherein the transistor is provided between the first and the third circuits. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the third circuit is configured to perform operation in a period when the transistor is in an on state. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the plurality of n-channel transistors have different structures. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein a hydrogen concentration in the channel formation region of the transistor is lower than or equal to 5×1019 atoms/cm3. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor comprises indium and zinc. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, further comprising a gate electrode comprising copper, wherein the gate electrode and the channel formation region of the transistor overlap each other. ### Claim 7 A semiconductor device comprising: a secondary battery configured to be charged by wireless communication through a first circuit, the first circuit configured to rectify a signal input by the wireless communication; a second circuit electrically connected to the secondary battery, the second circuit comprising a transistor, the transistor comprising a channel formation region comprising an oxide semiconductor; a third circuit comprising a plurality of n-channel transistors; a fourth circuit electrically connected to the second circuit; wherein a first signal is input to the fourth circuit from the second circuit, wherein a second signal is input to the transistor from the fourth circuit, and wherein the transistor is provided between the first and the third circuits. ### Claim 8 (depends on 7) The semiconductor device according to claim 7, wherein the third circuit is configured to perform operation in a period when the transistor is in an on state. ### Claim 9 (depends on 7) The semiconductor device according to claim 7, wherein a hydrogen concentration in the channel formation region of the transistor is lower than or equal to 5×1019 atoms/cm3. ### Claim 10 (depends on 7) The semiconductor device according to claim 7, wherein the oxide semiconductor comprises indium and zinc. ### Claim 11 (depends on 7) The semiconductor device according to claim 7, further comprising a gate electrode comprising copper, wherein the gate electrode and the channel formation region of the transistor overlap each other. ### Claim 12 A semiconductor device comprising: a secondary battery configured to be charged by wireless communication through a first circuit, the first circuit configured to rectify a signal input by the wireless communication; a second circuit electrically connected to the secondary battery, the second circuit comprising a transistor, the transistor comprising a channel formation region comprising an oxide semiconductor; a third circuit comprising a logic gate; a fourth circuit electrically connected to the second circuit; wherein a first signal is input to the fourth circuit from the second circuit, wherein a second signal is input to the transistor from the fourth circuit, and wherein the transistor is provided between the first and the third circuits. ### Claim 13 (depends on 12) The semiconductor device according to claim 12, wherein the third circuit is configured to perform operation in a period when the transistor is in an on state. ### Claim 14 (depends on 12) The semiconductor device according to claim 12, wherein a hydrogen concentration in the channel formation region of the transistor is lower than or equal to 5×1019 atoms/cm3. ### Claim 15 (depends on 12) The semiconductor device according to claim 12, wherein the oxide semiconductor comprises indium and zinc. ### Claim 16 (depends on 12) The semiconductor device according to claim 12, further comprising a gate electrode comprising copper, wherein the gate electrode and the channel formation region of the transistor overlap each other.