# US 10,121,836 B2 · Pixel circuit and display device, and a method of manufacturing pixel circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,836 B2 - Document ID: US10121836B2 - Status: Granted - Kind: B2 - Application number: 15/667,909 - Filed: 2017-08-03 - Published: 2017-11-16 - Granted: 2018-11-06 - Earliest claimed: 2006-11-17 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yukihito Iida; Akitsuna Takagi; Katsuhide Uchino - Web page: https://patentgrep.com/patent/US10121836B2 ## CPC - H10K 59/122: Pixel-defining structures or layers, e.g. banks - G09G 3/007: {Use of pixel shift techniques, e.g. by mechanical shift of the physical pixels or by optical shift of the perceived pixels} - G09G 3/3233: with pixel circuitry controlling the current through the light-emitting element - H10D 30/6732: {Bottom-gate only TFTs} - H10D 30/6737: {characterised by the electrode materials} - H10D 30/6739: {Conductor-insulator-semiconductor electrodes} - H10D 30/6743: {Silicon} - H10D 30/6745: {Polycrystalline or microcrystalline silicon} - H10D 64/665: {the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum (having lateral variation H10D64/671)} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT] - H10K 59/131: Interconnections, e.g. wiring lines or terminals - H10K 59/1315: {comprising structures specially adapted for lowering the resistance} - H10K 59/179: Interconnections, e.g. wiring lines or terminals - G09G 2300/0426: Layout of electrodes and connections - G09G 2300/0819: used for counteracting undesired variations, e.g. feedback or autozeroing - G09G 2300/0842: forming a memory circuit, e.g. a dynamic memory with one capacitor - G09G 2300/0866: by means of changes in the pixel supply voltage - G09G 2320/0626: for control of overall brightness - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The display device including a pixel circuit has a first line, a transistor, a light emitting element, and a second line. The transistor is located between the second line and an electrode of the light emitting element. Either the first line or the second line is wired in a region that overlaps a light emitting region of the light emitting element in a lamination direction of layers. The second line intersects the first line outside of the light emitting region and overlaps a non-light emitting region of the light emitting element. ## Claims ### Claim 1 An organic EL display device comprising a display panel including: a semiconductor layer comprising a channel portion of a transistor, a first terminal portion of the transistor, and a second terminal portion of the transistor; a first conductive layer comprising a control terminal portion of the transistor; a second conductive layer comprising data signal wiring, a first conductive portion, and a second conductive portion; a third conductive layer comprising a third conductive portion and a fourth conductive portion; a fourth conductive layer comprising an anode electrode of an organic EL element; and a fifth conductive layer comprising a cathode electrode of the organic EL element, wherein, the transistor is configured to connect the third conductive portion to the organic EL element in a conductive state, the organic EL element is above the first conductive layer, the second conductive layer, and the third conductive layer, the first terminal portion of the transistor is connected to the first conductive portion, the second terminal portion of the transistor is connected to the second conductive portion, the first conductive portion is connected to the third conductive portion, the second conductive portion is connected to the fourth conductive portion, the anode electrode is connected to the fourth conductive portion, the data signal wiring extends along a first direction, the third conductive portion extents along a second direction that differs from the first direction, the data signal wiring or the third conductive portion overlaps with a light emission region of the organic EL element, and the data signal wiring crosses the third conductive portion outside of the light emission region of the organic EL element. ### Claim 2 (depends on 1) The organic EL display device according to claim 1, wherein the semiconductor layer is made of a semiconductor material, wherein the first conductive layer is made of a first material including molybdenum, and wherein the second conductive layer is made of a second material including aluminum. ### Claim 3 (depends on 2) The organic EL display device according to claim 2, wherein the third conductive layer is made of a third material including silver. ### Claim 4 (depends on 1) The organic EL display device according to claim 1, wherein the third conductive portion is configured to supply a voltage for non-emission period of the organic EL element. ### Claim 5 (depends on 1) The organic EL display device according to claim 1, wherein the semiconductor layer is above the first conductor layer. ### Claim 6 (depends on 1) The organic EL display device according to claim 1, wherein the second conductor layer is in a layer that is above the first conductor layer. ### Claim 7 (depends on 1) The organic EL display device according to claim 1, wherein the third conductor layer is in a layer that is above the second conductor layer. ### Claim 8 (depends on 1) The organic EL display device according to claim 1, wherein the light emission region of the organic EL element overlaps with the transistor in a plan view. ### Claim 9 (depends on 1) The organic EL display device according to claim 1, wherein the display panel further includes another transistor configured to supply a data voltage from the data signal wiring to a capacitor. ### Claim 10 (depends on 1) The organic EL display device according to claim 1, wherein the display panel is a top emission type display panel. ### Claim 11 An organic EL display device comprising a display panel including: a semiconductor layer comprising a channel portion of a transistor, a first terminal portion of the transistor, and a second terminal portion of the transistor; a first conductive layer comprising a control terminal portion of the transistor; a second conductive layer comprising data signal wiring, a first conductive portion, and a second conductive portion; a third conductive layer comprising a third conductive portion; a fourth conductive layer comprising an anode electrode of an organic EL element; and a fifth conductive layer comprising a cathode electrode of the organic EL element, wherein, the transistor is configured to connect the third conductive portion to the organic EL element in a conductive state, the organic EL element is above the first conductive layer, the second conductive layer, and the third conductive layer, the first terminal portion of the transistor is connected to the first conductive portion, the second terminal portion of the transistor is connected to the second conductive portion, the first conductive portion is connected to the third conductive portion, the data signal wiring extends along a first direction, the third conductive portion extents along a second direction that differs from the first direction, the data signal wiring or the third conductive portion overlaps with a light emission region of the organic EL element, and the data signal wiring crosses the third conductive portion outside of the light emission region of the organic EL element. ### Claim 12 (depends on 11) The organic EL display device according to claim 11, wherein the semiconductor layer is made of a semiconductor material, wherein the first conductive layer is made of a first material including molybdenum, and wherein the second conductive layer is made of a second material including aluminum. ### Claim 13 (depends on 12) The organic EL display device according to claim 12, wherein the third conductive layer is made of a third material including silver. ### Claim 14 (depends on 11) The organic EL display device according to claim 11, wherein the third conductive portion is configured to supply a voltage for non-emission period of the organic EL element. ### Claim 15 (depends on 11) The organic EL display device according to claim 11, wherein the semiconductor layer is above the first conductor layer. ### Claim 16 (depends on 11) The organic EL display device according to claim 11, wherein the second conductor layer is a layer that is above the first conductor layer. ### Claim 17 (depends on 11) The organic EL display device according to claim 11, wherein the third conductor layer is a layer that is above the second conductor layer. ### Claim 18 (depends on 11) The organic EL display device according to claim 11, wherein the light emission region of the organic EL element overlaps the transistor in a plan view. ### Claim 19 (depends on 11) The organic EL display device according to claim 11, wherein the display panel further includes another transistor configured to supply a data voltage from the data signal wiring to a capacitor. ### Claim 20 (depends on 11) The organic EL display device according to claim 11, wherein the display panel is a top emission type display panel. ### Claim 21 An organic EL display device comprising a display panel including: a semiconductor layer comprising a channel portion of a transistor, a first terminal portion of the transistor, and a second terminal portion of the transistor; a first conductive layer comprising a control terminal portion of the transistor; a second conductive layer comprising data signal wiring, a first conductive portion, and a second conductive portion; a third conductive layer comprising a third conductive portion; a fourth conductive layer comprising an anode electrode of an organic EL element; and a fifth conductive layer comprising a cathode electrode of the organic EL element, wherein, the first conductive portion and the third conductive portion form a multilayer interconnection structure, the multilayer interconnection structure is configured to supply a driving current from the transistor to the organic EL element according to a data voltage applied through the data signal wiring, the organic EL element is above the first conductive layer, the second conductive layer, and the third conductive layer, the first terminal portion of the transistor is connected to the first conductive portion, the second terminal portion of the transistor is connected to the second conductive portion, the first conductive portion is connected to the third conductive portion, the data signal wiring extends along a first direction, the third conductive portion extents along a second direction that differs from the first direction, the data signal wiring or the third conductive portion overlaps with a light emission region of the organic EL element, and the data signal wiring crosses the third conductive portion outside of the light emission region of the organic EL element. ### Claim 22 (depends on 21) The organic EL display device according to claim 21, wherein the semiconductor layer is made of a semiconductor material, wherein the first conductive layer is made of a first material including molybdenum, and wherein the second conductive layer is made of a second material including aluminum. ### Claim 23 (depends on 22) The organic EL display device according to claim 22, wherein the third conductive layer is made of a third material including silver. ### Claim 24 (depends on 21) The organic EL display device according to claim 21, wherein the third conductive portion is configured to supply a voltage for non-emission period of the organic EL element. ### Claim 25 (depends on 21) The organic EL display device according to claim 21, wherein the semiconductor layer is above the first conductor layer. ### Claim 26 (depends on 21) The organic EL display device according to claim 21, wherein the second conductor layer is a layer that is above the first conductor layer. ### Claim 27 (depends on 21) The organic EL display device according to claim 21, wherein the third conductor layer is a layer that is above the second conductor layer. ### Claim 28 (depends on 21) The organic EL display device according to claim 21, wherein the light emission region of the organic EL element overlaps the transistor in a plan view. ### Claim 29 (depends on 21) The organic EL display device according to claim 21, wherein the display panel further including another transistor configured to supply the data voltage from the data signal wiring to a capacitor. ### Claim 30 (depends on 21) The organic EL display device according to claim 21, wherein the display panel is a top emission type display panel.