# US 10,121,750 B2 · Sensor chip package assembly and electronic device having sensor chip package assembly

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- Number: US 10,121,750 B2
- Document ID: US10121750B2
- Status: Granted
- Kind: B2
- Application number: 15/611,766
- Filed: 2017-06-01
- Published: 2017-09-21
- Granted: 2018-11-06
- Earliest claimed: 2015-09-11
- Assignees: Shenzhen Goodix Technology Co., Ltd.
- Applicants: Shenzhen Goodix Technology Co., Ltd.
- Inventors: Yuping Liu; Wei Long
- Web page: https://patentgrep.com/patent/US10121750B2

## CPC

- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 70/041: {Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps}
- H10W 70/042: {Etching}
- H10W 70/411: {Chip-supporting parts, e.g. die pads}
- H10W 70/421: {Shapes or dispositions}
- H10W 70/424: {Cross-sectional shapes (H10W70/481 takes precedence)}
- H10W 70/457: {of metallic layers on leadframes}
- H10W 70/465: {Bumps or wires}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 74/016: {using moulds}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 74/129: {forming a chip-scale package [CSP]}
- H10W 72/0198: {batch processes}
- H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07554: {changes in dispositions}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/5366: {the bond wires having kinks}
- H10W 72/5434: {the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires}
- H10W 72/547: {Dispositions of multiple bond wires}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/932: {Plan-view shape, i.e. in top view}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/10: characterised by their shape or disposition
- H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A sensor chip package assembly and an electronic device having the sensor chip package assembly are disclosed, where the sensor chip package assembly includes: a metal substrate (100) which has a bonding pad region (11) and a placement region (12), the bonding pad region having a plurality of metal bonding pads (13); a sensor chip (200) which is located on an upper surface of the metal substrate, and the sensor chip having a plurality of sensor chip bonding pads (21); an electrical connection assembly (300) which electrically connects a metal bonding pad and a sensor chip bonding pad; and a packaging material cover (400) which covers the metal substrate, the sensor chip and the electrical connection assembly, where any two adjacent metal bonding pads are spaced in an insulated manner by the packaging material cover.

## Claims

### Claim 1

A sensor chip package assembly, comprising:
a metal substrate having a bonding pad region and a placement region, wherein the bonding pad region having a plurality of metal bonding pads;
a sensor chip being located on an upper surface of the metal substrate, wherein the sensor chip having a plurality of sensor chip bonding pads;
an electrical connection assembly electrically connecting a metal bonding pad and a sensor chip bonding pad;
a packaging material cover covering the metal substrate, the sensor chip and the electrical connection assembly, wherein a lower surface of the metal substrate is not covered by the packaging material cover, and any two adjacent metal bonding pads are spaced in an insulated manner by the packaging material cover; and
an insulated cover on the packaging material cover, wherein the insulated cover comprises a metal particle, wherein a volume proportion of the metal particle in the insulated cover is less than 8%.

### Claim 2 (depends on 1)

The sensor chip package assembly according to claim 1, wherein the electrical connection assembly is a bonding wire or a metal bump.

### Claim 3 (depends on 1)

The sensor chip package assembly according to claim 1, wherein shapes of the plurality of metal bonding pads are different.

### Claim 4 (depends on 1)

The sensor chip package assembly according to claim 1, wherein the metal bonding pad adopts a half-etching or a hollowing design.

### Claim 5 (depends on 1)

The sensor chip package assembly according to claim 1, wherein the metal substrate is provided with a chip holding portion, the chip holding portion of the metal substrate adopting a recessed design or a coplanar design.

### Claim 6 (depends on 1)

The sensor chip package assembly according to claim 1, wherein the metal substrate is provided with a chip support portion, the chip support portion of the metal substrate being placed at four corners of the metal substrate or being placed among the plurality of metal bonding pads.

### Claim 7 (depends on 1)

The sensor chip package assembly according to claim 1, wherein the metal substrate is a copper substrate, a substrate with tin or silver plated on a copper base material.

### Claim 8 (depends on 1)

The sensor chip package assembly according to claim 1, wherein the metal substrate adopts half-etching or half-cutting after packaging among dies to realize circuit insulation among different dies.

### Claim 9 (depends on 1)

The sensor chip package assembly according to claim 1, wherein the metal substrate is provided with a pin, the pin of the metal substrate is a no-lead bonding pad or terminal, or a protruding pin of a J type, a P type or an N type.

### Claim 10 (depends on 1)

The sensor chip package assembly according to claim 1, wherein a dielectric constant of the packaging material cover is greater than 3.

### Claim 11 (depends on 1)

The sensor chip package assembly according to claim 1, wherein the metal particle is of a wrapped type or a non-wrapped type.

### Claim 12 (depends on 1)

The sensor chip package assembly according to claim 1, wherein a diameter of a material filling particle of the packaging material cover is less than or equal to 40 um.

### Claim 13 (depends on 1)

The sensor chip package assembly according to claim 1, wherein a distance between the sensor chip and the metal bonding pad is greater than 20 micrometers.

### Claim 14 (depends on 1)

The sensor chip package assembly according to claim 1, wherein a surface of the sensor chip comprises a passivation layer.

### Claim 15 (depends on 14)

The sensor chip package assembly according to claim 14, wherein a thickness of the passivation layer is more than 10 nanometers.

### Claim 16 (depends on 1)

The sensor chip package assembly according to claim 1, wherein the sensor chip is interconnected with another chip through a wire in a through-silicon via, an edge chamfer or a backside bevel edge chamfer.

### Claim 17

An electronic device, comprising a sensor chip package assembly, wherein the sensor chip package assembly comprises:
a metal substrate having a bonding pad region and a placement region, wherein the bonding pad region having a plurality of metal bonding pads;
a sensor chip being located on an upper surface of the metal substrate, wherein the sensor chip having a plurality of sensor chip bonding pads;
an electrical connection assembly electrically connecting a metal bonding pad and a sensor chip bonding pad;
a packaging material cover covering the metal substrate, the sensor chip and the electrical connection assembly, wherein a lower surface of the metal substrate is not covered by the packaging material cover, and any two adjacent metal bonding pads are spaced in an insulated manner by the packaging material cover; and
an insulated cover on the packaging material cover, wherein the insulated cover comprises a metal particle, wherein a volume proportion of the metal particle in the insulated cover is less than 8%.

### Claim 18

A method for producing a sensor chip package, comprising:
coating an adhesive in a placement region of a metal substrate to form an adhesive layer in the placement region of the metal substrate;
placing a sensor chip on the adhesive layer to make the sensor chip fixed on an upper surface of the placement region of the metal substrate;
electrically connecting a sensor chip bonding pad with a metal bonding pad;
placing an obtained assembly in a mold, an upper portion of the mold being higher than an upper surface of the sensor chip, and filling a liquid packaging material into the mold;
solidifying an obtained chip assembly filled with the packaging material;
etching the metal substrate along an edge of a bonding pad region to make the bonding pad region disconnected from the placement region; and
covering an insulated cover on the packaging material, wherein the insulated cover comprises a metal particle, wherein a volume proportion of the metal particle in the insulated cover is less than 8%.