# US 10,121,710 B2 · Methods for manufacturing a display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,710 B2 - Document ID: US10121710B2 - Status: Granted - Kind: B2 - Application number: 15/409,809 - Filed: 2017-01-19 - Published: 2017-12-14 - Granted: 2018-11-06 - Earliest claimed: 2016-06-14 - Assignees: Innolux Corporation - Applicants: Innolux Corporation - Inventors: Chia-Hsiung Chang; Ting-Kai Hung; Hsiao-Lang Lin - Web page: https://patentgrep.com/patent/US10121710B2 ## CPC - H10P 74/232: {comprising connection or disconnection of parts of a device in response to a measurement} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/852: Encapsulations - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 90/00: Package configurations - H10D 86/40: characterised by multiple TFTs - H10D 86/60: wherein the TFTs are in active matrices - H10H 20/0361: {of wavelength conversion means} - H10H 20/0362: {of encapsulations} - H10H 20/0364: {of interconnections} - H10H 20/851: Wavelength conversion means - H10H 20/856: Reflecting means - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Methods for manufacturing a display device are provided. A representative method includes: providing a thin film transistor (TFT) substrate having a plurality of sub-pixel locations and a plurality of TFTs corresponding to the plurality of sub-pixel locations; providing a carrier substrate supporting a plurality of light emitting diodes (LEDs), wherein each of the plurality of LEDs has a first electrical contact and a second electrical contact; transferring the plurality of LEDs from the carrier substrate to the TFT substrate, with at least two of the plurality of LEDs being disposed at one of the plurality of sub-pixel locations; and fixing positions of the plurality of LEDs with respect to the TFT substrate. The method also may include: determining that a first LED of the plurality of LEDs is defective; and electrically isolating the first electrical contact of first LED from a first electrode of the display device. ## Claims ### Claim 1 A method for manufacturing a display device comprising: providing a thin film transistor (TFT) substrate having a plurality of sub-pixel locations and a plurality of TFTs corresponding to the plurality of sub-pixel locations, wherein a first electrode is disposed at one of the plurality of sub-pixel locations; providing a carrier substrate supporting a plurality of light emitting diodes (LEDs), wherein each of the plurality of LEDs has a first electrical contact and a second electrical contact; transferring the plurality of LEDs from the carrier substrate to the TFT substrate, with at least two of the plurality of LEDs being disposed at the one of the plurality of sub-pixel locations; fixing positions of the plurality of LEDs with respect to the TFT substrate; determining that one of the at least two of the plurality of LEDs at the one of the plurality of sub-pixel locations is defective; and laser cutting the first electrode disposed at the one of the plurality of sub-pixel locations. ### Claim 2 (depends on 1) The method of claim 1, further comprising: providing a filling insulator at the one of the plurality of sub-pixel locations, wherein the filling insulator fills between the at least two of the plurality of LEDs disposed at the one of the plurality of sub-pixel locations. ### Claim 3 (depends on 2) The method of claim 2, further comprising: electrically isolating the one of the at least two of the plurality of LEDs determined to be defective. ### Claim 4 (depends on 3) The method of claim 3, wherein the electrically isolating comprises providing a passivation layer over the first electrical contact of the one of the at least two of the plurality of LEDs determined to be defective. ### Claim 5 (depends on 3) The method of claim 3, further comprising forming a first electrode over the plurality of LEDs. ### Claim 6 (depends on 5) The method of claim 5, wherein the one of the plurality of LEDs determined to be defective is not covered by the first electrode. ### Claim 7 (depends on 6) The method of claim 6, further comprising providing at least one of a color filter and a wavelength conversion layer over the first electrode layer. ### Claim 8 (depends on 1) The method of claim 1, wherein: in providing the TFT substrate, the one of sub-pixel locations has a corresponding reflective structure; and in transferring the plurality of LEDs from the carrier substrate to the TFT substrate, the at least two of the plurality of LEDs are disposed over the corresponding reflective structure at the one of the plurality of sub-pixel locations. ### Claim 9 (depends on 8) The method of claim 8, wherein: in providing the TFT substrate, an insulating layer is provided; after the fixing positions of the plurality of LEDs, the plurality of LEDs exhibit a maximum elevation with respect to the TFT substrate; and a top surface of the insulating layer is positioned to be lower than the maximum elevation. ### Claim 10 (depends on 9) The method of claim 9, wherein: the insulating layer is provided at a thickness (t) extending between a bottom surface of the insulating layer and a top surface of the insulating layer; and a distance (d) between the top surface of the insulating layer and the maximum elevation is between approximately 3% of the thickness and approximately 70% of the thickness. ### Claim 11 A method for manufacturing a display device comprising: providing a thin film transistor (TFT) substrate having a plurality of sub-pixel locations and a plurality of TFTs; providing a carrier substrate supporting a plurality of light emitting diodes (LEDs), wherein each of the plurality of LEDs has a first electrical contact and a second electrical contact; transferring the plurality of LEDs from the carrier substrate to the TFT substrate, with a corresponding one of the plurality of LEDs being disposed at each of the plurality of sub-pixel locations; fixing positions of the plurality of LEDs with respect to the TFT substrate; providing a filling insulator contacting sidewalls of the plurality of LEDs; determining that a first LED of the plurality of LEDs is defective; and electrically isolating the first electrical contact of the first LED determined to be defective, wherein electrically isolating the first electrical contact comprises laser cutting a first electrode of the display device. ### Claim 12 (depends on 11) The method of claim 11, wherein the first electrode of the display device is not disposed over the first LED determined to be defective. ### Claim 13 (depends on 11) The method of claim 11, wherein, in transferring the plurality of LEDs, at least two of the plurality of LEDs are disposed at each of the plurality of sub-pixel locations. ### Claim 14 (depends on 11) The method of claim 11, wherein: in providing the TFT substrate, an insulating layer is provided; after the fixing positions of the plurality of LEDs, the plurality of LEDs exhibit a maximum elevation with respect to the TFT substrate; and a top surface of the insulating layer is positioned to be lower than the maximum elevation. ### Claim 15 (depends on 14) The method of claim 14, wherein: the insulating layer is provided at a thickness (t) extending between a bottom surface of the insulating layer and a top surface of the insulating layer; and a distance (d) between the top surface of the insulating layer and the maximum elevation is between approximately 3% of the thickness and approximately 70% of the thickness.