# US 10,121,830 B1 · OLED display panel and manufacturing method thereof

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- Number: US 10,121,830 B1
- Document ID: US10121830B1
- Status: Granted
- Kind: B1
- Application number: 15/569,776
- Filed: 2017-08-16
- Granted: 2018-11-06
- Earliest claimed: 2017-06-16
- Assignees: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicants: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Inventors: Songshan Li
- Web page: https://patentgrep.com/patent/US10121830B1

## CPC

- H10D 30/6723: {having light shields}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/021: {of multiple TFTs}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10K 59/1201: {Manufacture or treatment}
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K 59/126: Shielding, e.g. light-blocking means over the TFTs
- H10K 59/38: comprising colour filters or colour changing media [CCM]
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K 2102/103: {comprising indium oxides, e.g. ITO}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The invention provides an OLED display panel and manufacturing method thereof, by disposing a red shielding color-resist block on the IGZO TFT to completely cover the active layer, able to reduce the influence of the high energy blue light incident from the top of the IGZO TFT on the active layer so as to prevent the leakage current and to ensure the TFT characteristics to maintain normal operation of the IGZO TFT. Moreover, the red shielding color-resist block covering the active layer only blocks the high-energy blue light influencing the active layer of the IGZO TFT while allows light of other bands to pass through; thus, the aperture ratio of the OLED display panel is not affected.

## Claims

### Claim 1

An organic light-emitting diode (OLED) display panel, comprising: a base substrate, a shielding metal block disposed on the base substrate, a buffer layer disposed on the shielding metal block and the base substrate, an active layer disposed on the buffer layer and correspondingly above the shielding metal block, a gate insulating layer disposed on the active layer, a gate disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate, active layer and buffer layer, a first via and a second via disposed on the interlayer insulating layer and correspondingly above two sides of the active layer, a source and a drain disposed in the interlayer insulating layer and respectively contacting the two sides of the active layer through the first via and the second via, a passivation layer disposed on the source, drain and interlayer insulating layer, a red shielding color-resist block disposed on the passivation layer and completely covering the active layer, a planarization layer disposed on the red shielding color-resist block and passivation layer, a third via disposed on the passivation layer and correspondingly above the drain, a first electrode disposed on the planarization layer and passivation layer and contacting the drain through the third via, a pixel definition layer disposed on the first electrode and the passivation layer, a fourth via disposed on the pixel definition layer and correspondingly above the first electrode, and an OLED light-emitting layer and a second electrode disposed inside the fourth via from the bottom up;
the first electrode, OLED light-emitting layer and the second electrode forming an OLED element; and the active layer being made of IGZO material.

### Claim 2 (depends on 1)

The OLED display panel as claimed in claim 1, wherein the red shielding color-resist block disposed correspondingly above the active layer extends beyond edges of the active layer by 2-5 μm so as to completely cover the active layer.

### Claim 3 (depends on 1)

The OLED display panel as claimed in claim 1, wherein the OLED element is a bottom-emission OLED element.

### Claim 4 (depends on 3)

The OLED display panel as claimed in claim 3, wherein the OLED display panel further comprises a color filtering layer disposed on the passivation layer and at same level as the red shielding color-resist block;
the OLED element is a white OLED element emitting white light.

### Claim 5 (depends on 1)

The OLED display panel as claimed in claim 1, wherein the gate, the source and the drain are made of one or more of the materials of molybdenum, aluminum, copper, titanium, and chromium; the buffer layer, the gate insulating layer, the interlayer insulating layer and the passivation layer are made of one or more of the materials of silicon oxide and silicon nitride; the first electrode is made of a transparent conductive metal oxide material.

### Claim 6

A manufacturing method of organic light-emitting diode (OLED) display panel, comprising the steps of:
Step S1: providing a base substrate, depositing and patternizing to form a shielding metal block on the base substrate, depositing a buffer layer on the shielding metal block and the base substrate, depositing and patternizing to form an active layer on the buffer layer corresponding to above of the shielding metal block, depositing inorganic material film and a first metal layer sequentially on the active layer and the buffer layer, patternizing the inorganic material film and the first metal layer to obtain a gate insulating layer above the active layer from the inorganic material film and a gate above the gate insulating layer from the first metal layer, the gate insulating layer exposing two sides of the active layer;
the active layer being made of IGZO material;
Step S2: depositing an interlayer insulation layer on the gate, the active layer and the buffer layer, forming a first via and a second via on the interlayer insulating layer corresponding to the two sides of the active layer, depositing a second metal layer on the interlayer insulating layer, patternizing the second metal layer to obtain a source and a drain respectively contacting the two sides of the active layer through the first via and the second via;
Step S3: depositing a passivation layer on the source, the drain and the interlayer insulating layer, patternizing the passivation layer above the active layer to form a red shielding color-resist block completely covering the active layer;
Step S4: forming a planarization layer on the red shielding color-resist block and passivation layer, forming a third via on the passivation layer corresponding to above the drain, forming a first electrode on the planarization layer and the passivation layer, the first electrode contacting the drain through the third via, forming a pixel definition layer on the first electrode and the passivation layer, forming a fourth via on the pixel definition layer corresponding to above the first electrode, forming an OLED light-emitting layer and a second electrode sequentially from bottom up inside the fourth via;
the first electrode, the OLED light-emitting layer and the second electrode forming an OLED element.

### Claim 7 (depends on 6)

The manufacturing method of OLED display panel as claimed in claim 6, wherein in Step S3, the red shielding color-resist block formed correspondingly above the active layer extends beyond edges of the active layer by 2-5 μm so as to completely cover the active layer.

### Claim 8 (depends on 6)

The manufacturing method of OLED display panel as claimed in claim 6, wherein the OLED element is a bottom-emission OLED element.

### Claim 9 (depends on 8)

The manufacturing method of OLED display panel as claimed in claim 8, wherein the OLED element is a white OLED element emitting white light, and
Step S3 further comprises: forming a color filtering layer on the passivation layer and at same level as the red shielding color-resist block.

### Claim 10 (depends on 6)

The manufacturing method of OLED display panel as claimed in claim 6, wherein the shielding metal block, the active layer, the gate, the source, the drain, and the first electrode are deposited by a physical vapor deposition method; the buffer layer, the gate insulating layer, the interlayer insulating layer and the passivation layer are deposited by plasma enhanced chemical vapor deposition;
the gate, the source and the drain are made of one or more of the materials of molybdenum, aluminum, copper, titanium, and chromium; the buffer layer, the gate insulating layer, the interlayer insulating layer and the passivation layer are made of one or more of the materials of silicon oxide and silicon nitride; the first electrode is made of a transparent conductive metal oxide material;
Step S1 further comprises: using the gate and the gate insulating layer as a shielding layer to perform a plasma treatment on the active layer to become a conductor;
in Step S1, the specific process for patternizing the inorganic material film and the first metal layer comprises: performing wet etching on the first metal layer to obtain a gate corresponding to above the active layer, and then performing dry etching on inorganic material film with the gate as a shielding layer to obtain a gate insulating layer having the same shape as the gate.

### Claim 11

An organic light-emitting diode (OLED) display panel, comprising: a base substrate, a shielding metal block disposed on the base substrate, a buffer layer disposed on the shielding metal block and the base substrate, an active layer disposed on the buffer layer and correspondingly above the shielding metal block, a gate insulating layer disposed on the active layer, a gate disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate, active layer and buffer layer, a first via and a second via disposed on the interlayer insulating layer and correspondingly above two sides of the active layer, a source and a drain disposed in the interlayer insulating layer and respectively contacting the two sides of the active layer through the first via and the second via, a passivation layer disposed on the source, drain and interlayer insulating layer, a red shielding color-resist block disposed on the passivation layer and completely covering the active layer, a planarization layer disposed on the red shielding color-resist block and passivation layer, a third via disposed on the passivation layer and correspondingly above the drain, a first electrode disposed on the planarization layer and passivation layer and contacting the drain through the third via, a pixel definition layer disposed on the first electrode and the passivation layer, a fourth via disposed on the pixel definition layer and correspondingly above the first electrode, and an OLED light-emitting layer and a second electrode disposed inside the fourth via from the bottom up;
the first electrode, OLED light-emitting layer and the second electrode forming an OLED element; and the active layer being made of IGZO material;
wherein the red shielding color-resist block disposed correspondingly above the active layer extending beyond edges of the active layer by 2-5 μm so as to completely cover the active layer;
wherein the OLED element being a bottom-emission OLED element;
wherein the OLED display panel further comprising a color filtering layer disposed on the passivation layer and at same level as the red shielding color-resist block;
the OLED element being a white OLED element emitting white light;
wherein the gate, the source and the drain being made of one or more of the materials of molybdenum, aluminum, copper, titanium, and chromium; the buffer layer, the gate insulating layer, the interlayer insulating layer and the passivation layer being made of one or more of the materials of silicon oxide and silicon nitride; the first electrode being made of a transparent conductive metal oxide material.