# US 10,121,662 B2 · Methods of forming structures and methods of decreasing defect density

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- Number: US 10,121,662 B2
- Document ID: US10121662B2
- Status: Granted
- Kind: B2
- Application number: 15/889,598
- Filed: 2018-02-06
- Published: 2018-08-30
- Granted: 2018-11-06
- Earliest claimed: 2014-01-09
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Gurtej S. Sandhu
- Web page: https://patentgrep.com/patent/US10121662B2

## CPC

- H10P 76/20: of masks comprising organic materials
- B81C 1/00031: {Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002)}
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10P 50/692: {characterised by their composition, e.g. multilayer masks or materials}
- H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
- H10P 76/405: {characterised by their composition, e.g. multilayer masks}
- H10P 76/4083: {characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks}
- H10P 76/4085: {characterised by the processes involved to create the masks}
- H10P 76/4088: {Processes for improving the resolution of the masks}
- H10W 20/041: {the barrier, adhesion or liner layers being discontinuous}
- B81C 2201/0149: Forming nanoscale microstructures using auto-arranging or self-assembling material
- H10W 20/0554: {of nanotubes or nanowires}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of forming a structure comprises forming a pattern of self-assembled nucleic acids over a material. The pattern of self-assembled nucleic acids is exposed to at least one repair enzyme to repair defects in the pattern. The repaired pattern of self-assembled nucleic acids is transferred to the material to form features therein. A method of decreasing defect density in self-assembled nucleic acids is also disclosed. Self-assembled nucleic acids exhibiting an initial defect density are formed over at least a portion of a material and the self-assembled nucleic acids are exposed to at least one repair enzyme to repair defects in the self-assembled nucleic acids. Additional methods are also disclosed.

## Claims

### Claim 1

A method of forming a structure, comprising:
forming a pattern of self-assembled nucleic acids over a material;
exposing the pattern of self-assembled nucleic acids to at least one repair enzyme to repair defects in the pattern of self-assembled nucleic acids; and
transferring the repaired pattern of self-assembled nucleic acids to the material to form features therein.

### Claim 2 (depends on 1)

The method of claim 1, wherein forming a pattern of self-assembled nucleic acids over a material comprises forming a pattern of self-assembled deoxyribonucleic acids or a pattern of self-assembled ribonucleic acids over the material.

### Claim 3 (depends on 1)

The method of claim 1, wherein forming a pattern of self-assembled nucleic acids over a material comprises forming the pattern of self-assembled nucleic acids over a carbon material.

### Claim 4 (depends on 1)

The method of claim 1, wherein forming a pattern of self-assembled nucleic acids over a material comprises covalently bonding the self-assembled nucleic acids to the material.

### Claim 5 (depends on 1)

The method of claim 1, wherein forming a pattern of self-assembled nucleic acids over a material comprises ionically bonding the self-assembled nucleic acids to the material.

### Claim 6 (depends on 1)

The method of claim 1, wherein transferring the repaired pattern of self-assembled nucleic acids to the material to form features therein comprises forming the features comprising at least one dimension of less than about 40 nm.

### Claim 7

A method of forming a structure, comprising:
forming a mask of self-assembled nucleic acids over a material;
contacting the mask of self-assembled nucleic acids with at least one repair enzyme to repair defects in the mask of self-assembled nucleic acids; and
removing the material exposed through the mask of self-assembled nucleic acids to form features therein.

### Claim 8 (depends on 7)

The method of claim 7, wherein forming features in the material comprises forming the features in the material comprising a lower defect level than in the mask of self-assembled nucleic acids.

### Claim 9 (depends on 7)

The method of claim 7, wherein forming features in the material comprises forming nanowires, gold nanoparticles, semiconductive quantum dots, or fluorescent quantum dots in the material.

### Claim 10 (depends on 7)

The method of claim 7, further comprising removing the mask of self-assembled nucleic acids.

### Claim 11

A method of forming a structure, comprising:
self-assembling nucleic acids on a material to form an initial self-assembled nucleic acid pattern;
contacting the initial self-assembled nucleic acid pattern with at least one repair enzyme to repair defects in the initial self-assembled nucleic acid pattern; and
transferring the repaired self-assembled nucleic acid pattern to the material.

### Claim 12 (depends on 11)

The method of claim 11, wherein self-assembling nucleic acids on a material to form an initial self-assembled nucleic acid pattern comprises forming the initial self-assembled nucleic acid pattern comprising multi-stranded oligonucleotide strands.

### Claim 13 (depends on 11)

The method of claim 11, wherein self-assembling nucleic acids on a material to form an initial self-assembled nucleic acid pattern comprises forming the initial self-assembled nucleic acid pattern comprising a single stranded polynucleotide folded and bonded into a scaffolded structure.

### Claim 14 (depends on 11)

The method of claim 11, wherein self-assembling nucleic acids on a material to form an initial self-assembled nucleic acid pattern comprises forming the initial self-assembled nucleic acid pattern comprising a single stranded polynucleotide.

### Claim 15 (depends on 11)

The method of claim 11, wherein contacting the initial self-assembled nucleic acid pattern with at least one repair enzyme comprises achieving a reduced defect density in the repaired self-assembled nucleic acid pattern.

### Claim 16 (depends on 15)

The method of claim 15, wherein transferring the repaired self-assembled nucleic acid pattern to the material comprises transferring the repaired self-assembled nucleic acid pattern to the material after achieving the reduced defect density.

### Claim 17

A method of decreasing defect density in self-assembled nucleic acids, the method comprising:
forming self-assembled nucleic acids over at least a portion of a material, the self-assembled nucleic acids exhibiting an initial defect density; and
exposing the self-assembled nucleic acids to at least one repair enzyme to repair defects in the self-assembled nucleic acids.

### Claim 18 (depends on 17)

The method of claim 17, wherein exposing the self-assembled nucleic acids to at least one repair enzyme to repair defects in the self-assembled nucleic acids comprises removing at least one base from the self-assembled nucleic acids.

### Claim 19 (depends on 17)

The method of claim 17, wherein exposing the self-assembled nucleic acids to at least one repair enzyme to repair defects in the self-assembled nucleic acids comprises repairing at least one metal ion binding site in the self-assembled nucleic acids.

### Claim 20 (depends on 17)

The method of claim 17, further comprising repeating the exposing the self-assembled nucleic acids to at least one repair enzyme until a reduced defect density is achieved.