# US 10,121,732 B2 · Semiconductor device and electric power conversion device having relay terminal directly fixed to an insulating film of base plate

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- Number: US 10,121,732 B2
- Document ID: US10121732B2
- Status: Granted
- Kind: B2
- Application number: 15/784,472
- Filed: 2017-10-16
- Published: 2018-08-09
- Granted: 2018-11-06
- Earliest claimed: 2017-02-03
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Yoshitaka Kimura; Yoshitaka Otsubo
- Web page: https://patentgrep.com/patent/US10121732B2

## CPC

- H10W 72/50: Bond wires
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/6875: {being on a metallic substrate, e.g. insulated metal substrates [IMS]}
- H10W 76/136: having other interconnections perpendicular to the conductive base
- H10W 90/00: Package configurations
- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 12/441: {Vertical IGBTs}
- H10W 72/07552: {changes in structures or sizes}
- H10W 72/07554: {changes in dispositions}
- H10W 72/527: {Multiple bond wires having different sizes}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/5449: {not being orthogonal to a side surface of the chip, e.g. fan-out arrangements}
- H10W 72/5473: {multiple bond wires connected to a common bond pad}
- H10W 90/753: {between laterally-adjacent chips}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes: a base plate including a metallic base plate and an insulating film provided on the metallic base plate; a semiconductor chip provided on the base plate; a control board disposed above the semiconductor chip; and a relay terminal connected to a signal electrode of the semiconductor chip through a signal line wire, extending to the control board, and connected to the control board, wherein the relay terminal is directly fixed to the insulating film of the base plate.

## Claims

### Claim 1

A semiconductor device comprising:
a base plate including a metallic base plate and an insulating film provided on the metallic base plate;
a semiconductor chip provided on the base plate;
a control board disposed above the semiconductor chip; and
a relay terminal connected to a signal electrode of the semiconductor chip through a signal line wire, extending to the control board, and connected to the control board,
wherein the relay terminal is directly fixed to the insulating film of the base plate.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising a main electrode terminal connected to a main electrode of the semiconductor chip through a main line wire and directly fixed to the insulating film of the base plate.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, comprising:
a circuit pattern provided on an upper surface of the base plate; and
a main line wire connecting a main electrode of the semiconductor chip to the circuit pattern,
wherein the relay terminal is disposed on an inner side of the base plate than the circuit pattern on an upper surface of the base plate.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the relay terminal includes a plurality of terminals disposed in a zig-zag manner on an upper surface of the base plate.

### Claim 5 (depends on 1)

The semiconductor device according to any claim 1, wherein the semiconductor chip is made of a wide-band-gap semiconductor.

### Claim 6 (depends on 1)

An electric power conversion device comprising:
a main conversion circuit including the semiconductor device according to claim 1, converting input power and outputting the converted power, and
a control circuit outputting a control signal for controlling the main conversion circuit to the main conversion circuit.