# US 10,121,719 B2 · Semiconductor device

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- Number: US 10,121,719 B2
- Document ID: US10121719B2
- Status: Granted
- Kind: B2
- Application number: 15/456,755
- Filed: 2017-03-13
- Published: 2018-01-18
- Granted: 2018-11-06
- Earliest claimed: 2016-07-15
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Yasuo Konishi
- Web page: https://patentgrep.com/patent/US10121719B2

## CPC

- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 72/00: Interconnections or connectors in packages
- H10W 72/50: Bond wires
- H10W 76/15: Containers comprising an insulating or insulated base
- H10W 72/07554: {changes in dispositions}
- H10W 72/547: {Dispositions of multiple bond wires}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided is a technique for enhancing heat dissipation properties in dissipating heat generated in an electrode to a heatsink without impairing bonding properties between the electrode and a wire. In a semiconductor device, a portion of an electrode within an inner region defined by a case, at one surface, i.e., the lower surface with respect to a position in which a wire is connected, a resin portion is provided, the resin portion extending from an inner wall of the case to an upper-surface side of the heatsink. Additionally, in the portion of the electrode within the inner region defined by the case, at one surface, i.e., the lower surface with respect to a position in which the wire is not connected, a thermal conductor is provided, the thermal conductor having higher heat conductivity than the resin portion.

## Claims

### Claim 1

A semiconductor device comprising:
a heatsink;
an insulating substrate disposed above said heatsink;
a semiconductor element disposed above said insulating substrate;
a case made of resin, said case enclosing an upper-surface side of said heatsink, said insulating substrate, and said semiconductor element; and
an electrode including a portion within an inner region defined by said case, said electrode being electrically connected to said semiconductor element at one surface of said portion through a wire,
wherein in said portion of said electrode within said inner region defined by said case, at another surface with respect to a position in which said wire is connected, a resin portion is provided, said resin portion extending from an inner wall of said case to said upper-surface side of said heatsink and from an end of said electrode within said inner region defined by said case towards said inner wall of said case, and
wherein in said portion of said electrode within said inner region defined by said case, at another surface with respect to a position in which said wire is not connected, a heat conductor is provided in direct contact with said electrode, said heat conductor having higher thermal conductivity than said resin portion.

### Claim 2

A semiconductor device comprising:
a heatsink;
an insulating substrate disposed above said heatsink;
a semiconductor element disposed above said insulating substrate;
a case made of resin, said case enclosing an upper-surface side of said heatsink, said insulating substrate, and said semiconductor element; and
an electrode including a portion within an inner region defined by said case, said electrode being electrically connected to said semiconductor element at one surface of said portion through a wire,
wherein another surface of said portion of said electrode within said inner region defined by said case is an uneven surface having a predetermined pattern that includes an annular protrusion or recess, linear two-way protrusions or recesses that intersect with each other, or protrusions or recesses that have vertexes and are triangular in a side view, and
wherein at said uneven surface, a resin portion is provided, said resin portion extending from an inner wall of said case to said upper-surface side of said heatsink and having an uneven portion fitted in said uneven surface.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein said electrode comprises a main electrode.

### Claim 4

A semiconductor device comprising:
an insulating substrate whose lower part has a heat dissipation portion;
a semiconductor element disposed above said insulating substrate;
a case made of resin, said case enclosing an upper-surface side of said insulating substrate and said semiconductor element; and
an electrode including a portion within an inner region defined by said case, said electrode being electrically connected to said semiconductor element at one surface of said portion through a wire,
wherein in said portion of said electrode within said inner region defined by said case, at another surface with respect to a position in which said wire is connected, a resin portion is provided, said resin portion extending from an inner wall of said case to said upper-surface side of said insulating substrate and from an end of said electrode within said inner region defined by said case towards said inner wall of said case, and
wherein in said portion of said electrode within said inner region defined by said case, at another surface with respect to a position in which said wire is not connected, a heat conductor is provided in direct contact with said electrode, said heat conductor having higher thermal conductivity than said resin portion.

### Claim 5

A semiconductor device comprising:
an insulating substrate whose lower part has a heat dissipation portion;
a semiconductor element disposed above said insulating substrate;
a case made of resin, said case enclosing an upper-surface side of said insulating substrate and said semiconductor element; and
an electrode including a portion within an inner region defined by said case, said electrode being electrically connected to said semiconductor element at one surface of said portion through a wire,
wherein another surface of said portion of said electrode within said inner region defined by said case is an uneven surface having a predetermined pattern that includes an annular protrusion or recess, linear two-way protrusions or recesses that intersect with each other, or protrusions or recesses that have vertexes and are triangular in a side view, and
wherein at said uneven surface, a resin portion is provided, said resin portion extending from an inner wall of said case to said upper-surface side of said insulating substrate and having an uneven portion fitted in said uneven surface.