# US 10,121,651 B2 · Method of manufacturing semiconductor device

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- Number: US 10,121,651 B2
- Document ID: US10121651B2
- Status: Granted
- Kind: B2
- Application number: 15/704,603
- Filed: 2017-09-14
- Published: 2018-06-28
- Granted: 2018-11-06
- Earliest claimed: 2016-12-28
- Assignees: Hitachi Kokusai Electric Inc.
- Applicants: Hitachi Kokusai Electric Inc.
- Inventors: Arito Ogawa; Shin Hiyama
- Web page: https://patentgrep.com/patent/US10121651B2

## CPC

- H10P 14/6905: {being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H}
- C23C 16/325: {Silicon carbide}
- C23C 16/345: {Silicon nitride}
- C23C 16/36: Carbonitrides
- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream}
- H01J 37/3244: {Gas supply means}
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H01J 37/32834: {Exhausting}
- H10P 14/6518: {by introduction of substances into an already-existing insulating layer}
- H10P 14/6524: {the substance being nitrogen}
- H10P 14/6532: {by exposure to a plasma}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 32/20: Diffusion for doping of insulating layers
- H10P 72/1924: {characterised by atmosphere control}
- H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins}
- H10P 72/1921: {characterised by substrate supports}
- H10P 72/3411: {involving loading and unloading of wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing a semiconductor device according to the technique includes: (a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall; and (b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall;
(b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space; and
(c) supplying a nitrogen-containing gas into the processing space after performing (b).

### Claim 2 (depends on 1)

The method of claim 1, wherein a carbon content ratio of the etching-resistant film is higher than that of the insulating film.

### Claim 3 (depends on 2)

The method of claim 2, wherein (b) comprises:
(b-1) activating the carbon-containing gas into plasma state; and (b-2) supplying a carbon component of the carbon-containing gas in plasma state to the surface of the insulating film.

### Claim 4 (depends on 3)

The method of claim 3, wherein the carbon-containing gas is activated into plasma state in the processing space.

### Claim 5 (depends on 3)

The method of claim 3, wherein the etching-resistant film formed in (b) is thinner than the insulating film.

### Claim 6 (depends on 2)

The method of claim 2, wherein the etching-resistant film formed in (b) is thinner than the insulating film.

### Claim 7 (depends on 1)

The method of claim 1, wherein (b) comprises:
(b-1) activating the carbon-containing gas into plasma state; and (b-2) supplying a carbon component of the carbon-containing gas in plasma state to the surface of the insulating film.

### Claim 8 (depends on 7)

The method of claim 7, wherein the carbon-containing gas is activated into plasma state in the processing space.

### Claim 9 (depends on 8)

The method of claim 8, wherein the etching-resistant film formed in (b) is thinner than the insulating film.

### Claim 10 (depends on 7)

The method of claim 7, wherein the etching-resistant film formed in (b) is thinner than the insulating film.

### Claim 11 (depends on 1)

The method of claim 1, wherein the etching-resistant film formed in (b) is thinner than the insulating film.