# US 10,121,695 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,695 B2 - Document ID: US10121695B2 - Status: Granted - Kind: B2 - Application number: 15/852,479 - Filed: 2017-12-22 - Published: 2018-08-02 - Granted: 2018-11-06 - Earliest claimed: 2017-01-30 - Assignees: Shinko Electric Industries Co., Ltd. - Applicants: Shinko Electric Industries Co., Ltd. - Inventors: Tadashi Arai; Yoshikazu Hirabayashi; Hidetoshi Arai; Tadashi Kodaira - Web page: https://patentgrep.com/patent/US10121695B2 ## CPC - H10W 20/075: {of multilayered thin functional dielectric layers} - H05K 1/18: structurally associated with non-printed electric components (H05K1/16 takes precedence) - H05K 3/28: Applying non-metallic protective coatings {(H05K3/0091 takes precedence; methods for intermediate insulating layers for build-up multilayer circuits H05K3/4673)} - H05K 3/34: by soldering - H10W 20/063: {by forming conductive members before forming protective insulating material} - H10W 20/42: Vias, e.g. via plugs - H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 70/685: comprising multiple insulating layers - H10W 72/012: {of bump connectors, dummy bumps or thermal bumps} - H10W 74/012: {of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills} - H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills - H10W 72/072: {of bump connectors} - H10W 72/073: {of die-attach connectors} - H10W 72/07338: {hardening the adhesive by curing, e.g. thermosetting} - H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core} - H10W 72/225: {Bumps having a filler embedded in a matrix} - H10W 72/241: {Dispositions, e.g. layouts} - H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu} - H10W 72/253: {not comprising solid metals or solid metalloids, e.g. polymers or ceramics} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ## Abstract A semiconductor device includes a wiring substrate, a semiconductor chip, conductive paste, and an adhesive layer. The wiring substrate includes an insulating layer and a wiring layer on a surface of the insulating layer. The semiconductor chip includes a circuit-formation surface in which an electrode pad is provided, and is mounted on the wiring substrate with the circuit-formation surface facing toward the wiring layer. The conductive paste electrically connects the wiring layer and the electrode pad. The adhesive layer is over the entirety of the surface of the insulating layer, and covers the wiring layer and the conductive paste. The adhesive layer fills in a gap between the surface of the insulating layer and the circuit-formation surface, to bond the wiring substrate and the semiconductor chip. The adhesive layer extends onto a side surface of the semiconductor chip to form a fillet. ## Claims ### Claim 1 A semiconductor device comprising: a wiring substrate including an insulating layer; and a wiring layer on a surface of the insulating layer; a semiconductor chip including a circuit-formation surface in which an electrode pad is provided, the semiconductor chip being mounted on the wiring substrate with the circuit-formation surface facing toward the wiring layer; a conductive paste electrically connecting the wiring layer and the electrode pad; and an adhesive layer covering an entirety of the surface of the insulating layer with a single adhesive layer, the adhesive layer covering the wiring layer and the conductive paste, the adhesive layer filling in a gap between the surface of the insulating layer and the circuit-formation surface, to bond the wiring substrate and the semiconductor chip, the adhesive layer extending onto a side surface of the semiconductor chip to form a fillet. ### Claim 2 (depends on 1) The semiconductor device as claimed in claim 1, further comprising: a protruding electrode formed directly on the wiring layer, the protruding electrode having an end face connected to the electrode pad via the conductive paste. ### Claim 3 (depends on 2) The semiconductor device as claimed in claim 2, wherein the conductive paste extends from the end face of the protruding electrode onto a side surface of the protruding electrode. ### Claim 4 (depends on 3) The semiconductor device as claimed in claim 3, wherein the conductive paste covers an entirety of the side surface of the protruding electrode. ### Claim 5 (depends on 2) The semiconductor device as claimed in claim 2, wherein the adhesive layer covers a side surface of the protruding electrode and a side surface of the conductive paste. ### Claim 6 (depends on 1) The semiconductor device as claimed in claim 1, further comprising: a protruding electrode formed directly on the electrode pad, the protruding electrode having an end face connected to the wiring layer via the conductive paste. ### Claim 7 (depends on 6) The semiconductor device as claimed in claim 6, wherein the adhesive layer includes a first adhesive layer over the entirety of the surface of the insulating layer, with a gap being formed between the first adhesive layer and the circuit-formation surface; and a second adhesive layer filling in the gap, the second adhesive layer extending onto the side surface of the semiconductor chip to form the fillet. ### Claim 8 (depends on 6) The semiconductor device as claimed in claim 6, wherein the conductive paste extends from the end face of the protruding electrode onto a side surface of the protruding electrode. ### Claim 9 (depends on 8) The semiconductor device as claimed in claim 8, wherein the conductive paste covers an entirety of the side surface of the protruding electrode. ### Claim 10 (depends on 6) The semiconductor device as claimed in claim 6, wherein the adhesive layer covers a side surface of the protruding electrode and a side surface of the conductive paste. ### Claim 11 (depends on 1) The semiconductor device as claimed in claim 1, wherein the conductive paste includes a resin and a metal powder dispersed in the resin. ### Claim 12 (depends on 1) The semiconductor device as claimed in claim 1, wherein the adhesive layer is formed of a same material. ### Claim 13 (depends on 1) The semiconductor device as claimed in claim 1, wherein the adhesive layer is absent on a part of the side surface of the semiconductor chip so that the part of the side surface of the semiconductor chip is exposed outside the adhesive layer.