# US 10,121,680 B2 · Substrate processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,680 B2 - Document ID: US10121680B2 - Status: Granted - Kind: B2 - Application number: 15/831,811 - Filed: 2017-12-05 - Published: 2018-06-14 - Granted: 2018-11-06 - Earliest claimed: 2016-12-09 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Munehito Kagaya; Ayuta Suzuki; Kosuke Yamamoto; Tsuyoshi Moriya; Kazuyoshi Matsuzaki - Web page: https://patentgrep.com/patent/US10121680B2 ## CPC - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - C23C 16/45508: {Radial flow} - C23C 16/45542: {Plasma being used non-continuously during the ALD reactions} - C23C 16/45544: {characterized by the apparatus} - C23C 16/45565: {Shower nozzles} - H10P 72/00: Handling or holding of wafers, substrates or devices during manufacture or treatment thereof - C23C 16/45525: {Atomic layer deposition [ALD]} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane} - H10P 14/6687: {the compound comprising silicon and nitrogen} - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. The gas supply part includes a central region and one or more outer peripheral regions surrounding the central region. The gas supply holes and the introduction ports are provided for each of the central region and the outer peripheral regions. The processing gas whose gas supply conditions are adjusted for each of the regions is continuously and outwardly supplied in a circumferential direction around the center axis from the introduction ports. ## Claims ### Claim 1 A substrate processing apparatus in which a mounting table configured to mount a substrate and a gas supply part configured to supply a processing gas for processing the substrate are provided in a processing container so as to face each other, and the processing gas introduced from introduction ports formed in an end portion of the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table, wherein the gas supply part includes a central region facing a central portion of the substrate and one or more outer peripheral regions surrounding the central region and having an annular shape around a center axis of the gas supply part in a plan view, the gas supply holes and the introduction ports are provided for each of the central region and the outer peripheral regions, the introduction ports corresponding to the outer peripheral regions are formed in an annular shape around the center axis in a plan view, and the processing gas whose gas supply conditions are adjusted for each of the regions is continuously and outwardly supplied in a circumferential direction around the center axis from the introduction ports corresponding to the outer peripheral regions to the gas supply holes corresponding to the outer peripheral regions. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein the gas supply part includes gas supply paths configured to supply the processing gas from the introduction ports corresponding to the outer peripheral regions to the gas supply holes corresponding to the outer peripheral regions, and the gas supply paths are formed in an annular shape around the center axis in a plan view. ### Claim 3 (depends on 2) The apparatus of claim 2, wherein the gas supply paths include a supply path formed in an annular cylinder shape around the center axis and a supply path formed in an annular plate shape around the center axis. ### Claim 4 (depends on 1) The apparatus of claim 1, wherein the gas supply part includes diffusion spaces provided in the central region and the outer peripheral regions, the diffusion spaces configured to diffuse a gas in a direction perpendicular to the center axis and communicating with the gas supply holes corresponding to the central region and the outer peripheral regions, and the diffusion spaces corresponding to the outer peripheral regions are formed in an annular shape around the center axis in a plan view. ### Claim 5 (depends on 1) The apparatus of claim 1, wherein the gas supply part includes a connecting pipe configured to connect the introduction ports corresponding to the central region and the outer peripheral regions and an external gas supply pipe, the connecting pipe is formed by concentrically arranging a plurality of pipes having different diameters around the center axis, and the gas introduction ports corresponding to the outer peripheral regions communicate with a gas supply space formed by an outer wall of an inner one of two adjacent pipes and an inner wall of an outer one of the two adjacent pipes.