# US 10,121,592 B2 · Dielectric thin film and electronic component

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- Number: US 10,121,592 B2
- Document ID: US10121592B2
- Status: Granted
- Kind: B2
- Application number: 15/459,609
- Filed: 2017-03-15
- Published: 2017-09-28
- Granted: 2018-11-06
- Earliest claimed: 2016-03-22
- Assignees: TDK Corporation
- Applicants: TDK Corporation
- Inventors: Maiko Shirokawa; Raitarou Masaoka; Hiroki Uchiyama; Shohei Fujii
- Web page: https://patentgrep.com/patent/US10121592B2

## CPC

- H01G 4/10: Metal-oxide dielectrics {(H01G4/085 takes precedence)}
- C04B 35/053: Fine ceramics
- C04B 35/6261: {Milling}
- C04B 35/62675: {characterised by the treatment temperature}
- C04B 35/62695: {Granulation or pelletising (devices for shaping artificial aggregates from ceramic mixtures B28B1/004)}
- C04B 35/638: Removal thereof
- C23C 14/082: {of alkaline earth metals}
- H01G 4/1209: {characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence)}
- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- H01P 7/10: Dielectric resonators
- H03H 1/00: Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network (constructional details of electromechanical transducers H03H9/00)
- C04B 2235/604: Pressing at temperatures other than sintering temperatures
- C04B 2235/6562: Heating rate
- C04B 2235/6567: Treatment time
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- H01B 3/12: ceramics
- H01G 4/12: Ceramic dielectrics {(H01G4/085 takes precedence)}
- H03H 2001/0021: {Constructional details}
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01P: WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})

## Abstract

A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as CA and the area occupied by the columnar structure B is set as CB, the relationship between CA and CB satisfies 0.4≤CB/CA≤1.1.

## Claims

### Claim 1

A dielectric thin film comprising MgO as a main component, wherein
the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and
in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as CA and the area occupied by the columnar structure B is set as CB, the relationship between CA and CB satisfies 0.4≤CB/CA≤1.1.

### Claim 2 (depends on 1)

The dielectric thin film according to claim 1, wherein
at least two columnar structures B are present, and the columnar structure B is a columnar structure including at least one columnar structure B+ with one or more triple junctions, and
the columnar structure B+ is included in an amount of 50% or more of the area CB occupied by the columnar structure B.

### Claim 3 (depends on 1)

An electronic component comprising the dielectric thin film according to claim 1.

### Claim 4 (depends on 2)

An electronic component comprising the dielectric thin film according to claim 2.