# US 10,121,751 B2 · Integrated antennas in wafer level package > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,751 B2 - Document ID: US10121751B2 - Status: Granted - Kind: B2 - Application number: 15/137,594 - Filed: 2016-04-25 - Published: 2016-08-18 - Granted: 2018-11-06 - Earliest claimed: 2009-01-30 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Rudolf Lachner; Linus Maurer; Maciej Wojnowski - Web page: https://patentgrep.com/patent/US10121751B2 ## CPC - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package} - H01Q 9/0407: {Substantially flat resonant element parallel to ground plane, e.g. patch antenna (dipole H01Q9/285; monopole H01Q9/40)} - H01Q 9/045: {with particular feeding means (for circular polarisation H01Q9/0428)} - H01Q 9/0457: {electromagnetically coupled to the feed line} - H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs - H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation} - H10W 44/206: {Wires} - H10W 44/234: {Arrangements for impedance matching} - H10W 44/248: {for antennas} - H10W 44/251: {for monolithic microwave integrated circuits [MMIC]} - H10W 72/241: {Dispositions, e.g. layouts} - H10W 72/29: Bond pads specially adapted therefor - H10W 72/59: Bond pads specially adapted therefor - H10W 72/9413: {on encapsulations} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/10: characterised by their shape or disposition - H10W 74/117: {the substrate having spherical bumps for external connection} - H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body} - H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72) ## Abstract A semiconductor module comprises an integrated circuit device, the IC device embedded in a compound material, wherein the compound material at least partially extends lateral to the IC device. The semiconductor module further comprises interconnect structures arranged lateral to the IC device to provide at least one external electrical contact; a patch antenna structure integrated in the semiconductor module and electrically connected to the IC device and a layer interfacing the IC device and the compound, wherein the layer comprises first and second planar metal structures coupled to the IC device, wherein the first planar metal structure is electrically connected to the IC device and the interconnect structures and wherein the second planar metal structure is electrically connected to the IC device and the patch antenna structure. ## Claims ### Claim 1 A semiconductor module comprising: an integrated circuit (IC) device, the IC device embedded in a compound material, wherein the compound material at least partially extends lateral to the IC device; interconnect structures arranged lateral to the IC device to provide at least one external electrical contact; a patch antenna structure integrated in the semiconductor module and electrically connected to the IC device; and a planar layer interfacing the IC device and the compound material, wherein the planar layer interfaces a planar surface of the IC device on a first side of the IC device, wherein the planar layer comprises first and second planar metal structures coupled to the IC device, wherein the first and second planar metal structures are electrically connected to IC device connections, wherein the IC device connections are located on the first side of the IC device, wherein the first planar metal structure is further electrically connected to the interconnect structures and wherein the second planar metal structure is further electrically connected to the patch antenna structure. ### Claim 2 (depends on 1) The semiconductor module according to claim 1, wherein the first and second planar metal structures are co-planar. ### Claim 3 (depends on 1) The semiconductor module according to claim 1, wherein the first and second planar metal structures extend parallel to a main surface of the semiconductor module. ### Claim 4 (depends on 3) The semiconductor module according to claim 3, wherein the first and second metal structures are arranged in a same dielectric coat. ### Claim 5 (depends on 1) The semiconductor module according to claim 1, the semiconductor module further comprising a reflector opposing the patch antenna structure. ### Claim 6 (depends on 1) The semiconductor module according to claim 1, wherein the first and second planar metal structures are formed from a same metallization layer. ### Claim 7 (depends on 1) The semiconductor module according to claim 1, wherein the IC device is electrically connected to an external board and wherein at least a first portion of the planar layer extends between the IC device and the external board and a second portion of the planar layer extends between the compound material and the external board. ### Claim 8 (depends on 1) The semiconductor module according to claim 1, wherein the interconnect structures comprise at least one solder ball. ### Claim 9 (depends on 1) The semiconductor module according to claim 1, wherein the first and second planar metal structures are facing the first side of the IC device. ### Claim 10 A semiconductor module comprising: an integrated circuit (IC) device, the IC device embedded in a compound material, wherein the compound material at least partially extends lateral to the IC device; interconnect structures arranged lateral to the IC device to provide at least one external electrical contact; an antenna structure integrated in the semiconductor module, wherein at least a portion of the antenna structure extends lateral to the IC device; and a planar layer interfacing the IC device and the compound material, wherein the planar layer interfaces a planar surface of the IC device on a first side of the IC device, wherein the planar layer comprises first and second planar metal structures, wherein the first planar metal structure is provided to electrically connect the IC device to the interconnect structures and the second planar metal structure is provided to transmit signals transmitted or received by the antenna structure, wherein the first and second planar metal structures are co-planar, wherein the first and second planar metal structures are electrically connected to IC device connections, wherein the IC device connections are located on the first side of the IC device. ### Claim 11 A semiconductor module comprising: an integrated circuit (IC) device, the IC device embedded in a compound material, wherein the compound material at least partially extends lateral to the IC device; interconnect structures arranged lateral to the IC device to provide at least one external electrical contact; a planar antenna structure integrated in the semiconductor module, the semiconductor module configured to actively radiate signals from the IC device via the planar antenna structure, wherein at least a portion of the planar antenna structure extends lateral to the IC device; and a planar layer interfacing the IC device and the compound material, wherein the planar layer interfaces a planar surface of the IC device on a first side of the IC device, wherein the planar layer comprises first and second planar metal structures coupled to the IC device, wherein the first planar metal structure is provided to electrically connect the IC device to the interconnect structures and the second planar metal structure is provided to at least transmit signals from the IC device to the antenna structure, wherein the second planar metal structure at least partly extends to face the IC device and at least partly extends to face the compound material, wherein the first and second planar metal structures are electrically connected to IC device connections, wherein the IC device connections are located on the first side of the IC device. ### Claim 12 (depends on 11) The semiconductor module according to claim 11, wherein the interconnect structures comprise at least one solder ball. ### Claim 13 (depends on 11) The semiconductor module according to claim 11, wherein the first and second planar metal structures are facing the first side of the IC device.