# US 10,121,723 B1 · Semiconductor component and method for producing a semiconductor component > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,723 B1 - Document ID: US10121723B1 - Status: Granted - Kind: B1 - Application number: 15/486,907 - Filed: 2017-04-13 - Published: 2018-10-18 - Granted: 2018-11-06 - Earliest claimed: 2017-04-13 - Assignees: Infineon Technologies Austria AG - Applicants: Infineon Technologies Austria AG - Inventors: Kok Tee Lau; Jayaganasan Narayanasamy - Web page: https://patentgrep.com/patent/US10121723B1 ## CPC - H10W 40/259: {Ceramics or glasses (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10W 40/10: Arrangements for heating - H10W 40/226: {characterised by projecting parts, e.g. fins to increase surface area (leadframes for cooling H10W70/461)} - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract According to an embodiment of a method, the method includes forming a first thermally conductive layer on an outer surface of a semiconductor package. The first thermally conductive layer formed on the outer surface of the semiconductor package is configured to be mounted to an external heat sink. ## Claims ### Claim 1 A method comprising: forming a first thermally conductive layer on an outer surface of a semiconductor package, wherein forming the first thermally conductive layer comprises: depositing a first material on the outer surface of the semiconductor package; and depositing a second material on the first material after depositing the first material, wherein depositing the second material on the first material comprises at least one of an electrophoretic deposition process, an e-coating process, a dispensing method, an electrostatic spraying method or a dipping method. ### Claim 2 (depends on 1) The method of claim 1, wherein forming the first thermally conductive layer comprises the electrophoretic deposition process. ### Claim 3 (depends on 1) The method of claim 1, wherein depositing the first material comprises forming a porous pre-layer on the outer surface of the semiconductor package. ### Claim 4 (depends on 1) The method of claim 1, wherein depositing the first material comprises an electrophoretic deposition process. ### Claim 5 (depends on 1) The method of claim 1, wherein the first material comprises at least one of the following: boron nitride, aluminum oxide, silicon carbide, silicon dioxide, or a ceramic material including an oxide or nitride combination. ### Claim 6 (depends on 1) The method of claim 1, wherein the second material comprises a thermally conductive material with or without fillers or a polymer. ### Claim 7 (depends on 1) The method of claim 1, further comprising: after depositing the first material, sintering the first material. ### Claim 8 (depends on 1) The method of claim 1, after depositing the second material further comprising at least one of: heating the first and the second material; or exposing the first and the second material to a vacuum. ### Claim 9 (depends on 1) The method of claim 1, wherein the first material deposited on the outer surface of the semiconductor package has a first thickness, and wherein the thermal conductivity of the first thermally conductive layer is dependent on the first thickness. ### Claim 10 (depends on 1) The method of claim 1, wherein the outer surface of the semiconductor package comprises an electrically conductive surface. ### Claim 11 (depends on 1) The method of claim 1, wherein the first thermally conductive layer formed on the outer surface of the semiconductor package is configured to be mounted to an external heat sink. ### Claim 12 (depends on 3) The method of claim 3, wherein the porous pre-layer comprises cavities and depositing the second material on the first material comprises at least partially filling the cavities of the pre-layer. ### Claim 13 (depends on 10) The method of claim 10, wherein the electrically conductive surface is a heat sink or a die pad of the semiconductor package. ### Claim 14 (depends on 10) The method of claim 10, wherein forming the first thermally conductive layer comprises applying a direct current to the electrically conductive surface. ### Claim 15 A semiconductor component, comprising: a semiconductor package with an outer surface; and a first thermally conductive layer arranged on the outer surface of the semiconductor package, wherein the first thermally conductive layer comprises a first material comprising a porous pre-layer disposed on the outer surface of the semiconductor package and a second material disposed over first material. ### Claim 16 (depends on 15) The semiconductor component of claim 15, wherein the first material comprises at least one of the following boron nitride, aluminum oxide, silicon carbide, silicon dioxide, or a ceramic material including an oxide or a nitride combination. ### Claim 17 (depends on 15) The semiconductor component of claim 15, wherein the second material comprises: a thermally conductive material with or without fillers; or a polymer. ### Claim 18 (depends on 15) The semiconductor component of claim 15, wherein the outer surface comprises an electrically conductive surface. ### Claim 19 (depends on 15) The semiconductor component of claim 15, wherein the semiconductor component with the first thermally conductive layer arranged thereon is configured to be mounted to an external heat sink such that the first thermally conductive layer faces the external heat sink. ### Claim 20 (depends on 15) The semiconductor component of claim 15, wherein the porous pre-layer comprises cavities and the second material at least partially fills the cavities of the porous prelayer. ### Claim 21 (depends on 18) The semiconductor component of claim 18, wherein the electrically conductive surface is a heat sink or a die pad of the semiconductor component.