# US 10,121,822 B2 · Light-emitting device and method of forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,822 B2 - Document ID: US10121822B2 - Status: Granted - Kind: B2 - Application number: 15/100,748 - Filed: 2014-11-18 - Published: 2016-10-20 - Granted: 2018-11-06 - Earliest claimed: 2013-12-02 - Assignees: Nanyang Technological University - Applicants: Nanyang Technological University - Inventors: Xueliang Zhang; Zi-Hui Zhang; Yun Ji; Zhen Gang Ju; Wei Liu; Swee Tiam Tan; Xiaowei Sun; Hilmi Volkan Demir - Web page: https://patentgrep.com/patent/US10121822B2 ## CPC - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/831: characterised by their shape - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/032: {of electrodes} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer. ## Claims ### Claim 1 A light-emitting device comprising: an active layer; a first semiconductor layer of a first conductivity type, the first semiconductor layer in physical contact with the active layer; a second semiconductor layer of a second conductivity type, the second semiconductor layer in physical contact with the active layer and opposite the first semiconductor layer; a first electrode in physical contact with a first lateral side of the first semiconductor layer; a second electrode in physical contact with a second lateral side of the first semiconductor layer, the second lateral side of the first semiconductor layer being different from the first lateral side of the first semiconductor layer; and a third electrode in physical contact with the second semiconductor layer, wherein the first electrode and the second electrode are physically isolated from a surface side of the first semiconductor layer joining the first lateral side and the second lateral side, the surface side being configured to transmit light generated by the light-emitting device. ### Claim 2 (depends on 1) The light-emitting device according to claim 1, wherein the first electrode is in physical contact with the second. ### Claim 3 (depends on 1) The light-emitting device according to claim 1, wherein the second lateral side of the first semiconductor layer is opposite the first lateral side of the first semiconductor layer. ### Claim 4 (depends on 1) The light-emitting device according to any of claim 1, further comprising: a passivation layer separating the second electrode from the active layer, the second semiconductor layer and the third electrode. ### Claim 5 (depends on 4) The light-emitting device according to claim 4, wherein the passivation layer comprises one or more passivation structures. ### Claim 6 (depends on 4) The light-emitting device according to claim 4, wherein the passivation layer comprises an insulating inorganic material selected from a group consisting of silicon oxide, silicon nitride, titanium dioxide, aluminum oxide, magnesium oxide, hafnium oxide and tantalum oxide. ### Claim 7 (depends on 4) The light-emitting device according to claim 4, wherein the passivation layer comprises a suitable organic material. ### Claim 8 (depends on 4) The light-emitting device according to claim 4, wherein the passivation layer comprises one or more via holes. ### Claim 9 (depends on 8) The light-emitting device according to claim 8, wherein each of the one or more via holes of the passivation layer comprises a via interconnect electrically connected to the third electrode. ### Claim 10 (depends on 9) The light-emitting device according to claim 9 further comprising: a connection layer in contact with the via interconnect. ### Claim 11 (depends on 9) The light-emitting device according to claim 9, further comprising: an isolation layer for separating the second electrode from the via interconnect. ### Claim 12 (depends on 1) The light-emitting device according to claim 1, wherein a portion of the first semiconductor layer directly over the active region is configured to transmit light. ### Claim 13 (depends on 12) The light-emitting device according to claim 12, wherein the portion of the first semiconductor layer directly over the active region is unblocked by the first electrode. ### Claim 14 (depends on 12) The light-emitting device according to claim 12, wherein the portion of the first semiconductor layer directly over the active region is patterned. ### Claim 15 (depends on 12) The light-emitting device according to claim 12, further comprising: a protection layer in contact with the portion of the first semiconductor layer directly over the active region. ### Claim 16 (depends on 1) The light-emitting device according to claim 1, wherein the third electrode comprises: a transparent conducting layer in contact with the second semiconductor layer; a reflective layer in contact with the transparent conducting layer; and a conductive supporting layer in contact with the reflective layer. ### Claim 17 A light-emitting array comprising: a plurality of light-emitting devices, each light-emitting device comprising: an active layer; a first semiconductor layer of a first conductivity type, the first semiconductor layer in physical contact with the active layer; a second semiconductor layer of a second conductivity type, the second semiconductor layer in physical contact with the active layer and opposite the first semiconductor layer; a first electrode in physical contact with a first lateral side of the first semiconductor layer, a second electrode in physical contact with a second lateral side of the first semiconductor layer, the second lateral side of the first semiconductor layer being different from the first lateral side of the first semiconductor layer; and a third electrode in physical contact with the second semiconductor layer; and one or more interconnecting layers, wherein: the first electrode and the second electrode are physically isolated from a surface side of the first semiconductor layer joining the first lateral side and the second lateral side, the surface side being configured to transmit light generated by the light-emitting device; and each of the one or more interconnecting layers is in contact with a first light-emitting device and a second light-emitting device of the plurality of light-emitting devices. ### Claim 18 A method of forming a light-emitting device, the method comprising: forming an active layer; forming a first semiconductor layer of a first conductivity type so that the first semiconductor layer is in physical contact with the active layer; forming a second semiconductor layer of a second conductivity type so that the second semiconductor layer is in physical contact with the active layer and opposite the first semiconductor layer; forming a first electrode in physical contact with a first lateral side of the first semiconductor layer; forming a second electrode in physical contact with a second lateral side of the first semiconductor layer, the second lateral side of the first semiconductor layer being different from the first lateral side of the first semiconductor layer; and forming a third electrode so that the third electrode is in physical contact with the second semiconductor layer, thereby forming the light-emitting device, wherein the first electrode and the second electrode are physically isolated from a surface side of the first semiconductor layer joining the first lateral side and the second lateral side, the surface side being configured to transmit light generated by the light-emitting device. ### Claim 19 A method of forming a light-emitting array, the method comprising: forming a plurality of light-emitting devices, wherein the forming of each light-emitting device comprises: forming an active layer; forming a first semiconductor layer of a first conductivity type so that the first semiconductor layer is in physical contact with the active layer; forming a second semiconductor layer of a second conductivity type so that the second semiconductor layer is in physical contact with the active layer and opposite the first semiconductor layer; forming a first electrode in physical contact with a first lateral side of the first semiconductor layer; forming a second electrode in physical contact with a lateral second side of the first semiconductor layer, the second lateral side of the first semiconductor layer being different from the first lateral side of the first semiconductor layer; and forming a third electrode so that the third electrode is in physical contact with the second semiconductor layer, thereby forming the light-emitting device; and forming one or more interconnecting layers so that each of the one or more interconnecting layers is in contact with a first light-emitting device and a second light-emitting device of the plurality of light-emitting devices, wherein the first electrode and the second electrode are physically isolated from a surface side of the first semiconductor layer joining the first lateral side and the second lateral side, the surface side being configured to transmit light generated by the light-emitting device.