# US 10,121,690 B2 · Method of manufacturing a semiconductor component and semiconductor component

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- Number: US 10,121,690 B2
- Document ID: US10121690B2
- Status: Granted
- Kind: B2
- Application number: 14/757,589
- Filed: 2015-12-23
- Published: 2016-06-23
- Granted: 2018-11-06
- Earliest claimed: 2014-12-23
- Assignees: Infineon Technologies AG
- Applicants: Infineon Technologies AG
- Inventors: Georg Meyer-Berg; Edward Fuergut; Joachim Mahler
- Web page: https://patentgrep.com/patent/US10121690B2

## CPC

- H10P 72/74: {using temporarily an auxiliary support}
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 72/0198: {batch processes}
- H10P 72/7416: {used during dicing or grinding}
- H10P 72/7422: {used to protect an active side of a device or wafer}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- H10W 72/9413: {on encapsulations}
- H10W 72/944: {Dispositions of multiple bond pads}
- H10W 74/014: {using batch processing}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Various embodiments provide method of manufacturing a semiconductor component, wherein the method comprises providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side, wherein the thinned wafer is placed on a first side of the carrier; forming an encapsulation encapsulating the layer stack at least partially; and subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier.

## Claims

### Claim 1

A method of manufacturing a semiconductor component, the method comprising:
providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side,
wherein the thinned wafer is placed on a first side of the carrier;
forming an encapsulation encapsulating the layer stack at least partially; and
subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier;
wherein the method further comprises:
dicing the layer stack before forming the encapsulation.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the subsequent thinning of the carrier is performed to such an extent that a second side of the thinned wafer is exposed,
wherein the second side is opposite to the one side.

### Claim 3 (depends on 2)

The method according to claim 2, further comprising
forming a further metallization layer on the second side of the thinned wafer.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the carrier comprises at least one material selected out of the group consisting of:
glass;
silicon;
ceramic; and
carbon.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the providing of the layer stack comprises placing the thinned wafer on the first side of the carrier.

### Claim 6 (depends on 5)

The method according to claim 5, wherein an adhesion layer is formed between the thinned wafer and the carrier.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the subsequent thinning is performed by an etching process.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the providing of the layer stack comprises placing a thick wafer on the first side of the carrier and thinning the thick wafer to form the thinned wafer of the layer stack.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the thinning of the thick wafer is performed after the thick wafer is placed on the first side of the carrier and before the forming of the encapsulation.

### Claim 10 (depends on 1)

A reconstituted wafer manufactured by a method according to claim 1.

### Claim 11

A method of manufacturing a semiconductor component, the method comprising:
providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side,
wherein the thinned wafer is placed on a first side of the carrier;
forming an encapsulation encapsulating the layer stack at least partially; and
subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier,
wherein the layer stack comprises an adhesive layer arranged between the thinned wafer and the carrier, and
wherein the adhesive layer is used as a stop layer in the subsequently thinning.

### Claim 12 (depends on 11)

The method according to claim 11, wherein the adhesive layer is removed after the subsequent thinning.

### Claim 13

A method of manufacturing a semiconductor component, the method comprising:
providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side,
wherein the thinned wafer is placed on a first side of the carrier;
forming an encapsulation encapsulating the layer stack at least partially; and
subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier;
wherein the method further comprises:
placing a further carrier on the side of the metallization layer before forming the stacked layer.

### Claim 14 (depends on 13)

The method according to claim 13, wherein the further carrier is placed on the wafer before the wafer is thinned.