# US 10,121,728 B2 · Thin film capacitor and semiconductor device with improved heat dissipation

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- Number: US 10,121,728 B2
- Document ID: US10121728B2
- Status: Granted
- Kind: B2
- Application number: 15/217,111
- Filed: 2016-07-22
- Published: 2017-01-26
- Granted: 2018-11-06
- Earliest claimed: 2015-07-22
- Assignees: TDK Corporation
- Applicants: TDK Corporation
- Inventors: Masahiro Yamaki; Hitoshi Saita
- Web page: https://patentgrep.com/patent/US10121728B2

## CPC

- H10W 40/70: Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
- H01G 2/14: Protection against electric or thermal overload (by cooling H01G2/08)
- H01G 4/005: Electrodes
- H01G 4/012: Form of non-self-supporting electrodes
- H01G 4/224: Housing; Encapsulation
- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- H10D 1/711: {having non-planar surfaces, e.g. formed by texturisation}
- H10D 1/712: {being rough surfaces, e.g. using hemispherical grains}
- H10W 40/228: {the projecting parts being wire-shaped or pin-shaped}
- H10W 70/685: comprising multiple insulating layers
- H01G 4/1227: {based on alkaline earth titanates}
- H10W 70/635: {Through-vias}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/728: {between a chip and a stacked discrete passive device, e.g. resistors, capacitors or inductors}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present invention provides a thin film capacitor including a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer, wherein a ratio (S/S0) of a surface area S of a surface of the first electrode layer on an opposite side to the dielectric layer to a projected area S0 in a thickness direction of the first electrode layer is 1.01 to 5.00.

## Claims

### Claim 1

A thin film capacitor comprising:
a first electrode layer having an upper surface and a lower surface, the upper surface being a flat surface;
a second electrode layer; and
a dielectric layer provided between the upper surface of the first electrode layer and the second electrode layer, with the upper surface of the first electrode layer facing the dielectric layer and the lower surface of the first electrode layer facing away from the dielectric layer,
wherein the lower surface of the first electrode layer has a surface roughness selected so that a ratio (S/S0) of a surface area S of the lower surface of the first electrode layer to a projected area S0 in a thickness direction of the first electrode layer is 1.01 to 5.00.

### Claim 2 (depends on 1)

The thin film capacitor according to claim 1,
wherein heat conductivity λ of the first electrode layer is 90 W/(m·K) or higher.

### Claim 3 (depends on 1)

The thin film capacitor according to claim 1,
wherein ten-point average roughness Rz of the surface of the first electrode layer on the opposite side to the dielectric layer is 0.02 to 2.00 μm.

### Claim 4 (depends on 1)

A semiconductor device comprising:
a support substrate;
a semiconductor element mounted on one main surface of the support substrate; and
the thin film capacitor according to claim 1,
wherein the thin film capacitor is embedded inside the support substrate in such a way that the second electrode layer and the semiconductor element face each other.

### Claim 5 (depends on 1)

The thin film capacitor according to claim 1,
wherein the dielectric layer is a flat layer.