# US 10,121,803 B2 · Semiconductor device having auxiliary patterns

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- Number: US 10,121,803 B2
- Document ID: US10121803B2
- Status: Granted
- Kind: B2
- Application number: 15/600,330
- Filed: 2017-05-19
- Published: 2017-09-07
- Granted: 2018-11-06
- Earliest claimed: 2012-05-07
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Chang-Soo Pyon; Min-Ho Ko; Hyun-Chol Bang; Kwang-Min Kim; Won-Kyu Kwak
- Web page: https://patentgrep.com/patent/US10121803B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 1/68: Capacitors having no potential barriers
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10W 20/496: {Capacitor integral with wiring layers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a substrate, a first conductive layer on the substrate and including a main pattern, and substantially symmetrical auxiliary patterns extending from two sides of the main pattern, an insulating layer on the substrate and the first conductive layer, and a second conductive layer on the insulating layer and overlapping at least a portion of the main pattern and the auxiliary patterns.

## Claims

### Claim 1

A semiconductor device comprising:
a substrate;
a first conductive layer on the substrate and comprising:
a main pattern;
substantially symmetrical first auxiliary patterns extending from two sides of the main pattern and electrically connected to the main pattern; and
substantially symmetrical second auxiliary patterns extending from two other sides of the main pattern;
an insulating layer on the substrate and the first conductive layer; and
a second conductive layer on the insulating layer and overlapping the main pattern and at least a portion of the first auxiliary patterns and the second auxiliary patterns,
wherein one of the first auxiliary patterns is coupled to a wiring and another of the first auxiliary patterns has an isolated terminal end.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein at least one of the first conductive layer and the second conductive layer comprises a semiconductor layer.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein at least one of the first conductive layer and the second conductive layer comprises a metal layer.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the semiconductor device comprises a thin film transistor.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the semiconductor device comprises a capacitor.

### Claim 6

A semiconductor device comprising:
a substrate;
a first conductive layer on the substrate and comprising:
a main pattern;
substantially symmetrical first auxiliary patterns extending from two sides of the main pattern and electrically connected to the main pattern; and
substantially symmetrical second auxiliary patterns extending from two other sides of the main pattern;
an insulating layer on the substrate and the first conductive layer such that the first conductive layer is between the substrate and the insulating layer; and
a second conductive layer on the insulating layer and overlapping the main pattern and at least a portion of the first auxiliary patterns and the second auxiliary patterns,
wherein at least one of the first auxiliary patterns extending from one of the two sides of the main pattern and at least one of the second auxiliary patterns extending from one of the two other sides of the main pattern extends beyond an edge of the second conductive layer.