# US 10,121,892 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,892 B2 - Document ID: US10121892B2 - Status: Granted - Kind: B2 - Application number: 15/252,208 - Filed: 2016-08-30 - Published: 2017-09-14 - Granted: 2018-11-06 - Earliest claimed: 2016-03-08 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Tatsuya Nishiwaki - Web page: https://patentgrep.com/patent/US10121892B2 ## CPC - H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence) - H10D 30/0297: {using recessing of the gate electrodes, e.g. to form trench gate electrodes} - H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates} - H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs} - H10D 64/20: Electrodes characterised by their shapes, relative sizes or dispositions - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a third semiconductor region of the first conductivity type on the second semiconductor region, a first electrode surrounded by the first semiconductor region, a first insulating portion between a first part of the first electrode and the first semiconductor region, a second insulating portion having a higher dielectric constant than the first insulating portion, between a second part of the first electrode and the first semiconductor region, a gate electrode above the first electrode, and a gate insulating portion between the second semiconductor region and the gate electrode. ## Claims ### Claim 1 A semiconductor device comprising: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type on the first semiconductor region; a third semiconductor region of the first conductivity type on the second semiconductor region; a first electrode surrounded by the first semiconductor region; a gate electrode above the first electrode; a gate insulating portion between the second semiconductor region and the gate electrode; a first insulating portion in contact with a first part of the first electrode and between the first part of the first electrode and the first semiconductor region; and a second insulating portion having a higher dielectric constant than the first insulating portion and the same dielectric constant as the gate insulating portion, in contact with a second part of the first electrode and between the second part of the first electrode and the first semiconductor region, the second part of the first electrode located closer to the gate electrode than the first part of the first electrode. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the first insulating portion is an air gap. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein the first insulating portion includes a first insulating layer between the first semiconductor region and the air gap and a second insulating layer between the first part of the first electrode and the air gap. ### Claim 4 (depends on 2) The semiconductor device according to claim 2, wherein the first insulating portion includes an insulating layer in contact with the first semiconductor region and a lower surface of the first part of the first electrode. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the first insulating portion includes an insulating layer in contact with the first part of the first electrode and the first semiconductor region such that there is no air gap between the first part of the first electrode and the first semiconductor region. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, wherein the second insulating portion electrically isolates the first electrode from the gate electrode. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the first part is longer in a direction toward the gate electrode than the second part. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the gate electrode extends in a first direction and the first electrode includes a first portion that extends in the first direction below the gate electrode and a second portion that extends in a second direction to be higher than an upper end of the first portion. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein the gate electrode is connected to the first portion of the first electrode. ### Claim 10 (depends on 8) The semiconductor device according to claim 8, wherein the second portion is aligned with the gate electrode along the first direction. ### Claim 11 (depends on 8) The semiconductor device according to claim 8, wherein the second portion is not aligned with the gate electrode along the first direction. ### Claim 12 A semiconductor device comprising: a drain electrode; a drain region electrically coupled to the drain electrode; a first semiconductor region on the drain region; a second semiconductor region on the first semiconductor region; a contact region and a source region, each selectively provided on the second semiconductor region; a source electrode electrically coupled to the contact region and the source region; a field plate electrode surrounded by the first semiconductor region and separated from the first semiconductor region by first and second insulating portions, the first insulating portion located closer to the drain region and having a lower dielectric constant than the second insulating portion; a gate electrode above the field plate electrode and electrically isolated from the source electrode; and a gate insulating portion, between the second semiconductor region and the gate electrode, and having the same dielectric constant as the second insulating portion. ### Claim 13 (depends on 12) The semiconductor device according to claim 12, wherein the first insulating portion is an air gap. ### Claim 14 (depends on 13) The semiconductor device according to claim 13, wherein the first insulating portion includes a first insulating layer between the first semiconductor region and the air gap and a second insulating layer between the field plate electrode and the air gap. ### Claim 15 (depends on 13) The semiconductor device according to claim 13, wherein the first insulating portion includes an insulating layer in contact with the first semiconductor region and a lower surface of the field plate electrode. ### Claim 16 (depends on 12) The semiconductor device according to claim 12, wherein the second insulating portion electrically isolates the field plate electrode from the gate electrode. ### Claim 17 (depends on 12) The semiconductor device according to claim 12, wherein the gate electrode extends in a first direction and the field plate electrode includes a first portion that extends in the first direction below the gate electrode and a second portion that extends in a second direction to be higher than an upper end of the first portion. ### Claim 18 (depends on 17) The semiconductor device according to claim 17, wherein the gate electrode is connected to the field plate electrode. ### Claim 19 (depends on 17) The semiconductor device according to claim 17, wherein the second portion is aligned with the gate electrode along the first direction. ### Claim 20 (depends on 17) The semiconductor device according to claim 17, wherein the second portion is not aligned with the gate electrode along the first direction. ### Claim 21 (depends on 12) The semiconductor device according to claim 12, wherein the first insulating portion includes an insulating layer in contact with the field plate electrode and the first semiconductor region such that there is no air gap between the field plate electrode and the first semiconductor region.