# US 10,121,770 B2 · Device with multiple, stacked light emitting devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,770 B2 - Document ID: US10121770B2 - Status: Granted - Kind: B2 - Application number: 15/551,381 - Filed: 2016-02-10 - Published: 2018-03-08 - Granted: 2018-11-06 - Earliest claimed: 2015-02-18 - Assignees: Koninklijke Philips N.V. - Applicants: Koninklijke Philips N.V. - Inventors: Hans-Helmut Bechtel; Erik Nelson; April Dawn Schricker - Web page: https://patentgrep.com/patent/US10121770B2 ## CPC - H10W 90/00: Package configurations - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10W 72/536: {the connected ends being ball-shaped} - H10W 72/5363: {the connected ends being wedge-shaped} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 90/732: {between stacked chips} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers. ## Claims ### Claim 1 A device comprising: a first light emitting structure including a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region; a second light emitting structure including a second semiconductor light emitting layer disposed between a second n-type region and a second p-type region; and a non-III-nitride material separating the first and second light emitting structures, the non-III-nitride material comprising an adhesive attaching the first and second light emitting structures; the second semiconductor light emitting layer being disposed over the first semiconductor light emitting layer, wherein the non-III-nitride material separating the first and second light emitting structures comprises a wavelength converting material. ### Claim 2 (depends on 1) The device of claim 1 wherein: the first n-type region, the first light emitting layer, and the first p-type region are grown on a first growth substrate; and the second n-type region, the second light emitting layer, and the second p-type region are grown on a second growth substrate. ### Claim 3 (depends on 2) The device of claim 2 further comprising: a first contact electrically connected to the first n-type region; and a second contact electrically connected to the first p-type region. ### Claim 4 (depends on 3) The device of claim 3 further comprising: a third contact electrically connected to the second n-type region; a fourth contact electrically connected to the second p-type region; a first wire bond connecting the third contact to a mount; and a second wire bond connecting the third contact to the mount. ### Claim 5 (depends on 3) The device of claim 3 further comprising: a first wire bond connecting the first contact to a mount; and a second wire bond connecting the second contact to the mount. ### Claim 6 (depends on 5) The device of claim 5 further comprising: a third contact electrically connected to the second n-type region; a fourth contact electrically connected to the second p-type region; a third wire bond connecting the third contact to the mount; and a fourth wire bond connecting the fourth contact to the mount. ### Claim 7 (depends on 5) The device of claim 5 wherein the non-III-nitride material separating the first and second light emitting structures further comprises a separator, wherein the separator spaces the second light emitting structure apart from the first light emitting structure and protects the first and second wire bonds. ### Claim 8 (depends on 2) The device of claim 2 wherein the non-III-nitride material separating the first and second light emitting structures further comprises a separator, wherein the adhesive comprises: a first adhesive layer attaching the first p-type region to the separator; and a second adhesive layer attaching the second growth substrate to the separator. ### Claim 9 (depends on 1) The device of claim 1 wherein the wavelength converting material is disposed in the adhesive. ### Claim 10 (depends on 1) The device of claim 1 wherein the non-III-nitride material separating the first and second light emitting structures further comprises a separator, wherein the separator is comprised of the wavelength converting material. ### Claim 11 (depends on 8) The device of claim 8 wherein the first growth substrate is attached to a mount. ### Claim 12 A device comprising: a growth substrate made of a non-III-nitride material and having a first surface and a second surface opposite the first surface; a first light emitting structure including a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region, the first semiconductor light emitting layer, the first n-type region, and the first p-type region being grown on the first surface of the growth substrate; and a second light emitting structure including a second semiconductor light emitting layer disposed between a second n-type region and a second p-type region, the second semiconductor light emitting layer, the second n-type region, and the second p-type region being grown on the second surface of the growth substrate. ### Claim 13 (depends on 12) The device of claim 12 wherein the first light emitting device is mounted contact side down on a mount; and the second light emitting device is wire bonded to the mount. ### Claim 14 A method comprising: growing a first semiconductor structure comprising a first light emitting layer sandwiched between a first n-type region and a first p-type region on a first surface of a non-III-nitride growth substrate; and growing a second semiconductor structure comprising a second light emitting layer sandwiched between a second n-type region and a second p-type region on a second surface of the non-III-nitride growth substrate, the second surface being opposite the first surface. ### Claim 15 (depends on 14) The method of claim 14 further comprising: attaching the first semiconductor structure to a mount via a first contact disposed on the first n-type region and a second contact disposed on the first p-type region; forming a first wire bond between the mount and a third contact disposed on the second n-type region; and forming a second wire bond between the mount and a fourth contact disposed on the second p-type region.