# US 10,121,854 B2 · Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic device

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- Number: US 10,121,854 B2
- Document ID: US10121854B2
- Status: Granted
- Kind: B2
- Application number: 15/605,057
- Filed: 2017-05-25
- Published: 2017-11-16
- Granted: 2018-11-06
- Earliest claimed: 2015-04-07
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Jinseong Heo; Kiyoung Lee; Jaeho Lee; Seongjun Park
- Web page: https://patentgrep.com/patent/US10121854B2

## CPC

- H10D 62/118: {Nanostructure semiconductor bodies}
- H10D 30/021: {of FETs having insulated gates [IGFET]}
- H10D 30/504: {wherein the stacked channels have different properties}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 30/6729: {characterised by the electrodes}
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D 30/6741: {Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755)}
- H10D 30/6748: {having a multilayer structure or superlattice structure}
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates}
- H10P 32/1406: {by ion implantation}
- H10P 32/171: {being group IV material}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

## Claims

### Claim 1

An electronic device comprising:
a substrate;
an energy barrier forming layer on the substrate;
an upper channel material layer on the substrate, the upper channel material layer including a two-dimensional (2D) material, the upper channel material layer at least partially covering an upper surface of the energy barrier forming layer;
a lower channel material layer on the substrate;
a gate electrode that covers the upper channel material layer and the energy barrier forming layer, the gate electrode including a side gate electrode portion that faces a side surface of the energy barrier forming layer;
a drain electrode on the substrate; and
a source electrode on the upper channel material layer,
wherein the lower channel material layer is in direct contact with only the drain electrode of the source electrode and the drain electrode and is separated from the source electrode, and
wherein the upper channel material layer is in direct contact with only the source electrode of the source electrode and the drain electrode and is separated from the drain electrode.

### Claim 2 (depends on 1)

The electronic device of claim 1, wherein the lower channel material layer is isolated from contact with the upper channel material layer, the lower channel material layer is at least partially located between the energy barrier forming layer and the substrate.

### Claim 3 (depends on 1)

The electronic device of claim 1, further comprising:
an interlayer insulating layer,
wherein the substrate includes a semiconductor substrate that includes separate areas, each separate area associated with a different doping concentration, the interlayer insulating layer is on a low doping concentration area of the separate areas, and
at least a portion of the upper channel material layer and at least a portion of the source electrode are on the interlayer insulating layer.

### Claim 4 (depends on 1)

The electronic device of claim 1, further comprising:
an interlayer insulating layer,
wherein the substrate includes a semiconductor substrate that includes separate areas, each separate area of the semiconductor substrate includes a different doping concentration, the interlayer insulating layer is buried in the semiconductor substrate, and
the buried interlayer insulating layer is in contact with a high doping concentration area of the separate areas of the semiconductor substrate.

### Claim 5 (depends on 1)

The electronic device of claim 1, wherein the energy barrier forming layer includes a first material layer and a second material layer,
wherein one material layer of the first material layer and the second material layer includes a p-type material layer, and another material layer of the first material layer and the second material layer includes an n-type material layer.

### Claim 6 (depends on 1)

The electronic device of claim 1, further comprising:
a hole penetrating through at least a portion of each of the upper channel material layer and the energy barrier forming layer,
wherein the gate electrode includes a portion which faces a side surface of the energy barrier forming layer, the side surface being exposed through the hole.

### Claim 7 (depends on 1)

The electronic device of claim 1, further comprising:
a hole penetrating through at least a portion of each of the upper channel material layer, the energy barrier forming layer, and the lower channel material layer,
wherein the gate electrode includes a portion which faces a side surface of the energy barrier forming layer, the side surface being exposed through the hole.

### Claim 8 (depends on 1)

The electronic device of claim 1, wherein,
the energy barrier forming layer comprises a first material layer and a second material layer, and
one material layer of the first material layer and the second material layer includes a p-type material layer, and another material layer of the first material layer and the second material layer includes an n-type material layer.

### Claim 9 (depends on 1)

The electronic device of claim 1, further comprising an insulating layer between the substrate and the lower channel material layer.

### Claim 10 (depends on 3)

The electronic device of claim 3, wherein,
a high doping concentration area of the separate areas of the semiconductor substrate is located beneath a surface of the semiconductor substrate, and
a portion of the upper channel material layer and a portion of the drain electrode at least partially overlap the high doping concentration area.

### Claim 11 (depends on 3)

The electronic device of claim 3, further comprising a 2D material layer between the drain electrode and the substrate.

### Claim 12 (depends on 10)

The electronic device of claim 10, wherein a portion of the semiconductor substrate is located between a high doping concentration area of the separate areas of the semiconductor substrate and the upper channel material layer, the portion of the semiconductor substrate includes the energy barrier forming layer.

### Claim 13 (depends on 8)

The electronic device of claim 8, wherein the first material layer and the second material layer are horizontally arranged or vertically stacked.

### Claim 14 (depends on 9)

The electronic device of claim 9, further comprising a lower gate electrode that is buried in the insulating layer.

### Claim 15 (depends on 9)

The electronic device of claim 9, wherein,
the energy barrier forming layer comprises a first material layer and a second material layer, and
one material layer of the first material layer and the second material layer includes a p-type material layer, and another material layer of the first material layer and the second material layer includes an n-type material layer.

### Claim 16 (depends on 15)

The electronic device of claim 15, wherein,
the first and second material layers are vertically stacked, and
the substrate or the gate electrode is transparent with respect to light.

### Claim 17

An electronic device comprising:
a first semiconductor device; and
a second semiconductor device,
wherein each of the first and second semiconductor devices includes,
a substrate;
an energy barrier forming layer on the substrate, wherein one energy barrier forming layer of the first semiconductor device or the energy barrier forming layer of the second semiconductor device includes a p-type material layer, and the other energy barrier forming layer of the first semiconductor device or the energy barrier forming layer of the second semiconductor device includes an n-type material layer;
an upper channel material layer on the substrate, the upper channel material layer including a two-dimensional (2D) material, the upper channel material layer at least partially covering an upper surface of the energy barrier forming layer;
a lower channel material layer on the substrate;
a gate electrode that covers the upper channel material layer and the energy barrier forming layer, the gate electrode including a side gate electrode portion that faces a side surface of the energy barrier forming layer;
a first terminal on the substrate; and
a second terminal on the upper channel material layer,
wherein the first terminals or the second terminals of the first and second semiconductor devices are connected to each other, and the gate electrodes of the first and second semiconductor devices are connected to each other,
wherein the lower channel material layer is in direct contact with only the first terminal of the first terminal and the second terminal and is separated from the second terminal, and
wherein the upper channel material layer is in direct contact with only the second terminal of the first terminal and the second terminal and is separated from the first terminal.

### Claim 18 (depends on 17)

The electronic device of claim 17, wherein,
the upper channel material layers of the first semiconductor device and the second semiconductor device are connected to each other and form one body, and
the second terminals of the first semiconductor device and the second semiconductor device are connected to each other.

### Claim 19 (depends on 17)

The electronic device of claim 17, wherein the first terminals of the first semiconductor device and the second semiconductor device are connected to each other.

### Claim 20 (depends on 17)

The electronic device of claim 17, the lower channel material layer is isolated from contact with the upper channel material layer, the lower channel material layer is at least partially located between the energy barrier forming layer and the substrate.

### Claim 21 (depends on 17)

The electronic device of claim 17, further comprising an insulating layer between the substrate and the lower channel material layer.

### Claim 22 (depends on 21)

The electronic device of claim 21, further comprising a lower gate electrode that is buried in the insulating layer.

### Claim 23

An electronic device comprising:
a substrate;
an energy barrier forming layer on the substrate;
an upper channel material layer on the substrate, the upper channel material layer including a two-dimensional (2D) material, the upper channel material layer at least partially covering an upper surface of the energy barrier forming layer;
a gate insulating layer on the substrate;
a gate electrode that covers the upper channel material layer and the energy barrier forming layer, the gate electrode including a side gate electrode portion that faces a side surface of the energy barrier forming layer;
a drain electrode on the substrate; and
a source electrode on the upper channel material layer,
wherein the gate insulating layer includes a side portion that covers a side surface of the energy barrier forming layer and the side gate electrode portion is direct contact with the side portion of the gate insulating layer; and
wherein the upper channel material layer is in direct contact with only the source electrode of the source electrode and the drain electrode.

### Claim 24

A method of manufacturing an electronic device, the method comprising:
forming an energy barrier forming layer on a substrate;
forming, on the substrate, an upper channel material layer that covers an upper surface of the energy barrier forming layer, the upper channel material layer including a two-dimensional (2D) material layer;
forming a lower channel material layer on the substrate;
forming a gate electrode that covers the energy barrier forming layer and the upper channel material layer, such that a portion of the gate electrode faces a side surface of the energy barrier forming layer;
forming a drain electrode on the substrate; and
forming a source electrode on the upper channel material layer,
wherein the lower channel material layer is in direct contact with only the drain electrode of the source electrode and the drain electrode and is separated from the source electrode; and
wherein the upper channel material layer is in direct contact with only the source electrode of the source electrode and the drain electrode and is separated from the drain electrode.

### Claim 25 (depends on 24)

The method of claim 24, wherein a portion of the lower channel material layer is formed between the energy barrier forming layer and the substrate.

### Claim 26 (depends on 24)

The method of claim 24, wherein,
the substrate includes a semiconductor substrate, and
the method further includes
forming an area of the semiconductor substrate which includes a relatively high doping concentration in the semiconductor substrate;
forming an interlayer insulating layer on an area of the semiconductor substrate which includes a relatively low doping concentration; and
forming a portion of the upper channel material layer and the source electrode on the interlayer insulating layer.

### Claim 27 (depends on 24)

The method of claim 24, wherein,
the substrate includes a semiconductor substrate, and
the method further includes
forming an area of the semiconductor substrate which includes a relatively high doping concentration in the semiconductor substrate; and
burying an interlayer insulating layer in the semiconductor substrate.

### Claim 28 (depends on 24)

The method of claim 24, wherein,
the energy barrier forming layer includes a first material layer and a second material layer, and
one material layer of the first material layer and the second material layer includes a p-type material layer, and another material layer of the first material layer and the second material layer includes an n-type material layer.

### Claim 29 (depends on 25)

The method of claim 25, wherein,
the energy barrier forming layer includes a first material layer and a second material layer, and
one material layer of the first material layer and the second material layer includes a p-type material layer, and another material layer of the first material layer and the second material layer includes an n-type material layer.

### Claim 30 (depends on 25)

The method of claim 25, further comprising forming an insulating layer between the substrate and the lower channel material layer.

### Claim 31 (depends on 30)

The method of claim 30, further comprising forming a buried gate electrode in the insulating layer.

### Claim 32 (depends on 24)

The method of claim 24, further comprising:
forming a hole that penetrates through at least a portion of each of the upper channel material layer and the energy barrier forming layer, before forming the gate electrode,
wherein the gate electrode is formed such that a portion of the gate electrode faces a side surface of the energy barrier forming layer, the side surface being exposed through the hole.

### Claim 33 (depends on 25)

The method of claim 25, further comprising:
forming a hole penetrating through at least a portion of each of the upper channel material layer, the energy barrier forming layer, and the lower channel material layer, before forming the gate electrode,
wherein the gate electrode is formed such that a portion of the gate electrode faces a side surface of the energy barrier forming layer, the side surface being exposed through the hole.

### Claim 34 (depends on 25)

The method of claim 25, wherein the upper and lower channel material layers are formed via at least one of a transfer printing method or a direct growth method.