# US 10,121,758 B2 · Bonding wire for semiconductor device

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- Number: US 10,121,758 B2
- Document ID: US10121758B2
- Status: Granted
- Kind: B2
- Application number: 15/852,798
- Filed: 2017-12-22
- Published: 2018-05-03
- Granted: 2018-11-06
- Earliest claimed: 2015-08-12
- Assignees: Nippon Micrometal Corporation; Nippon Steel & Sumikin Materials Co., Ltd.
- Applicants: Nippon Micrometal Corporation; Nippon Steel & Sumikin Materials Co., Ltd.
- Inventors: Daizo Oda; Motoki Eto; Kazuyuki Saito; Teruo Haibara; Ryo Oishi; Takashi Yamada; Tomohiro Uno
- Web page: https://patentgrep.com/patent/US10121758B2

## CPC

- C22C 9/00: Alloys based on copper
- B32B 15/00: Layered products comprising {a layer of} metal
- C22C 5/04: Alloys based on a platinum group metal
- C22C 9/06: with nickel or cobalt as the next major constituent
- H10W 72/015: {of bond wires}
- H10W 72/01515: {Forming coatings}
- H10W 72/01551: {Changing the shapes of bond wires}
- H10W 72/01565: {Thermally treating}
- H10W 72/075: {of bond wires}
- H10W 72/07511: {Treating the bonding area before connecting, e.g. by applying flux or cleaning}
- H10W 72/07541: {Controlling the environment, e.g. atmosphere composition or temperature}
- H10W 72/07555: {changes in materials}
- H10W 72/50: Bond wires
- H10W 72/522: {Multilayered bond wires, e.g. having a coating concentric around a core}
- H10W 72/523: {characterised by the structures of the outermost layers, e.g. multilayered coatings}
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/552: {comprising metals or metalloids, e.g. silver}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/5528: {Intermetallic compounds}
- H10W 72/555: {of outermost layers of multilayered bond wires, e.g. material of a coating}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/00: Encapsulations, e.g. protective coatings
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

## Claims

### Claim 1

A bonding wire for a semiconductor device, comprising:
a Cu alloy core material; and
a Pd coating layer formed on a surface of the Cu alloy core material, wherein
the bonding wire contains Ge, and
a concentration of Ge relative to the entire wire is 0.011 to 1.5% by mass.

### Claim 2 (depends on 1)

The bonding wire for a semiconductor device according to claim 1, wherein a thickness of the Pd coating layer is 0.015 to 0.150 μm.

### Claim 3 (depends on 1)

The bonding wire for a semiconductor device according to claim 1, further comprising an alloy skin layer containing Au and Pd on the Pd coating layer.

### Claim 4 (depends on 3)

The bonding wire for a semiconductor device according to claim 3, wherein a thickness of the alloy skin layer containing Au and Pd is 0.0005 to 0.050 μm.

### Claim 5 (depends on 1)

The bonding wire for a semiconductor device according to claim 1, wherein
the bonding wire further contains one or more elements selected from Ni, Ir, and Pt, and
a concentration of each of the elements relative to the entire wire is 0.011 to 1.2% by mass.

### Claim 6 (depends on 1)

The bonding wire for a semiconductor device according to claim 1, wherein
the Cu alloy core material contains Pd, and
a concentration of Pd contained in the Cu alloy core material is 0.05 to 1.2% by mass.

### Claim 7 (depends on 1)

The bonding wire for a semiconductor device according to claim 1, wherein
the bonding wire further contains at least one element selected from B, P, and Mg, and
a concentration of each of the elements relative to the entire wire is 1 to 100 ppm by mass.

### Claim 8 (depends on 1)

The bonding wire for a semiconductor device according to claim 1, in a measurement result when measuring crystal orientations on a surface of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a longitudinal direction has a proportion of 30 to 100% in terms of areal percentage among crystal orientations in the longitudinal direction of the bonding wire.

### Claim 9 (depends on 1)

The bonding wire for a semiconductor device according to claim 1, wherein Cu is present in an outermost surface of the bonding wire.