# US 10,121,653 B2 · Bottom-up PEALD proces

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,121,653 B2
- Document ID: US10121653B2
- Status: Granted
- Kind: B2
- Application number: 14/861,441
- Filed: 2015-09-22
- Published: 2016-01-14
- Granted: 2018-11-06
- Earliest claimed: 2013-02-08
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Lin-Jung Wu; Su-Horng Lin; Chi-Ming Yang
- Web page: https://patentgrep.com/patent/US10121653B2

## CPC

- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- C23C 16/45542: {Plasma being used non-continuously during the ALD reactions}
- H01J 37/321: {the radio frequency energy being inductively coupled to the plasma}
- H01J 37/3211: {Antennas, e.g. particular shapes of coils}
- H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream}
- H01J 37/32706: {Polarising the substrate}
- H01J 37/32926: {Software, data control or modelling}
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 72/76: using mechanical means, e.g. clamps or pinches
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to form a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

## Claims

### Claim 1

A method of performing a plasma enhanced atomic layer deposition (PEALD) process, comprising:
introducing a precursor gas into a processing chamber configured to house a semiconductor workpiece during a first time period;
ionizing the precursor gas during the first time period;
applying a bias voltage to a wafer chuck during the ionization of the precursor gas, wherein the bias voltage attracts the ionized precursor gas to the semiconductor workpiece so as to cause the ionized precursor gas to accumulate on the semiconductor workpiece;
introducing a reactant gas that is different than the precursor gas into the processing chamber at a second time period that occurs after the first time period and that does not overlap the first time period; and
igniting a plasma from the reactant gas during the second time period, wherein the plasma is configured to react with the ionized precursor gas that has accumulated on the semiconductor workpiece to form a deposited layer on the semiconductor workpiece.

### Claim 2 (depends on 1)

The method of claim 1,
wherein during the first time period the precursor gas in ionized using an RF power; and
wherein the RF power is reduced upon ending the introduction of the precursor gas into the processing chamber and increased upon introducing the reactant gas into the processing chamber.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
purging a residue of the reactant gas from the processing chamber after the first time period.

### Claim 4 (depends on 1)

The method of claim 1, wherein the second time period occurs after the ionization of the precursor gas has ceased.

### Claim 5 (depends on 1)

The method of claim 1, wherein the bias voltage is not applied to the wafer chuck during the second time period.

### Claim 6 (depends on 1)

The method of claim 1, wherein the deposited layer has a greater thickness on horizontally extending surfaces of the semiconductor workpiece than on vertically extending sidewalls of the semiconductor workpiece.

### Claim 7 (depends on 1)

The method of claim 1, wherein the bias voltage comprises a pulsed bias voltage that alternates between a first value and a second value during the first time period.

### Claim 8 (depends on 7)

The method of claim 7, wherein the pulsed bias voltage alternates between voltage values in a range of between approximately 0V and approximately −200V.

### Claim 9

A method of performing a PEALD process, comprising:
ionizing a precursor gas within a processing chamber configured to hold a substrate during a first time period;
applying a bias voltage to a wafer chuck during the ionization of the precursor gas, wherein the bias voltage attracts the precursor gas to accumulate on the substrate;
igniting a plasma within the processing chamber from a reactant gas during a second time period that occurs after the ionization of the precursor gas has ceased and that does not overlap the first time period; and
wherein the plasma reacts with the precursor gas that has accumulated on the substrate to form a deposited layer having a greater thickness on horizontally extending surfaces of the substrate than on vertically extending sidewalls of the substrate.

### Claim 10 (depends on 9)

The method of claim 9, further comprising:
purging a residue of the precursor gas from the processing chamber prior to introducing the reactant gas into the processing chamber; and
purging a residue of the reactant gas from the processing chamber after igniting the plasma.

### Claim 11 (depends on 9)

The method of claim 9, wherein the plasma comprises a direct plasma generated within the processing chamber.

### Claim 12 (depends on 9)

The method of claim 9, wherein the bias voltage is applied to a semiconductor workpiece concurrent to ionizing the precursor gas.

### Claim 13 (depends on 9)

The method of claim 9, wherein the bias voltage is not applied to the wafer chuck during the second time period.

### Claim 14 (depends on 9)

The method of claim 9, wherein the plasma comprises a direct plasma ignited within the processing chamber.

### Claim 15 (depends on 9)

The method of claim 9, wherein the second time period begins at an end of the first time period.

### Claim 16

A method of performing a PEALD process, comprising:
introducing a precursor gas into a processing chamber configured to house a semiconductor workpiece during a first time period;
applying an RF power to an RF antenna to ionize the precursor gas during the first time period, wherein the RF power is increased upon introducing the precursor gas into the processing chamber and decreased upon ending the introduction of the precursor gas into the processing chamber;
biasing a wafer chuck to attract the ionized precursor gas to the semiconductor workpiece during the ionization of the precursor gas; and
introducing a reactant gas into the processing chamber during a second time period that occurs after the ionization of the precursor gas has ceased and that does not overlap the first time period, wherein the reactant gas interacts with the ionized precursor gas to form a deposited layer on the semiconductor workpiece and the RF power is increased upon introducing the reactant gas into the processing chamber.

### Claim 17 (depends on 16)

The method of claim 16, further comprising:
purging a residue of the precursor gas from the processing chamber prior to introducing the reactant gas into the processing chamber.

### Claim 18 (depends on 16)

The method of claim 16, further comprising:
igniting a plasma from the reactant gas during the second time period.

### Claim 19 (depends on 18)

The method of claim 18, wherein the plasma comprises a direct plasma ignited within the processing chamber.

### Claim 20 (depends on 1)

The method of claim 1,
wherein a first RF power is applied to an RF antenna to ionize the precursor gas during the first time period; and
wherein the first RF power applied to the RF antenna is reduced upon ending the introduction of the precursor gas into the processing chamber.