# US 10,121,711 B2 · Planar metrology pad adjacent a set of fins of a fin field effect transistor device

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- Number: US 10,121,711 B2
- Document ID: US10121711B2
- Status: Granted
- Kind: B2
- Application number: 14/816,708
- Filed: 2015-08-03
- Published: 2015-11-26
- Granted: 2018-11-06
- Earliest claimed: 2013-10-30
- Assignees: Globalfoundries Inc.
- Applicants: GLOBALFOUNDRIES Inc.
- Inventors: Sipeng Gu; Xiang Hu; Alok Vaid; Lokesh Subramany; Akshey Sehgal
- Web page: https://patentgrep.com/patent/US10121711B2

## CPC

- H10P 74/27: {Structural arrangements therefor}
- G01R 31/2621: {for testing field effect transistors, i.e. FET's}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/834: {comprising FinFETs}
- H10D 84/853: {comprising FinFETs}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Approaches for providing a substrate having a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. Specifically, the FinFET device comprises a finned substrate, and a planar metrology pad formed on the substrate adjacent the fins in a metrology measurement area of the FinFET device. Processing steps include forming a first hardmask over the substrate, forming a photoresist over a portion of the first hardmask in the metrology measurement area of the FinFET device, removing the first hardmask in an area adjacent the metrology measurement area remaining exposed following formation of the photoresist, patterning a set of openings in the substrate to form the set of fins in the FinFET device in the area adjacent the metrology measurement area, depositing an oxide layer over the FinFET device, and planarizing the FinFET device to form the planar metrology pad in the metrology measurement area.

## Claims

### Claim 1

An apparatus, comprising:
a substrate;
a metrology measurement area patterned in the substrate;
a first hardmask disposed on the metrology measurement area;
a set of fins patterned in the substrate;
a second hardmask disposed on each fin of the set of fins and on the first hardmask, wherein the second hardmask is patterned to comprise projections above the first hardmask;
a spacer material disposed on the second hardmask; and
a planar metrology pad formed in the metrology measurement area, wherein the planar metrology pad is substantially flat, is oriented substantially perpendicular to the set of fins, and has an upper surface substantially coplanar with the tops of the set of fins.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the substrate comprises silicon, SiGe, or SOI.

### Claim 3 (depends on 1)

The apparatus of claim 1, wherein the first hardmask comprises SiN, SiO2, SiON, or SiOC.

### Claim 4 (depends on 1)

The apparatus of claim 1, wherein the second hardmask comprises SiN.

### Claim 5 (depends on 1)

The apparatus of claim 1, wherein the spacer material comprises an oxide.

### Claim 6

An apparatus, comprising:
a substrate comprising a first region and a second region adjacent to said first region;
a metrology measurement area disposed on the second region;
a first hardmask disposed on the metrology measurement area;
a planar metrology pad formed on said second region;
a plurality of fins patterned in the first region;
a second hardmask disposed on each fin of the set of fins and on the first hardmask, wherein the second hardmask is patterned to comprise projections above the first hardmask; and
a spacer material disposed on the second hardmask;
wherein the planar metrology measurement area is substantially flat, is oriented substantially perpendicular to the plurality of fins, and has an upper surface substantially coplanar with the tops of the plurality of fins.

### Claim 7 (depends on 6)

The apparatus of claim 6, wherein the first hardmask comprises SiN, SiO2, SiON, or SiOC.

### Claim 8 (depends on 6)

The apparatus of claim 6, wherein the second hardmask comprises SiN.

### Claim 9 (depends on 6)

The apparatus of claim 6, wherein the spacer material comprises an oxide.

### Claim 10 (depends on 6)

The apparatus of claim 6, wherein the substrate comprises silicon, SiGe, or SOI.

### Claim 11 (depends on 6)

The apparatus of claim 6, further comprising an oxide formed between each of the set of fins.

### Claim 12 (depends on 6)

The apparatus of claim 6, wherein the set of fins comprises silicon.

### Claim 13 (depends on 6)

The apparatus of claim 6, wherein the planar metrology pad comprises silicon.