# US 10,121,647 B2 · Method for removing adhering matter and dry etching method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,121,647 B2 - Document ID: US10121647B2 - Status: Granted - Kind: B2 - Application number: 15/456,759 - Filed: 2017-03-13 - Published: 2017-07-13 - Granted: 2018-11-06 - Earliest claimed: 2014-09-24 - Assignees: Central Glass Company, Limited - Applicants: Central Glass Company, Limited - Inventors: Akiou Kikuchi; Masanori Watari; Kenji Kameda; Shin Hiyama; Yasutoshi Tsubota - Web page: https://patentgrep.com/patent/US10121647B2 ## CPC - H01L 21/02076 - B08B 5/00: Cleaning by methods involving the use of air flow or gas flow (cleaning hollow articles by methods or apparatus specially adapted thereto B08B9/00) - B08B 9/00: Cleaning hollow articles by methods or apparatus specially adapted thereto - H01L 21/02046 - H01L 21/02049 - H01L 21/3065 - H01L 21/30604 - H01L 21/31116 - H01L 21/32135 - H01L 21/67017 - H01L 21/67069 - H01L 31/18 - H01L - B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL ## Abstract An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. ## Claims ### Claim 1 An attached substance removing method of removing an attached substance containing an iodine oxide attached to a surface of a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas in a plasma free state. ### Claim 2 (depends on 1) The attached substance removing method according to claim 1, wherein the cleaning gas is put into contact with the attached substance in a temperature range of 20° C. or higher and 300° C. or lower and in a pressure range of 66 Pa or higher and 101 kPa or lower. ### Claim 3 (depends on 2) The attached substance removing method according to claim 2, wherein: the fluorine-containing gas contained in the cleaning gas is ClF3; and the temperature range is 25° C. or higher and 200° C. or lower. ### Claim 4 (depends on 2) The attached substance removing method according to claim 2, wherein: the fluorine-containing gas contained in the cleaning gas is F2; and the temperature range is 120° C. or higher and 200° C. or lower. ### Claim 5 (depends on 2) The attached substance removing method according to claim 2, wherein: the fluorine-containing gas contained in the cleaning gas is IF7; and the temperature range is 230° C. or higher and 300° C. or lower. ### Claim 6 (depends on 1) The attached substance removing method according to claim 1, wherein the fluorine-containing gas contained in the cleaning gas contains at least one type of fluorine (F) selected from the group consisting of HF, F2, XFn (X represents any one of Cl, Br and I; and n represents an integer of 1 or greater and 7 or less). ### Claim 7 (depends on 1) The attached substance removing method according to claim 1, wherein the iodine oxide contained in the attached substance is represented by chemical formula IxOyFz (x represents an integer of 1 or 2, y represents an integer of 1 or greater and 5 or less, and z represents an integer of 0 or 1). ### Claim 8 (depends on 7) The attached substance removing method according to claim 7, wherein the iodine oxide is I2O5. ### Claim 9 A dry etching method, comprising the steps of: supplying an etching gas containing an iodine-containing gas into a chamber and performing etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a surface of a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas in a plasma free state. ### Claim 10 (depends on 9) The dry etching method according to claim 9, wherein the cleaning gas is put into contact with the attached substance in a temperature range of 20° C. or higher and 300° C. or lower and in a pressure range of 66 Pa or higher and 101 kPa or lower. ### Claim 11 (depends on 10) The dry etching method according to claim 10, wherein the fluorine-containing gas contained in the cleaning gas is ClF3. ### Claim 12 (depends on 9) The dry etching method according to claim 9, wherein the fluorine-containing gas contained in the cleaning gas contains at least one type of fluorine (F) selected from the group consisting of HF, F2, XFn (X represents any one of Cl, Br and I; and n represents an integer of 1 or greater and 7 or less). ### Claim 13 (depends on 9) The dry etching method according to claim 9, wherein the iodine oxide contained in the attached substance is represented by chemical formula IxOyFz (x represents an integer of 1 or 2, y represents an integer of 1 or greater and 5 or less, and z represents an integer of 0 or 1). ### Claim 14 An attached substance removing method of removing an attached substance containing an iodine compound attached to a surface of a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas not containing iodine in a plasma free state. ### Claim 15 (depends on 14) The attached substance removing method according to claim 14, wherein the fluorine-containing gas contained in the cleaning gas is F2 or ClF3. ### Claim 16 (depends on 14) The attached substance removing method according to claim 14, wherein the iodine compound is IF5. ### Claim 17 A dry etching method, comprising: an etching step of removing a film on a substrate with an etching gas containing an iodine-containing gas; and a post-process step of removing an iodine compound generated in the etching step; wherein in the post-process step, a post-process gas containing a fluorine-containing gas not containing iodine is supplied to a surface of the substrate in a plasma free state to remove the iodine compound. ### Claim 18 (depends on 17) The dry etching method according to claim 17, further comprising a heating step of, after the post-process step, heating the substrate to remove the iodine compound deposited on the surface of the substrate. ### Claim 19 (depends on 17) The dry etching method according to claim 17, wherein the fluorine-containing gas contained in the post-process gas is F2 or ClF3. ### Claim 20 An attached substance removing method of removing an attached substance containing an iodine oxide attached to a surface of a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing IF7. ### Claim 21 (depends on 20) The attached substance removing method according to claim 20, wherein the cleaning gas is put into contact with the attached substance in a temperature range of 230° C. or higher and 300° C. or lower and in a pressure range of 66 Pa or higher and 101 kPa or lower.