# US 10,121,840 B2 · Active matrix organic light emitting diode panel and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,840 B2 - Document ID: US10121840B2 - Status: Granted - Kind: B2 - Application number: 15/462,135 - Filed: 2017-03-17 - Published: 2017-07-06 - Granted: 2018-11-06 - Earliest claimed: 2012-12-07 - Assignees: Shanghai Tianma Micro-Electronics Co., Ltd. - Applicants: Shanghai Tianma Micro-Electronics Co., Ltd - Inventors: Zhiyong Xiong; Bengang Zhao - Web page: https://patentgrep.com/patent/US10121840B2 ## CPC - H10K 59/124: Insulating layers formed between TFT elements and OLED elements - H10K 59/352: {the areas of the RGB subpixels being different} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The disclosure discloses an active matrix organic light emitting diode panel and a method for manufacturing the same. The active matrix organic light emitting diode panel includes: a substrate, an organic film formed on the substrate, and a plurality of red, green and blue organic light emitting diodes formed on the organic film. A first recess or a first protrusion is formed in the organic film in a region corresponding to the blue organic light emitting diode. The blue organic light emitting diode is formed on the first recess or first protrusion, and a contact area of the blue organic light emitting diode with the organic film is S r ⁢ ⁢ 0 Lifetime b ⁢ ⁢ 0 Lifetime r ⁢ ⁢ 0 n times as great as a contact area of the red organic light emitting film with the organic film, wherein n is a value ranging from 1.4 to 1.6. ## Claims ### Claim 1 An active matrix organic light emitting diode panel, comprising: a substrate; a patterned layer comprising thin film transistors (TFTs) on the substrate, divided into red, green, and blue regions; a passivation layer disposed on the patterned layer; an organic film formed on the passivation layer; and red, green and blue organic light emitting diodes formed on the organic film, aligning to the red, green, and blue regions respectively; wherein, the red organic light emitting diode is aligned to the red region, wherein the organic film above the red region is flat and has no recess; wherein a first recess is formed on the surface of the organic film above the blue region, and wherein the blue organic light emitting diode is formed on the first recess, wherein a contact area of the blue organic light emitting diode with the organic film is larger than a contact area of the red organic light emitting diode with the organic film; and wherein the contact area of the blue organic light emitting diode with the organic film is 1 Lifetime b0 Lifetime r ⁢ ⁢ 0 n times as great as the contact area of the red organic light emitting diode with the organic film, wherein Sr0 represents the contact area of the red organic light emitting diode with the organic film, Lifetimer0 represents a lifetime of the red organic light emitting diode in a case that the contact area of the red organic light emitting diode with the organic film is Sr0; Lifetimeb0 represents a lifetime of the blue organic light emitting diode in a case that the contact area of the blue organic light emitting diode with the organic film is Sr0; and n is a value ranging from 1.4 to 1.6. ### Claim 2 (depends on 1) The active matrix organic light emitting diode panel according to claim 1, wherein a second recess is formed in the organic film in the green region, and wherein the green organic light emitting diode is formed on the second recess, and wherein a contact area of the green organic light emitting diode with the organic film is larger than the contact area of the red organic light emitting diode with the organic film; wherein the wherein a contact area of the green organic light emitting diode with the organic film is 1 Lifetime g ⁢ ⁢ 0 Lifetime r ⁢ ⁢ 0 n times as great as the contact area of the red organic light emitting diode with the organic film, wherein Lifetimeg0 represents a lifetime of the green organic light emitting diode in a case that the contact area of the green organic light emitting diode with the organic film is Sr0. ### Claim 3 (depends on 1) The active matrix organic light emitting diode panel according to claim 1, wherein an opening area of the first recess is equal to the contact area of the red organic light emitting diode with the organic film. ### Claim 4 (depends on 2) The active matrix organic light emitting diode panel according to claim 2, wherein an opening area of the first recess and an opening area of the second recess each is equal to the contact area of the red organic light emitting diode with the organic film. ### Claim 5 (depends on 1) The active matrix organic light emitting diode panel according to claim 1, wherein the first recess is wedge-shaped, W-shaped or hemispherical. ### Claim 6 (depends on 3) The active matrix organic light emitting diode panel according to claim 3, wherein a depth of the first recess is less than or equal to a thickness of the organic film. ### Claim 7 A method for manufacturing an active matrix organic light emitting diode panel, comprising: providing a substrate; forming an organic film on the substrate; exposing the organic film with a gray-tone mask; etching to remove part of the organic film and forming a first recess on the organic film; and forming red, green and blue organic light emitting diodes on the organic film aligning to a red, a green, and a blue regions in the organic film respectively; wherein the blue organic light emitting diode is formed on the first recess in the organic film aligned to the blue region, wherein the organic film above the red region is flat and has no recess, wherein a contact area of the blue organic light emitting diode with the organic film is larger than a contact area of the red organic light emitting diode with the organic film; and wherein the contact area of the blue organic light emitting diode with the organic film is 1 Lifetime b0 Lifetime r ⁢ ⁢ 0 n times as great as the contact area of the red organic light emitting diode with the organic film, wherein the Sr0 represents the contact area of the red organic light emitting diode with the organic film, Lifetimer0 represents a lifetime of the red organic light emitting diode in a case that the contact area of the red organic light emitting diode with the organic film is Sr0; Lifetimeb0 represents a lifetime of the blue organic light emitting diode in a case that the contact area of the blue organic light emitting diode with the organic film is Sr0; and n is a value ranging from 1.4 to 1.6. ### Claim 8 (depends on 7) The method for manufacturing the active matrix organic light emitting diode panel according to claim 7, further comprising forming a second recess on the organic film, wherein the green organic light emitting diode is formed on the second recess, and wherein a contact area of the green organic light emitting diode with the organic film is larger than the contact area of the red organic light emitting diode with the organic film; wherein the contact area of the green organic light emitting diode with the organic film is 1 Lifetime g ⁢ ⁢ 0 Lifetime r ⁢ ⁢ 0 n times as great as the contact area of the red organic light emitting diode with the organic film, wherein Lifetimeg0 represents a lifetime of the green organic light emitting diode in a case that the contact area of the green organic light emitting diode with the organic film is Sr0. ### Claim 9 (depends on 7) The method for manufacturing the active matrix organic light emitting diode panel according to claim 7, wherein an opening area of the first recess is equal to the contact area of the red organic light emitting diode with the organic film. ### Claim 10 (depends on 8) The method for manufacturing the active matrix organic light emitting diode panel according to claim 8, wherein an opening area of the first recess and an opening area of the second recess each is equal to the contact area of the red organic light emitting diode with the organic film. ### Claim 11 (depends on 7) The method for manufacturing the active matrix organic light emitting diode panel according to claim 7, wherein the first recess is wedge-shaped, W-shaped or hemispherical. ### Claim 12 (depends on 7) The method for manufacturing the active matrix organic light emitting diode panel according to claim 7, wherein a depth of the first recess is less than or equal to a thickness of the organic film. ### Claim 13 (depends on 7) The method for manufacturing the active matrix organic light emitting diode panel according to claim 7, wherein, before forming the organic film on the substrate, the method further comprises: forming a plurality of thin-film transistors on the substrate; and forming a passivation layer on the thin-film transistor.