Interconnect structures and methods for fabricating interconnect structures

An interconnect structure formed on a semiconductor structure having a substrate and an interconnect pad, the interconnect structure comprising:

• a conductive structure having first and second opposing portions, wherein the first portion of the conductive structure is disposed over a surface of the interconnect pad and the second portion of the conductive structure extends a predetermined distance from the interconnect pad surface, and wherein the predetermined distance is substantially greater than a thickness of a resist layer disposed over the interconnect pad surface during fabrication of the conductive structure, the resist layer thickness corresponding to a distance between first and second opposing surfaces of the resist layer, the resist layer having an opening formed therein for receiving conductive materials used to form the conductive structure, the resist layer opening extending between the first and second resist layer surfaces, wherein the second portion of the conductive structure is disposed over the resist layer opening and onto the second surface of the resist layer during the conductive structure fabrication, such that the second portion of the conductive structure has a surface with a dimension greater than a width or radius of at least a first portion of the resist layer opening proximate to the second surface of the resist layer;
• wherein the conductive structure has an aspect ratio of a first dimension corresponding to a distance between the first and second portions to a second dimension corresponding to width of the conductive structure, the aspect ratio is a function of the thickness of the resist layer.