# US 10,121,810 B2 · Imaging apparatus and electronic apparatus including shielding members between photoelectric conversion regions > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,810 B2 - Document ID: US10121810B2 - Status: Granted - Kind: B2 - Application number: 15/426,467 - Filed: 2017-02-07 - Published: 2017-05-25 - Granted: 2018-11-06 - Earliest claimed: 2013-03-27 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yusuke Tanaka - Web page: https://patentgrep.com/patent/US10121810B2 ## CPC - H10F 39/807: {Pixel isolation structures} - H10F 39/014: {of CMOS image sensors} - H10F 39/024: {of coatings or optical elements} - H10F 39/026: {Wafer-level processing} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/182: {Colour image sensors} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate, element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, and shielding members formed on upper surfaces of the element isolation regions. The element isolation regions have high impurity concentration regions of a high impurity concentration connected to at least a part of the shielding members. ## Claims ### Claim 1 An imaging apparatus comprising: a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate; element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, the element isolation regions including high impurity concentration semiconductor regions having a higher impurity concentration than other semiconductor regions within the element isolation regions; and shielding members formed between the plurality of photoelectric conversion regions in a cross-sectional view, wherein at least one of the shielding members is disposed over the rear surface side corresponding to the high impurity concentration semiconductor regions in the cross-sectional view, and wherein the high impurity concentration semiconductor regions of the element isolation regions are at least one of directly connected to at least a part of the shielding members or indirectly connected to at least the part of the shielding members via a conductive material different from a material of the shielding members. ### Claim 2 (depends on 1) The imaging apparatus according to claim 1, wherein the high impurity concentration semiconductor regions of the element isolation regions are present only in a surrounding part of the photoelectric conversion regions which photoelectrically convert red light. ### Claim 3 (depends on 1) The imaging apparatus according to claim 1, wherein each of the element isolation regions between the plurality of photoelectric conversion regions has one of the high impurity concentration semiconductor regions, and wherein the high impurity concentration semiconductor regions are directly connected to the shielding members on upper surfaces of the high impurity concentration semiconductor regions. ### Claim 4 (depends on 3) The imaging apparatus according to claim 3, wherein a predetermined voltage is supplied to the shielding members, via a through electrode, from a peripheral circuit arranged surrounding a pixel array which includes the plurality of photoelectric conversion regions and the element isolation regions. ### Claim 5 (depends on 1) The imaging apparatus according to claim 1, wherein a predetermined voltage is supplied to the shielding members from a peripheral circuit arranged surrounding a pixel array which includes the plurality of photoelectric conversion regions and the element isolation regions. ### Claim 6 (depends on 1) The imaging apparatus according to claim 1, wherein the high impurity concentration semiconductor regions of the element isolation regions are formed at positions separated from interfaces of the element isolation regions on the rear surface side of the semiconductor substrate, and wherein the shielding members are embedded inside the element isolation regions. ### Claim 7 (depends on 1) The imaging apparatus according to claim 1, wherein the other semiconductor regions within the element isolation regions at least partially surround the high impurity concentration semiconductor regions. ### Claim 8 An electronic apparatus, comprising: an imaging apparatus including: a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate; element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, the element isolation regions including high impurity concentration semiconductor regions having a higher impurity concentration than other semiconductor regions within the element isolation regions; and shielding members formed between the plurality of photoelectric conversion regions in a cross-sectional view, wherein at least one of the shielding members is disposed over the rear surface side corresponding to the high impurity concentration semiconductor regions in the cross-sectional view, and wherein the high impurity concentration semiconductor regions of the element isolation regions are at least one of directly connected to at least a part of the shielding members or indirectly connected to at least the part of the shielding members via a conductive material different from a material of the shielding members. ### Claim 9 (depends on 8) The electronic apparatus according to claim 8, wherein the high impurity concentration semiconductor regions of the element isolation regions are present only in a surrounding part of the photoelectric conversion regions which photoelectrically convert red light. ### Claim 10 (depends on 8) The electronic apparatus according to claim 8, wherein each of the element isolation regions between the plurality of photoelectric conversion regions has one of the high impurity concentration semiconductor regions, and wherein the high impurity concentration semiconductor regions are directly connected to the shielding members on upper surfaces of the high impurity concentration semiconductor regions. ### Claim 11 (depends on 10) The electronic apparatus according to claim 10, wherein a predetermined voltage is supplied to the shielding members, via a through electrode, from a peripheral circuit arranged surrounding a pixel array which includes the plurality of photoelectric conversion regions and the element isolation regions. ### Claim 12 (depends on 8) The electronic apparatus according to claim 8, wherein a predetermined voltage is supplied to the shielding members from a peripheral circuit arranged surrounding a pixel array which includes the plurality of photoelectric conversion regions and the element isolation regions. ### Claim 13 (depends on 8) The electronic apparatus according to claim 8, wherein the high impurity concentration semiconductor regions of the element isolation regions are formed at positions separated from interfaces of the element isolation regions on the rear surface side of the semiconductor substrate, and wherein the shielding members are embedded inside the element isolation regions. ### Claim 14 (depends on 8) The electronic apparatus according to claim 8, wherein the other semiconductor regions within the other semiconductor regions at least partially surround the high impurity concentration semiconductor regions.