# US 10,121,788 B1 · Fin-type field effect transistors with single-diffusion breaks and method

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- Number: US 10,121,788 B1
- Document ID: US10121788B1
- Status: Granted
- Kind: B1
- Application number: 15/873,006
- Filed: 2018-01-17
- Published: 2018-11-08
- Granted: 2018-11-06
- Earliest claimed: 2017-05-08
- Assignees: Globalfoundries Inc.
- Applicants: Globalfoundries Inc.
- Inventors: Haiting Wang; Wei Zhao; Hong Yu; Xusheng Wu; Hui Zang; Zhenyu Hu
- Web page: https://patentgrep.com/patent/US10121788B1

## CPC

- H10D 84/834: {comprising FinFETs}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 84/013: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0147: {Manufacturing their gate sidewall spacers}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/8316: {the IGFETs characterised by having gate sidewall spacers specially adapted for integration}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 50/283: {by chemical means}
- H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
- H10W 10/011: {of isolation regions comprising dielectric materials}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/10: Isolation regions comprising dielectric materials
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed is a semiconductor structure, including at least one fin-type field effect transistor and at least one single-diffusion break (SDB) type isolation region, and a method of forming the semiconductor structure. In the method, an isolation bump is formed above an isolation region within a semiconductor fin and sidewall spacers are formed on the bump. During an etch process to reduce the height of the bump and to remove isolation material from the sidewalls of the fin, the sidewall spacers prevent lateral etching of the bump. During an etch process to form source/drain recesses in the fin, the sidewalls spacers protect the semiconductor material adjacent to the isolation region. Consequently, the sides and bottom of each recess include semiconductor surfaces and the angle of the top surfaces of the epitaxial source/drain regions formed therein is minimized, thereby minimizing the risk of unlanded source/drain contacts.

## Claims

### Claim 1

A semiconductor structure comprising:
a semiconductor fin having a first top surface and first opposing sides;
an isolation region in the semiconductor fin, the isolation region having a second top surface that is substantially co-planar with the first top surface of the semiconductor fin and further having second opposing sides;
an isolation bump on the second top surface of the isolation region and having a third top surface;
a bump sidewall spacer positioned laterally adjacent to the isolation bump and having at least an outer portion above and immediately adjacent to the first top surface of the semiconductor fin;
a non-functional gate structure above and immediately adjacent to the third top surface of the isolation bump;
a transistor comprising:
a channel region within the semiconductor fin;
a functional gate structure adjacent to the first top surface and the first opposing sides of the semiconductor fin at the channel region; and
a source/drain region in the semiconductor fin between the channel region and the isolation region, the source/drain region having a first side adjacent to the channel region and a second side opposite the first side and physically separated from the isolation region; and
gate sidewall spacers positioned laterally adjacent to the non-functional gate structure and the functional gate structure, wherein a gate sidewall spacer positioned laterally adjacent to the non-functional gate is above and immediately adjacent to the third top surface of the isolation bump and further extends laterally onto the bump sidewall spacer.

### Claim 2 (depends on 1)

The semiconductor structure of claim 1, wherein the bump sidewall spacer and the isolation bump comprise different materials.

### Claim 3 (depends on 1)

The semiconductor structure of claim 1, wherein the bump sidewall spacer comprises silicon nitride and the isolation bump comprises any of silicon dioxide and silicon oxycarbide.

### Claim 4 (depends on 1)

The semiconductor structure of claim 1, wherein the isolation bump and the isolation region have approximately equal widths.

### Claim 5 (depends on 1)

The semiconductor structure of claim 1, wherein the isolation region and the isolation bump comprise different isolation materials.

### Claim 6 (depends on 1)

The semiconductor structure of claim 1, wherein the isolation region comprises silicon dioxide and the isolation bump comprises silicon oxycarbide.

### Claim 7 (depends on 1)

The semiconductor structure of claim 1, the source/drain region comprises:
a source/drain recess in the semiconductor fin between the channel region and the isolation region; and
an epitaxial semiconductor layer in the source/drain recess.

### Claim 8 (depends on 7)

The semiconductor structure of claim 7, wherein the semiconductor fin and the epitaxial semiconductor layer comprise different semiconductor materials.

### Claim 9 (depends on 7)

The semiconductor structure of claim 7, wherein the semiconductor fin comprises silicon and the epitaxial semiconductor layer comprises silicon germanium.

### Claim 10

A semiconductor structure comprising:
a semiconductor fin having a first top surface and first opposing sides;
isolation regions in the semiconductor fin and having second top surfaces that are substantially co-planar with the first top surface of the semiconductor fin and further having second opposing sides;
isolation bumps on the isolation regions, respectively, and having third top surfaces;
bump sidewall spacers positioned laterally adjacent to the isolation bumps and having at least outer portions above and immediately adjacent to the first top surface of the semiconductor fin;
non-functional gate structures being above and immediately adjacent to the third top surfaces of the isolation bumps;
a transistor between the isolation regions and comprising:
source/drain regions in the semiconductor fin;
a channel region within the semiconductor fin and positioned laterally between the source/drain regions such that each source/drain region has a first side adjacent to the channel region and a second side opposite the first side so as to be adjacent to but physically separated from one of the isolation regions; and
a functional gate structure adjacent to the first top surface and the first opposing sides of the semiconductor fin at the channel region;
gate sidewall spacers positioned laterally adjacent to the non-functional gate structures and the functional gate structure, wherein any of the gate sidewall spacers that are positioned laterally adjacent to the non-functional gate structures are above and immediately adjacent to the third top surfaces of the isolation bumps and further extend laterally onto the bump sidewall spacers; and
a dielectric layer adjacent to the first opposing sides of the semiconductor fin at the source/drain regions and the second opposing sides of the isolation regions, wherein the isolation bumps extends laterally beyond the second opposing sides of the isolation regions onto the dielectric layer.

### Claim 11 (depends on 10)

The semiconductor structure of claim 10, wherein the bump sidewall spacers and the isolation bumps comprise different materials.

### Claim 12 (depends on 10)

The semiconductor structure of claim 10, wherein the bump sidewall spacers comprise silicon nitride and the isolation bumps comprise any of silicon dioxide and silicon oxycarbide.

### Claim 13 (depends on 10)

The semiconductor structure of claim 10, wherein the isolation bumps and the isolation regions have approximately equal widths.

### Claim 14 (depends on 10)

The semiconductor structure of claim 10, wherein the isolation regions and the isolation bumps comprise different isolation materials.

### Claim 15 (depends on 10)

The semiconductor structure of claim 10, wherein the isolation regions comprise silicon dioxide and the isolation bumps comprise silicon oxycarbide.

### Claim 16 (depends on 10)

The semiconductor structure of claim 10, each source/drain region comprises:
a source/drain recess in the semiconductor fin; and
an epitaxial semiconductor layer in the source/drain recess.

### Claim 17 (depends on 16)

The semiconductor structure of claim 16, wherein the semiconductor fin and the epitaxial semiconductor layer comprise different semiconductor materials.

### Claim 18 (depends on 16)

The semiconductor structure of claim 16, wherein the semiconductor fin comprises silicon and the epitaxial semiconductor layer comprises silicon germanium.

### Claim 19

A semiconductor structure comprising:
a semiconductor fin having a first top surface and first opposing sides;
isolation regions in the semiconductor fin and having second top surfaces that are substantially co-planar with the first top surface of the semiconductor fin and further having second opposing sides;
isolation bumps on the isolation regions, respectively, and having third top surfaces;
bump sidewall spacers positioned laterally adjacent to the isolation bumps and having at least outer portions above and immediately adjacent to the first top surface of the semiconductor fin, wherein the bump sidewall spacers have fourth top surfaces that are at or below a level of the third top surfaces;
non-functional gate structures being above and immediately adjacent to the third top surfaces of the isolation bumps;
a transistor comprising:
source/drain regions in the semiconductor fin;
a channel region within the semiconductor fin and positioned laterally between the source/drain regions such that each source/drain region has a first side and a second side opposite the first side, the first side being adjacent to the channel region and the second side being adjacent to but physically separated from one of the isolation regions and further below one of the bump sidewall spacers; and
a functional gate structure adjacent to the first top surface and the first opposing sides of the semiconductor fin at the channel region, wherein the functional gate structure and the non-functional gate structure comprise replacement metal gate structures;
gate sidewall spacers positioned laterally adjacent to the non-functional gate structures and the functional gate structure, wherein any of the gate sidewall spacers that are positioned laterally adjacent to the non-functional gate structures are above and immediately adjacent to the third top surfaces of the isolation bumps and further extend laterally onto the bump sidewall spacers; and
a dielectric layer adjacent to the first opposing sides of the semiconductor fin at the source/drain regions and the second opposing sides of the isolation regions, wherein the isolation bumps extends laterally beyond the second opposing sides of the isolation regions and onto the dielectric layer and wherein the non-functional gate structures and the functional gate structure have substantially co-planar top surfaces such that a first height of the non-functional gate structures as measured from the third top surfaces of the isolation bumps is less than a second height of the functional gate structure as measured from the first top surface of the semiconductor fin.

### Claim 20 (depends on 19)

The semiconductor structure of claim 19, wherein the bump sidewall spacers comprise silicon nitride, the isolation regions comprise silicon dioxide and the isolation bumps comprise silicon oxycarbide.