# US 10,121,898 B2 · Thin-film transistor substrate and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,898 B2 - Document ID: US10121898B2 - Status: Granted - Kind: B2 - Application number: 15/309,794 - Filed: 2015-04-17 - Published: 2017-08-31 - Granted: 2018-11-06 - Earliest claimed: 2014-05-09 - Assignees: Joled Inc. - Applicants: Joled Inc. - Inventors: Yuta Sugawara - Web page: https://patentgrep.com/patent/US10121898B2 ## CPC - H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device} - H10D 30/6739: {Conductor-insulator-semiconductor electrodes} - H10D 30/6756: {Amorphous oxide semiconductors} - H10D 62/402: {Amorphous materials} - H10D 62/80: characterised by the materials - H10D 62/875: {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)} - H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies} - H10D 86/0251: {characterised by increasing the uniformity of device parameters} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - H10P 14/3454: {Amorphous} - H10P 14/6306: {of the semiconductor materials} - H10P 14/6319: {Formation by plasma treatments, e.g. plasma oxidation of the substrate} - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10P 14/69391: {the material containing aluminium, e.g. Al2O3} - H10K 59/1213: {the pixel elements being TFTs} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A method of manufacturing a TFT substrate includes the steps of forming an oxide semiconductor layer above a substrate, forming a first oxide film on the oxide semiconductor layer, performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film, and forming a second oxide film on the first oxide film after the oxidation processing. ## Claims ### Claim 1 A thin-film transistor substrate manufactured by a method comprising: forming an oxide semiconductor layer above a substrate; forming a first oxide film on the oxide semiconductor layer; performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film, wherein a duration of the oxidation processing increases with a film deposition temperature of the first oxide film; and forming a second oxide film on the first oxide film after the oxidation processing, wherein in concentration profiles of elements in a direction of lamination, a concentration profile of fluorine elements shows a peak in proximity to a boundary between the first oxide film and the second oxide film, a concentration profile of nitric oxide shows that a concentration in proximity to the boundary is higher than a concentration in proximity to a center of the second oxide film, and a concentration profile of hydrogen elements discontinuously changes in proximity to the boundary. ### Claim 2 (depends on 1) The thin-film transistor substrate according to claim 1, wherein a film deposition temperature of the first oxide film is 270° C. or higher. ### Claim 3 (depends on 2) The thin-film transistor substrate according to claim 2, wherein a duration of the oxidation processing increases with a film thickness of the first oxide film. ### Claim 4 (depends on 1) The thin-film transistor substrate according to claim 1, wherein a duration of the oxidation processing increases with a film thickness of the first oxide film. ### Claim 5 (depends on 1) The thin-film transistor substrate according to claim 1, wherein the first oxide film has a film thickness that is greater than or equal to 5 nm and less than or equal to 40 nm. ### Claim 6 (depends on 1) The thin-film transistor substrate according to claim 1, wherein a duration of the oxidation processing increases with a film deposition temperature of the second oxide film. ### Claim 7 (depends on 1) The thin-film transistor substrate according to claim 1, wherein the oxidation processing includes plasma treatment. ### Claim 8 (depends on 7) The thin-film transistor substrate according to claim 7, wherein the plasma treatment is performed using a nitrous oxide gas for a period of time that is greater than or equal to 5 seconds and less than or equal to 300 seconds. ### Claim 9 (depends on 1) The thin-film transistor substrate according to claim 1, wherein the first oxide film and the second oxide film are silicon oxide films. ### Claim 10 (depends on 1) The thin-film transistor substrate according to claim 1, wherein the oxide semiconductor layer is a transparent amorphous oxide semiconductor. ### Claim 11 (depends on 1) The thin-film transistor substrate according to claim 1, wherein the oxide semiconductor layer is InGaZnO. ### Claim 12 A thin-film transistor substrate comprising: a substrate; an oxide semiconductor layer; a first oxide film; and a second oxide film, the oxide semiconductor layer, the first oxide film, and the second oxide film being sequentially laminated above the substrate, wherein in concentration profiles of elements in a direction of lamination, a concentration profile of fluorine elements shows a peak in proximity to a boundary between the first oxide film and the second oxide film, a concentration profile of nitric oxide shows that a concentration in proximity to the boundary is higher than a concentration in proximity to a center of the second oxide film, and a concentration profile of hydrogen elements discontinuously changes in proximity to the boundary. ### Claim 13 A thin-film transistor substrate manufactured by a method comprising: forming an oxide semiconductor layer above a substrate; forming a first oxide film on the oxide semiconductor layer; performing oxidation processing on the oxide semiconductor layer after formation of the first oxide film; and forming a second oxide film on the first oxide film after the oxidation processing, wherein a film deposition temperature of the second oxide film is the same as a temperature during the oxidation processing, wherein in concentration profiles of elements in a direction of lamination, a concentration profile of fluorine elements shows a peak in proximity to a boundary between the first oxide film and the second oxide film, a concentration profile of nitric oxide shows that a concentration in proximity to the boundary is higher than a concentration in proximity to a center of the second oxide film, and a concentration profile of hydrogen elements discontinuously changes in proximity to the boundary. ### Claim 14 (depends on 13) The thin-film transistor substrate according to claim 13, wherein the oxidation processing includes plasma treatment. ### Claim 15 (depends on 14) The thin-film transistor substrate according to claim 14, wherein the plasma treatment is performed using a nitrous oxide gas for a period of time that is greater than or equal to 5 seconds and less than or equal to 300 seconds. ### Claim 16 (depends on 13) The thin-film transistor substrate according to claim 13, wherein the first oxide film and the second oxide film are silicon oxide films. ### Claim 17 (depends on 13) The thin-film transistor substrate according to claim 13, wherein the oxide semiconductor layer is a transparent amorphous oxide semiconductor. ### Claim 18 (depends on 13) The thin-film transistor substrate according to claim 13, wherein the oxide semiconductor layer is InGaZnO.