# US 10,121,575 B2 · Thin film resistor

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- Number: US 10,121,575 B2
- Document ID: US10121575B2
- Status: Granted
- Kind: B2
- Application number: 15/346,567
- Filed: 2016-11-08
- Published: 2018-02-08
- Granted: 2018-11-06
- Earliest claimed: 2016-08-03
- Assignees: National Pingtung University of Science and Technology
- Applicants: National Pingtung University of Science & Technology
- Inventors: Ying-Chieh Lee
- Web page: https://patentgrep.com/patent/US10121575B2

## CPC

- H01C 7/006: {Thin film resistors}
- C22C 19/05: with chromium
- H01C 7/06: including means to minimise changes in resistance with changes in temperature
- H01C 17/075: by thin-film techniques
- H01C 17/12: by sputtering
- H01C: RESISTORS
- C22C: ALLOYS (treatment of alloys C21D, C22F)

## Abstract

A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin film resistor.

## Claims

### Claim 1

A thin film resistor comprising 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of at least one of lanthanide elements.

### Claim 2 (depends on 1)

The thin film resistor as claimed in claim 1, wherein the thin film resistor comprises 40.4-58.5 at.% of nickel, 12.5-21.6 at.% of chromium, 5.2-7.8 at.% of manganese, 6.1-15.5 at.% of yttrium, and 3.7-33.1 at.% of at least one of the lanthanide elements.

### Claim 3 (depends on 2)

The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 58.5 at.% of nickel, 21.6 at.% of chromium, 7.5 at.% of manganese, 8.7 at.% of yttrium, and 3.7 at.% of dysprosium.

### Claim 4 (depends on 2)

The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 44.6 at.% of nickel, 16.2 at.% of chromium, 5.2 at.% of manganese, 15.5 at.% of yttrium, and 18.5 at.% of dysprosium.

### Claim 5 (depends on 2)

The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 42.9 at.% of nickel, 15.2 at.% of chromium, 6.2 at.% of manganese, 9.5 at.% of yttrium, and 26.2 at.% of dysprosium.

### Claim 6 (depends on 2)

The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 41.0 at.% of nickel, 14.3 at.% of chromium, 5.5 at.% of manganese, 6.1 at.% of yttrium, and 33.1 at.% of dysprosium.

### Claim 7 (depends on 2)

The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 54.8 at.% of nickel, 19.4 at.% of chromium, 7.8 at.% of manganese, 12.9 at.% of yttrium, and 5.1 at.% of terbium.

### Claim 8 (depends on 2)

The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 46.6 at.% of nickel, 16.9 at.% of chromium, 8.3 at.% of manganese, 10.1 at.% of yttrium, and 18.1 at.% of terbium.

### Claim 9 (depends on 2)

The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 42.9 at.% of nickel, 15.1 at.% of chromium, 6.1 at.% of manganese, 10.8 at.% of yttrium, and 25.1 at.% of terbium.

### Claim 10 (depends on 2)

The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 40.4 at.% of nickel, 12.5 at.% of chromium, 5.4 at.% of manganese, 9.2 at.% of yttrium, and 32.5 at.% of terbium.