# US 10,121,762 B2 · Wafer bonding structure and wafer bonding method

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- Number: US 10,121,762 B2
- Document ID: US10121762B2
- Status: Granted
- Kind: B2
- Application number: 15/825,872
- Filed: 2017-11-29
- Published: 2018-05-31
- Granted: 2018-11-06
- Earliest claimed: 2016-11-30
- Assignees: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation
- Applicants: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation
- Inventors: Fu Cheng Chen
- Web page: https://patentgrep.com/patent/US10121762B2

## CPC

- H10D 88/00: Three-dimensional [3D] integrated devices
- H10P 10/128: {by direct semiconductor to semiconductor bonding}
- H10P 14/6546: {to change the surface groups of the insulating materials}
- H10P 70/277: {the processing being a planarisation of conductive layers}
- H10P 90/1914: {using bonding}
- H10W 72/90: Bond pads, in general
- H10W 72/01338: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/01361: {Chemical or physical modification, e.g. by sintering or anodisation (patterning H10W72/01351)}
- H10W 72/0198: {batch processes}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07331: {Connecting techniques}
- H10W 72/07332: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07341: {Controlling the bonding environment, e.g. atmosphere composition or temperature}
- H10W 72/30: Die-attach connectors
- H10W 72/353: {not comprising solid metals or solid metalloids, e.g. ceramics}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/931: {Shapes of bond pads}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/951: {Materials of bond pads}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 80/011: {Manufacture or treatment of pads or other interconnections to be direct bonded}
- H10W 80/016: {Cleaning}
- H10W 80/312: {characterised by the direct bonding of electrically conductive pads}
- H10W 80/327: {characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers}
- H10W 80/732: {having shape changed during the connecting}
- H10W 80/743: {having disposition changed during the connecting}
- H10W 90/792: {between multiple chips}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Wafer bonding methods and wafer bonding structures are provided. An exemplary wafer bonding method includes providing a first wafer; forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on the surface of the first wafer; providing a second wafer; forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on surface of the second wafer; forming a self-assembling layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer.

## Claims

### Claim 1

A wafer bonding method, comprising:
providing a first wafer;
forming a first interlayer dielectric layer and a first bonding layer passing through the first interlayer dielectric layer on a surface of the first wafer;
providing a second wafer;
forming a second interlayer dielectric layer and a second bonding layer passing through the second interlayer dielectric layer on a surface of the second wafer;
forming a self-assembling molecular layer on at least one of a surface of the first interlayer dielectric layer and a surface of the second interlayer dielectric layer; and
bonding the first wafer with the second wafer, the first bonding layer and the second bonding layer being fixed with each other, and the first interlayer dielectric layer and the second interlayer dielectric layer being fixed with each other by the self-assembling molecular layer.

### Claim 2 (depends on 1)

The wafer bonding method according to claim 1, wherein:
the self-assembling molecular layer includes at least one of a first self-assembling molecular layer and a second self-assembling molecular layer;
the first self-assembling layer is on the surface of the first interlayer dielectric layer; and
the second self-assembling layer is on the surface of the second interlayer dielectric layer.

### Claim 3 (depends on 2)

The wafer bonding method according to claim 2, wherein forming the first self-assembling molecular layer comprises:
forming a first self-assembling molecular material layer on the surface of the first interlayer dielectric layer and the surface of the first bonding layer; and
removing a portion of the first self-assembling molecular material layer on the first bonding layer.

### Claim 4 (depends on 3)

The wafer bonding method according to claim 3, wherein forming the first self-assembling molecular material layer comprises:
performing a first plasma treatment process on the surface of the first interlayer dielectric layer and the surface of the first bonding layer;
performing a first hydroxylation process on the surface of the first interlayer dielectric layer and the first bonding layer to form hydroxyl groups on the surface of the first interlayer dielectric layer and the first bonding layer; and
introducing a first precursor gas group including a first precursor and water vapor,
wherein:
the first precursor gas and the water vapor have a reaction to form a first intermediate product having absorption groups; and
the absorption groups in the first intermediate product and the hydroxyl groups on the surface of the first bonding layer and the first interlayer dielectric are bonded together.

### Claim 5 (depends on 4)

The wafer bonding method according to claim 4, wherein:
a gas of the first plasma treatment process includes oxygen; and
the first hydroxylation process includes one of exposing the first interlayer dielectric and the first bonding layer in air, and introducing water vapor on the surface of the first interlayer dielectric layer and the surface of the first bonding layer.

### Claim 6 (depends on 4)

The wafer bonding method according to claim 4, wherein:
the first precursor gas includes one or more of CF3(CF2)7(CH2)2SiCl3, CF3(CF2)5(CH2)2SiCl3, CF3(CF2)5(CH2)2Si(OC2H5)3, CF3(CF2)5(CH2)2Si(CH3)Cl2, CF3(CF2)5(CH2)2Si(CH3)2Cl, and CH3(CH2)17SiCl3.

### Claim 7 (depends on 4)

The wafer bonding method according to claim 4, wherein forming the second self-assembling molecular layer comprises: forming a second self-assembling molecular material layer on the surface of the second interlayer dielectric layer and the surface of the second bonding layer; and removing a portion of the second self-assembling molecular material layer on the second bonding layer.

### Claim 8 (depends on 7)

The wafer bonding method according to claim 7, wherein forming the second self-assembling molecular material layer comprises:
performing a second plasma treatment process on the surface of the second interlayer dielectric layer and the surface of the second bonding layer;
performing a second hydroxylation process on the surface of the second interlayer dielectric layer and the second bonding layer to form hydroxyl bonds on the surface of the second interlayer dielectric layer and the second bonding layer; and
introducing a second precursor gas group including a second precursor and water vapor,
wherein:
the second precursor gas and the water vapor have a reaction to form a second intermediate product having absorption groups; and
the absorption groups in the second intermediate product and the hydroxyl groups on the surface of the second bonding layer are bonded together.

### Claim 9 (depends on 8)

The wafer bonding method according to claim 8, wherein:
a gas of the second plasma treatment process includes oxygen; and
the second hydroxylation process includes one of exposing the second interlayer dielectric and the second bonding layer in air, and introducing water vapor on the surface of the second interlayer dielectric layer and the surface of the second bonding layer.

### Claim 10 (depends on 8)

The wafer bonding method according to claim 8, wherein:
the second precursor gas includes one or more of CF3(CF2)7(CH2)2SiCl3, CF3(CF2)5(CH2)2SiCl3, CF3(CF2)5(CH2)2Si(OC2H5)3, CF3(CF2)5(CH2)2Si(CH3)Cl2, CF3(CF2)5(CH2)2Si(CH3)2Cl, and CH3(CH2)17SiCl3.

### Claim 11 (depends on 1)

The wafer bonding method according to claim 1, wherein: the first bonding layer and the second bonding layer are bonded together by a thermal annealing process and a total thickness of the first interlayer dielectric, the second interlayer dielectric layer and the self-assembling molecular layer is greater than, or substantially equal to a total thickness of the first bonding layer and the second bonding layer.

### Claim 12 (depends on 11)

The wafer bonding method according to claim 11, wherein:
a temperature of the thermal annealing process is in a range of approximately 100° C.-500° C.; and
a time of the thermal annealing process is in a range of approximately 5 minutes-6 mins.

### Claim 13 (depends on 1)

The wafer bonding method according to claim 1, wherein: the first bonding layer and the second bonding layer are bonded together by a hot-pressing process and a total thickness of the first interlayer dielectric, the second interlayer dielectric layer and the self-assembling molecular layer is smaller than, or substantially equal to a total thickness of the first bonding layer and the second bonding layer.

### Claim 14 (depends on 13)

The wafer bonding method according to claim 13, wherein:
a pressure of the hot-pressing process is in a range of approximately 100 KPa-50 MPa;
a temperature of the hot-pressing process is in a range of approximately 100° C.-600° C.; and
the hot-pressing process is performed for approximately 10 minutes-120 minutes.