# US 10,121,650 B1 · Method of manufacturing semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,121,650 B1
- Document ID: US10121650B1
- Status: Granted
- Kind: B1
- Application number: 15/940,618
- Filed: 2018-03-29
- Granted: 2018-11-06
- Earliest claimed: 2018-02-07
- Assignees: Hitachi Kokusai Electric Inc.
- Applicants: Hitachi Kokusai Electric Inc.
- Inventors: Tsukasa Kamakura
- Web page: https://patentgrep.com/patent/US10121650B1

## CPC

- H10P 14/00: Formation of materials, e.g. in the shape of layers or pillars
- C23C 16/402: {Silicon dioxide}
- C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C 16/45502: {Flow conditions in reaction chamber}
- C23C 16/45519: {Inert gas curtains}
- C23C 16/45521: {the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery}
- C23C 16/45523: {Pulsed gas flow or change of composition over time}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45557: {Pulsed pressure or control pressure}
- C23C 16/45561: {Gas plumbing upstream of the reaction chamber}
- C23C 16/4583: {the substrate being supported substantially horizontally}
- H01J 37/32816: {Pressure}
- H01J 37/32834: {Exhausting}
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/35: with cell select transistors, e.g. NAND
- H10D 64/037: {comprising charge-trapping insulators}
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P 14/432: {using selective deposition}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins}
- H10P 72/7626: {characterised by the construction of the shaft}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10P 72/33: {into and out of processing chamber}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A technique capable of forming a film at the bottom of a deep hole having a high aspect ratio. A method of manufacturing a semiconductor device, including: (a) loading a substrate having a hole into a transfer space via a substrate loading/unloading port; (b) moving the substrate to a processing space; (c) forming a precursor in the hole by simultaneously supplying a first process gas to the substrate in the processing space and an inert gas into the transfer space with the processing space spatially connected to the transfer space and maintaining a difference between a first inner pressure of the processing space and a first inner pressure of the transfer space within a predetermined range; and (d) forming a thin film in the hole after performing (b).

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate having a hole into a transfer space via a substrate loading/unloading port;
(b) moving the substrate to a processing space;
(c) forming a precursor in the hole by simultaneously supplying a first process gas to the substrate in the processing space and an inert gas into the transfer space with the processing space spatially connected to the transfer space and maintaining a difference between a first inner pressure of the processing space and a first inner pressure of the transfer space within a predetermined range; and
(d) forming a thin film in the hole after performing (b) by modifying the precursor by supplying a second process gas to the substrate in the processing space and the inert gas into the transfer space with the processing space spatially connected to the transfer space and maintaining a difference between a second inner pressure of the processing space and a second inner pressure of the transfer space within a predetermined range, wherein the second inner pressure of the processing space is higher than the first inner pressure of the processing space.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first inner pressure of the processing space is lower than a pressure whereat a decomposed first process gas recombines.

### Claim 3 (depends on 2)

The method of claim 2, wherein the first inner pressure of the transfer space is equal to or higher than the first inner pressure of the processing space.

### Claim 4 (depends on 3)

The method of claim 3, wherein the second inner pressure of the transfer space is equal to or higher than the second inner pressure of the processing space.

### Claim 5 (depends on 4)

The method of claim 4, wherein the first process gas is easily decomposed.

### Claim 6 (depends on 3)

The method of claim 3, wherein the first process gas is easily decomposed.

### Claim 7 (depends on 2)

The method of claim 2, wherein the second inner pressure of the transfer space is equal to or higher than the second inner pressure of the processing space.

### Claim 8 (depends on 7)

The method of claim 7, wherein the first process gas is easily decomposed.

### Claim 9 (depends on 2)

The method of claim 2, wherein the first process gas is easily decomposed.

### Claim 10 (depends on 1)

The method of claim 1, wherein the first inner pressure of the transfer space is equal to or higher than the first inner pressure of the processing space.

### Claim 11 (depends on 10)

The method of claim 10, wherein the second inner pressure of the transfer space is equal to or higher than the second inner pressure of the processing space.

### Claim 12 (depends on 11)

The method of claim 11, wherein the first process gas is easily decomposed.

### Claim 13 (depends on 10)

The method of claim 10, wherein the first process gas is easily decomposed.

### Claim 14 (depends on 1)

The method of claim 1, wherein the second inner pressure of the transfer space is equal to or higher than the second inner pressure of the processing space.

### Claim 15 (depends on 14)

The method of claim 14, wherein the first process gas is easily decomposed.

### Claim 16 (depends on 1)

The method of claim 1, wherein the first process gas is easily decomposed.